Development of twin-tip STM and application to surface science
Development of twin-tip STM and application to surface science
批准号:
07504004
负责人:
TANISHIRO Yasumasa
金额:
$23.55万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1997
中文摘要
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英文摘要
Twin-tip STM has been manufactured by way of trial to apply it into surface science for example, measurement of electric conductivity of surfaces, observation of wide area of surfaces, study on surface electromigration and fabrication and characterization of nanostructures on surfaces. Atomic resolution images of the Si(111)7x7 reconstructed surface have been obtained using either of scanning tips. The instrument has two retractable electrodes in addition to the two scanning tips so that the rlectric conductivity is measured by using four(six)-probe method. The electrodes can be used for applying the sample bias to a thin film insulated from the substrate for the STM observation of the sulface. It has been found that the sample valtage under the tip can be measured through the voltage of the tip under the STM imaging condition (sample bias of 2V and tunneling current of 1nA). thus, the electric conductivity of the sample can be measured without mechanical contact between the sample and … More the tip, the damage of the sample surface and the tip being avoided. Since probe current can be fed into the sample through the tip, electric property of Schottky contact beyween the tip and the sample can be studied under the well-defined condition.The electric conductivity of the bulk part of semicoductor samples becomes much larger at high temperatures, where many sulface phase transition occurs and good quality adsorbate-induced structures and crystalline films grow. Semiconductor thin films insulated from the substrate are needed to measure the change of the surface electric conductivity due to the surface phase transitions and structure changes. Thus, epitaxial growth method of silicon thin crystal film which is insulated from the Si(111) substrate by calcium fluoride (CaF_2) film has been developed. Metal adsorption induced facetting of vicinal silicon surfaces has been also studied. Anisotropic surfaces formed there will be good subject of the twin-tip STM study, becouse those are expected to show interesting relation between the atomic structures and the electronic properties. Less
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M.Chida: "Reversible Phase Transition Between Metastable Structures of Si (111) c2x8 and "1x1"Studied by High Temperature STM" Surface Sci.(to be published). (1998)
M.Chida:“高温 STM 研究的 Si (111) c2x8 和“1x1”亚稳态结构之间的可逆相变”表面科学(待出版)。
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作者:
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通讯作者:
C.Collazo-Davila: "Atomic Structure of the In on Si(III)4_x1 Surface" Surface Rev.Lett.4・1. 65-70 (1997)
C.Collazo-Davila:“Si(III)4_x1 表面上 In 的原子结构”Surface Rev.Lett.4・1 (1997)。
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通讯作者:
H.Tamura: "Studeies of Surface Stress by TEM and REM" in Proc. ICSS-9, Surface Sci. in Press.
H.Tamura:“通过 TEM 和 REM 进行的表面应力研究”,Proc。
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T.Suzuki: "REM Study of High Index Si (5 5 12) Flat Surfaces" Surface Sci.348. 335-343 (1996)
T.Suzuki:“高折射率 Si (5 5 12) 平面的 REM 研究”Surface Sci.348。
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T.Shimakura: "In situ Study of Gold-induced Surface Structures and Step Re-arrangements of Si(001) Surface by High-Temperature STM." Surface Sci. Lett.(to be published). (1998)
T.Shimakura:“通过高温 STM 对金诱导的表面结构和 Si(001) 表面的阶梯重排进行原位研究。”
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共 25 条
Growth of Silicon Thin Film on Si (111)-CaF_2 for the Measurement of Surface Electronic Properties
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批准号:06650038
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.47万
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财政年份:1994
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负责人:TANISHIRO Yasumasa
-
依托单位:
国内基金
海外基金
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