权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Characterization of the local layr structure in ferroelectricliquid crystals using synchrotron X-ray micro-diffraction

使用同步加速器 X 射线微衍射表征铁电液晶的局部层结构

基本信息

批准号：
07455016
负责人：
IIDA Atsuo
金额：
$ 3.07万
依托单位：
INSTITUTE OF MATERIALS STRUCTURE SCIENCE
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

The local layr structure of the broad and narrow wall of a zig-zag defect in a thin-surface stabilized ferroelectric liquid crystal cell was characterized using a synchrotron X-ray microbeam ofless than 5 mum and 1mum spatial resolution. A high precision goniometer using an air bearing system was used. Since the width of the narrow wall is a few mum, the newlydeveloped high precision and high spatial resolution system was quite effective. By using a rocking curve measurement at the narrow wall, the direction of the layr normal depends on the position in the wall and the layr bends in both the w and c direction contrary to the previous plane layr model. The bent layr structure is realized due to the restriction of the constant layr spacing.The local layr structure response to the low electric field was measured at and around the broad wall. Multiple or broad peaks appeared in the rocking curveat the broad wall change into a single and sharp peak when the electricfield is applied to the cell. These observation suggests that the pseudo-bookshelf structure at the broad wall becomes the bookshelf structure with the higher layr perfection owing to the field induced torque on the layrs. The frequency dependence of the rockingcurve profileindicates the relaxation time of the local layr response to the electricfields. It was also observed that the layr imperfection in the S_C phase and S_A phase were related each other. It is concluded that the present method is quite effective to characterize the local layr structure of smectic liquid crystals.

使用小于5μm和1μm空间分辨率的同步加速器X射线微束对薄表面稳定铁电液晶盒中之字形缺陷的宽壁和窄壁的局部层结构进行了表征。使用了采用空气轴承系统的高精度测角仪。由于窄壁的宽度只有几微米，新开发的高精度和高空间分辨率系统非常有效。通过在窄壁上使用摇摆曲线测量，层法线的方向取决于壁中的位置，并且与之前的平面层模型相反，层在 w 和 c 方向上弯曲。由于恒定层间距的限制，实现了弯曲层结构。在宽壁处和周围测量了局部层结构对低电场的响应。当向电池施加电场时，宽壁处的摇摆曲线中出现的多个或宽峰变成单个且尖锐的峰。这些观察结果表明，由于层上的场感应扭矩，宽壁处的伪书架结构成为具有较高层完善性的书架结构。摇摆曲线轮廓的频率依赖性表明局部层对电场响应的弛豫时间。还观察到S_C相和S_A相中的层缺陷彼此相关。结论是该方法对于表征近晶液晶的局部层结构非常有效。