Semi-automatic vacuum waferprober system

半自动真空晶圆探针系统

• 批准号: 525293842
• 金额: --
• 依托单位: Rheinisch-Westfälische Technische Hochschule Aachen
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2023
• 资助国家: 德国
• 起止时间: 2022-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/525293842?language=en
• 关键词: Semi; automatic; vacuum; waferprober; system

Nanoelectronic devices based on novel two-dimensional (2D) materials are increasingly fabricated with scalable manufacturing methods on wafer scale. The Chair of Electronic Devices (ELD) is actively researching 2D materials, which are integrated into devices with scalable processes over large areas up to 200 mm wafer size. Optimizing the growth and integration process of these 2D materials requires that devices and test structures can be characterized quickly and reliably over the entire wafer area. Characterization in vacuum is also important, since damage-free deposition of passivation layers is currently still difficult and the passivation often also influences the material and device properties. Therefore, we need a semi-automated vacuum wafer prober system for electrical characterization of unencapsulated 2D material devices, where adsorbates can be effectively removed by vacuum annealing up to 300 °C without oxidizing the 2D materials. This requires a high vacuum of <10e4 mbar (better in the 10e5 mbar range). Characterization of unencapsulated devices also allows growth and integration processes to be verified as quickly as possible with a number of minimal process steps, as each process step increases the risk of process-induced variability, damage, or contamination. Thus, time-efficient loops between growth/integration and characterization can be created to effectively and successively improve material and device parameters. The results are then immediately statistically meaningful by a semi-automatic measurement, in particular to analyze spatial variation on the wafer surface. We plan to equip the vacuum wafer prober with measuring devices for direct current (DC), high frequency (HF), capacitance (CV) and pulse measurements, so that the requirements of various types of devices are met, such as (high frequency) transistors, memristive devices or sensors for which we have various ongoing and planned projects. Many of these projects also aim at a large area realization (up to 200 mm wafer) e.g. in form of arrays of devices. Especially the memristive devices, which are to be fabricated in large scale arrays, are very much influenced in their switching behavior by the ambient atmosphere and a measurement under vacuum allows a reliable characterization under humidity free conditions, similar to the final application. At the RWTH Aachen site, there is currently no semi-automatic wafer prober that also offers this so important vacuum function (+ coupling with bakeout function up to 300 °C) and additionally has the possibility to perform measurements at DC, RF, CV or with pulses.

基于新型二维（2D）材料的纳米电子器件越来越多地利用晶片级的可扩展制造方法来制造。电子器件主席（ELD）正在积极研究2D材料，这些材料可以集成到具有可扩展工艺的器件中，大面积可达200 mm晶圆尺寸。优化这些2D材料的生长和集成过程需要在整个晶圆区域上快速可靠地表征器件和测试结构。真空中的表征也很重要，因为钝化层的无损伤沉积目前仍然很困难，并且钝化通常也会影响材料和器件特性。因此，我们需要一种半自动真空晶圆探测器系统来对未封装的2D材料器件进行电气表征，其中吸附物可以通过高达300 °C的真空退火来有效去除，而不会氧化2D材料。这需要<10 e4 mbar的高真空（最好在10 e5 mbar范围内）。未封装器件的表征还允许以最少的工艺步骤尽快验证生长和集成工艺，因为每个工艺步骤都会增加工艺引起的变异性、损坏或污染的风险。因此，可以创建生长/集成和表征之间的时间有效循环，以有效地和连续地改善材料和器件参数。然后，通过半自动测量，结果立即具有统计意义，特别是分析晶片表面上的空间变化。我们计划为真空晶圆探测器配备直流（DC）、高频（HF）、电容（CV）和脉冲测量的测量设备，以便满足各种类型设备的要求，例如（高频）晶体管、忆阻器件或传感器，我们正在进行和计划进行各种项目。这些项目中的许多项目还旨在例如以器件阵列的形式实现大面积（高达200 mm晶片）。特别是要以大规模阵列制造的忆阻器件，其开关行为受到环境气氛的很大影响，并且真空下的测量允许在无湿度条件下的可靠表征，类似于最终应用。在RWTH亚琛工厂，目前还没有半自动晶圆探测器能够提供如此重要的真空功能（+与高达300 °C的烘烤功能相结合），并且还可以在DC、RF、CV或脉冲下进行测量。