Semi-automatic vacuum waferprober system

基于新型二维（2D）材料的纳米电子器件越来越多地采用可扩展的晶圆级制造方法制造。电子器件主席（ELD）正在积极研究2D材料，这些材料集成到具有可扩展工艺的设备中，其面积可达200毫米晶圆尺寸。优化这些二维材料的生长和集成过程需要在整个晶圆区域内快速可靠地表征器件和测试结构。在真空中表征也很重要，因为钝化层的无损伤沉积目前仍然很困难，而且钝化通常也会影响材料和器件的性能。因此，我们需要一个半自动的真空晶圆探针系统来表征非封装的二维材料器件的电特性，其中吸附物可以通过高达300°C的真空退火有效地去除，而不会氧化二维材料。这需要<10e4毫巴的高真空（最好在10e5毫巴范围内）。对未封装器件的表征也允许通过一些最小的工艺步骤尽可能快地验证生长和集成工艺，因为每个工艺步骤都会增加工艺引起的变异性、损坏或污染的风险。因此，生长/集成和表征之间的时间效率循环可以创建有效和连续改进材料和器件参数。然后，通过半自动测量，特别是分析晶圆表面的空间变化，结果立即具有统计意义。我们计划为真空晶圆探头配备直流（DC），高频（HF），电容（CV）和脉冲测量装置，以满足各种类型器件的要求，例如（高频）晶体管，忆阻器件或传感器，我们有各种正在进行和计划的项目。这些项目中的许多还以大面积实现（高达200毫米晶圆）为目标，例如以设备阵列的形式。特别是要在大规模阵列中制造的记忆器件，其开关行为受环境气氛的影响很大，真空下的测量可以在无湿度条件下进行可靠的表征，类似于最终应用。在亚琛工业大学现场，目前还没有半自动晶圆探头提供如此重要的真空功能（+与高达300°C的烘烤功能耦合），并且还可以在DC， RF， CV或脉冲下进行测量。

Nanoelectronic devices based on novel two-dimensional (2D) materials are increasingly fabricated with scalable manufacturing methods on wafer scale. The Chair of Electronic Devices (ELD) is actively researching 2D materials, which are integrated into devices with scalable processes over large areas up to 200 mm wafer size. Optimizing the growth and integration process of these 2D materials requires that devices and test structures can be characterized quickly and reliably over the entire wafer area. Characterization in vacuum is also important, since damage-free deposition of passivation layers is currently still difficult and the passivation often also influences the material and device properties. Therefore, we need a semi-automated vacuum wafer prober system for electrical characterization of unencapsulated 2D material devices, where adsorbates can be effectively removed by vacuum annealing up to 300 °C without oxidizing the 2D materials. This requires a high vacuum of <10e4 mbar (better in the 10e5 mbar range). Characterization of unencapsulated devices also allows growth and integration processes to be verified as quickly as possible with a number of minimal process steps, as each process step increases the risk of process-induced variability, damage, or contamination. Thus, time-efficient loops between growth/integration and characterization can be created to effectively and successively improve material and device parameters. The results are then immediately statistically meaningful by a semi-automatic measurement, in particular to analyze spatial variation on the wafer surface. We plan to equip the vacuum wafer prober with measuring devices for direct current (DC), high frequency (HF), capacitance (CV) and pulse measurements, so that the requirements of various types of devices are met, such as (high frequency) transistors, memristive devices or sensors for which we have various ongoing and planned projects. Many of these projects also aim at a large area realization (up to 200 mm wafer) e.g. in form of arrays of devices. Especially the memristive devices, which are to be fabricated in large scale arrays, are very much influenced in their switching behavior by the ambient atmosphere and a measurement under vacuum allows a reliable characterization under humidity free conditions, similar to the final application. At the RWTH Aachen site, there is currently no semi-automatic wafer prober that also offers this so important vacuum function (+ coupling with bakeout function up to 300 °C) and additionally has the possibility to perform measurements at DC, RF, CV or with pulses.