IC neuro chip with analog synapses for a correct reaction neural network
IC neuro chip with analog synapses for a correct reaction neural network
批准号:
05555105
负责人:
SAWADA Yasuji
金额:
$12.61万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
我们制作了一个具有脉冲表示的神经电路的微芯片。神经元输出是电压脉冲序列。突触是一个恒流源,其输出与神经元输出的占空比成比例。通过RC电路收集突触电流来对膜电位充电,提供类似于生物神经系统的模拟操作。我们采用4位SRAM作为突触权值的存储器,并研制了一种新型的浮栅模拟存储器(Switched Diffusion Analog Memory),它是集成神经网络中存储突触权值的关键器件。该模拟存储器包括隧道结、连接TFT、两个电容器和MOSFET,通过使用多晶硅氧化物膜作为隧道势垒实现的小电容与TFT的开关一起改善了线性度。最后,我们设计并制作了一种基于SDAM的模拟DBM(DeterministicBoltzmannMachinelearning)芯片,采用Hebbian规则设计的DBM学习电路适用于基于SDAM的集成模拟神经元芯片,可以同时工作于学习模式和检索模式。
英文摘要
We have fabricated a microchip of a neural circuit with pulse representation. The neuron output is a voltage pulse train. The synapse is a constant current source whose output is proportional to the duty ratio of neuron output. Membrane potential is charged by collection of synaptic currents through a RC circuit, providing an analog operation similar to the biological neural systems. We use a 4-bit SRAM as the memory for synaptic weights.Then, we have fabricated a new type of analog memory (Switched Diffusion Analog Memory) with a floating gate witch is used as a key component to store synaptic weights for integrated artificial neural networks. The analog memory comprises a tunnel junction, a connection TFT,two capacitors, and a MOSFET.A small capacitance realized by use of poly-Si oxide film as the tunneling barrier together with the switching of the TFT improves linearity. The experimental result agrees with the theoretical estimation.The last, we designed and fabricated a new analog DBM (Deterministic Boltzmann Machine learning) chip using SDAM.DBM learning circuit designed by Hebbian rule is suitable for integrated analog neuro-chip by use of SDAM which can be operated simultaneously for learning mode and retrieving mode.
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Y. Mizugaki: "Linearization analysis of threshold characteristics for some applications of mutually coupled SQUIDs" IECE Trans. Electron.E76-C. 1291-1297 (1993)
Y. Mizugaki:“互耦合 SQUID 某些应用的阈值特性的线性化分析”IECE Trans。
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Y.Mizugaki: "New Approach Implementation of Neural Circuits Using Superconductive Devices" Extended Abstracts of the 1994 Int.Conf.on SSDM. 364-366 (1994)
Y.Mizugaki:“使用超导器件实现神经电路的新方法”1994 年 Int.Conf.on SSDM 的扩展摘要。
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Y.Mizugaki: "Implementation of superconducting synapse into a neuro-based analog-to-digital converter" Appl.Phys.Lett.65. 1712-1713 (1994)
Y.Mizugaki:“将超导突触实现到基于神经的模数转换器”Appl.Phys.Lett.65。
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Y. Mizugaki: "Superconducting implementation of neural networks using fluxon pulses" IEEE Trans. on Applied Superconductivity. 3. 2765-2768 (1993)
Y. Mizugaki:“使用磁通量脉冲超导实现神经网络”IEEE Trans。
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K.Nakajima: "Hardware Implementation of New Analog Memory for Neural Networks" IEICE Trans.ELECTRON.E78-C. 101-105 (1995)
K.Nakajima:“神经网络新型模拟存储器的硬件实现”IEICE Trans.ELECTRON.E78-C。
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Study of the maintenance mechanism of individuality by random cellular motion and its regulation
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批准号:08409002
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$18.62万
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财政年份:1996
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负责人:SAWADA Yasuji
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依托单位:
The Study on IC implementation of dynamic memory using Linear Switched Diffusion Analog Memory
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批准号:07555122
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$6.34万
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财政年份:1995
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负责人:SAWADA Yasuji
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依托单位:
LSI Implementation of Correct Reaction Neural Network with Variable Synap ses
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批准号:03555069
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$10.62万
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财政年份:1991
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负责人:SAWADA Yasuji
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依托单位:
STATISTICAL MECHANICS OF LIVING STATE
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批准号:03402008
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$6.53万
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财政年份:1991
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负责人:SAWADA Yasuji
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依托单位:
Research Fabrication of Integrated Neural Computing Circuits
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批准号:63850065
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$10.69万
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财政年份:1988
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负责人:SAWADA Yasuji
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依托单位:
Direct observation system for sub-pico second waveform in time and space
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批准号:61850066
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$4.54万
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财政年份:1986
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负责人:SAWADA Yasuji
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依托单位:
海外基金