Characterization of new ultra-hardness material-carbon nitride and rhombohedral boron nitride syntesized using electron cycrotron resonance plasma
电子回旋共振等离子体合成新型超硬度材料氮化碳和菱方氮化硼的表征
基本信息
- 批准号:07455429
- 负责人:
- 金额:$ 0.51万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1995
- 资助国家:日本
- 起止时间:1995 至 1997
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In this study. carbon nitride films and boron nitride films werr produced and characteized to investigate new function of these films. Raman scattering analysis reveals that the amorphous carbon nitride films deposited using an electron cycrotron resonancc (ECR) plasma enhanced chemical vapor deposition (CVD) apparatus had dianond-like carbon (DLC) structure as a fundamental structure. The relative nitrogen fraction [N] / ([N]+[C]) of the resulting films were 0.08 as a macimum value at every experimental conditions. IR spectra analysis reveals that nitrtogen atoms were substituted for carbon atoms or terminated carbon dangling bonds. Nitrogen containing carbon films deposited using an ion beam sputtering method or a magnetron sputtering method had DLC structure as the fundamental structure. The relative nitrogen fraction [N] / ([N] + [C]) of the resulting films were restricted to valus of 0.08. These results strongly suggest that the nirogen composition in the resulting films were rest … More ricted with fundamental structure of the felms and independent upon synthetic process. Theoretical composition of nirtogen calculated using the random covalent network theory was good agreement with experimental resuits. Therefore nitrogen composition in nitrogen-containing carbon films were found to be restricted to structrual factor.An indentation creep test has been performed to investigate the namo-structure changing of nitrogen-containing carbon films. It was found that viscous flow of the nitrogen-containing carbon films were promoted as compared with the films without nitrogen. Furthermore the critical force of the viscous flow beginning was decreased with the presence of the -C=N bond. This nano-indentation creep technique was found to be the effective technique in evaluation of nano-structure changing of the films.We have also produced boron nitride films using an r.f.plasma CVD method from BCl_3 and N_2 gas. Resulting films were found to be boron-rich composition. B-N bonds were found to form sp^2 bond from IR spectra. Hardness of the resulting films determined by an ultralow-load micro-hardness indenter were about 20GPa. The strain rate sensitivity exponent (m-value) detemined by an indentation creep test was 0.005-0.008. This value was found to be similar to DLC or glass. Less
在这项研究中。我们制备了氮化碳薄膜和氮化硼薄膜,并对其进行了表征,以研究这些薄膜的新功能。拉曼散射分析表明,用电子回旋共振(ECR)等离子体增强化学气相沉积(CVD)装置沉积的非晶态氮化碳薄膜以类二氢碳(DLC)结构为基本结构。在所有实验条件下,所得薄膜的相对氮分数[N]/([N]+[C])的最大值为0.08。红外光谱分析表明,氮原子取代了碳原子或终止了碳悬挂键。用离子束溅射法或磁控溅射法沉积的含氮碳膜以类金刚石结构为基本结构。所得薄膜的相对氮分数[N]/([N]+[C])被限制在0.08的值内。这些结果有力地表明,所得到的薄膜中的氮成分是静止的…更多地与毛毯的基本结构有关,与合成过程无关。用随机共价网络理论计算的Nirtogen的理论组成与实验结果吻合较好。因此,含氮碳膜的氮组分受结构因素的限制。通过压痕蠕变实验研究了含氮碳膜的纳米结构变化。结果表明,与不含氮的碳膜相比,含氮碳膜的粘性流动明显增强。此外,粘性流动开始的临界力随着-C=N键的存在而降低。这种纳米压痕蠕变技术是评价薄膜纳米结构变化的有效技术。我们还用射频等离子体CVD方法从BCl3和N_2气体中制备了氮化硼薄膜。结果表明,生成的薄膜是富硼的组成。红外光谱表明,B-N键形成了sp^2键。用超低载荷显微硬度计测得薄膜的硬度约为20 Gpa。由压痕蠕变试验确定的应变速率敏感指数(m值)为0.005-0.008。该值被发现与DLC或GRAPES相似。较少
项目成果
期刊论文数量(4)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Daisuke TANAKA: "Indentation Creep of Nitrogen-Containing Carbon Films" Japanese Jouranal of Applied Physics. 35. L1452-L1454 (1996)
Daisuke TANAKA:“含氮碳膜的压痕蠕变”日本应用物理学杂志。
- DOI:
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- 影响因子:0
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- 通讯作者:
Daisuke TANAKA: "Indentation Creep of Nitrogen-Containing Carbon Films" Japanese Journal of Applied Physics. 35. L1452-L1454 (1996)
Daisuke TANAKA:“含氮碳膜的压痕蠕变”日本应用物理学杂志。
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