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Preparation of Functionalized Semiconductor Thin Film by Laser-Induced Surface Reaction

激光诱导表面反应制备功能化半导体薄膜

基本信息

批准号：
04555192
负责人：
HASHIMOTO Kazuhito
金额：
$ 6.72万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04555192/
关键词：
photo CVD II-VI semiconductor thin film surface reaction laser light fine pattern 超格子膜

项目摘要

TiO_2 thin films were deposited by pulsed beam chemical vapor deposition from titanium tetraisopropoxide and H_2O vapors. Each reactant gas was introduced to a chamber alternately using commercial automobile electric fuel injectors as a beam souece. These thin films, deposited at various substrate temperatures, were characterized by optical absorption spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. Their properties were compared with those of TiO_2 films deposited by electron beam evaporation.Al doped and Al-In co-doped ZnS thin film electrodes were grown by electron-beam evaporation on ITO (indium-tin oxide) glass substrate, and their photoelectrochemical properties were investigated. These thin films were also characterized by optical absorption, X-ray diffraction (XRD) and X-ray photoelectron spectrum (XPS) measurements. The doping of the ZnS film with Al alone did not result in a satisfactory n-type semiconductor. For Al-In co-doped ZnS thin films prepared by the thermal diffusion of a thin In layr which was deposited previously on the ITO-glass substrate, however, the barrier resistance between ITO and ZnS was lowered, and a clear n-type semiconductor characteristic was observed. The efficiencies of both the photocurrent and photocorrosion of ZnS in an aqueous electrolyte were increased with higher Al concentration.

以四异丙醇钛和水蒸气为原料，采用脉冲束化学气相沉积法制备了TiO_2薄膜。每种反应气体交替地引入到使用商用汽车电动燃料喷射器作为束源的室中。这些薄膜，在不同的衬底温度下沉积，其特征在于通过光学吸收光谱，X射线衍射和X射线光电子能谱。用电子束蒸发法在ITO（Indium-tin Oxide）玻璃衬底上制备了Al掺杂和Al-In共掺杂ZnS薄膜电极，并研究了其光电化学性能。通过光吸收、X射线衍射（XRD）和X射线光电子能谱（XPS）等测试手段对薄膜进行了表征。单独用Al掺杂ZnS薄膜并不能产生令人满意的n型半导体。而在ITO玻璃衬底上沉积一层In薄膜，通过热扩散法制备的Al-In共掺杂ZnS薄膜，ITO与ZnS之间的势垒电阻降低，具有明显的n型半导体特性。随着Al浓度的增加，ZnS在水溶液中的光电流效率和光腐蚀效率均增加。