Preparation of Functionalized Semiconductor Thin Film by Laser-Induced Surface Reaction

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TiO_2 thin films were deposited by pulsed beam chemical vapor deposition from titanium tetraisopropoxide and H_2O vapors. Each reactant gas was introduced to a chamber alternately using commercial automobile electric fuel injectors as a beam souece. These thin films, deposited at various substrate temperatures, were characterized by optical absorption spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. Their properties were compared with those of TiO_2 films deposited by electron beam evaporation.Al doped and Al-In co-doped ZnS thin film electrodes were grown by electron-beam evaporation on ITO (indium-tin oxide) glass substrate, and their photoelectrochemical properties were investigated. These thin films were also characterized by optical absorption, X-ray diffraction (XRD) and X-ray photoelectron spectrum (XPS) measurements. The doping of the ZnS film with Al alone did not result in a satisfactory n-type semiconductor. For Al-In co-doped ZnS thin films prepared by the thermal diffusion of a thin In layr which was deposited previously on the ITO-glass substrate, however, the barrier resistance between ITO and ZnS was lowered, and a clear n-type semiconductor characteristic was observed. The efficiencies of both the photocurrent and photocorrosion of ZnS in an aqueous electrolyte were increased with higher Al concentration.