MECHANISMS OF EPITAXY AND PROPERTIES OF COHERENT THIN FILMS

1)REM研究揭示了Au吸附在邻近的Si(111)表面引起的连续的结构相变和吸附原子密度。2)上述工作的扩展发现在[110]面上的刻面研究发现了不同的小平面及其粗化相变和它们的覆盖度关系。3)对Au吸附的邻近(001)表面进行了SPA-LEED和REM研究，揭示了小面形成的动力学。4)我们发现吸附原子在Si(111)表面上的有效电荷可以通过Au5)Roo&lt；21&Gt；的吸附由正变为负。在Si(111)Roo&lt；3&gt；x Roo&lt；3&gt；Ag上沉积少量的Ag、Au和Au，在Si(111)Roo&lt；3&gt；3&gt；Ag表面观察到驻波。8)在淬火的清洁的Si(111)表面上的吸附原子在230ﾟ℃左右具有可逆的结构相变，在C2x8和无序的1x1结构之间。9)C60分子在金属吸附的Si表面上表现出外延关系，这取决于金属诱导的超晶格。10)用SPA-LEED系统地研究了不同吸附系统下各种类型缺陷的形成和CaF_2的外延。11)从4K下对Ag/Si(111)体系的电导测量得到了2mnayr水平的金属-绝缘体相变。

1) REM study revealed successive Au adsorption induced structural phase transitions and adatom densities in the 1 x 1 pahse and facet formation on vicinal Si (111) surfaces.2) Extensoion of above work fo the studies of facetting on [110] zone found various facet planes and their roughening phase transitions and their coverage dependences.3) SPA-LEED and REM studies of Au adsorbed vicinal (001) surface were carried out as a cooperative research works and they revealed dynamics of facet formation4) We revealed that effective charge of adatom Si on Si (111) surface can be reversed from positive to negative by adosrption of Au5) ROO<21>x ROO<21> structures were commonly observed on Si (111) ROO<3>x ROO<3>Ag by deposition of small amounts of Ag, Au and Cu.6) Standing waves on semiconductor surfaces were firstly observed by STM in case of Si (111) ROO<3>x ROO<3>Ag at 4K.7) It was found that an incommensulate adsorbate structure formed by Pb adsroption on Si (111) transforms to 200K to a 7x ROO<3> structure.8) Adatoms on quenched clean Si (111) surfaces have a reversible structural phase transition at around 230ﾟC between the c2x8 and disordered 1x1 strcutures.9) C60 molecules showed epitaxial relations on metal adsorbed Si surfaces depending on the superlattices induced by metals.10) Systematic studies were carried out by SPA-LEED for studies of formation of various types of defects in cases of various adsorption systems and epitaxy of CaF_2 were studied.11) From a conductivity measurements at 4k for systems of Ag/Si (111) a metal-insulator transition at 2 mnolayr level was observed.