Development of Low-Temperature Processes for High-Temperature Intermetallic Compounds and their microstructure control

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(1) DIP COATING OF Nb BY USING Al-Si LIQUIDBy dipping of Nb in Si-saturated Al liquid at temperatures from 940 K to 1140 K,C40-type Nb(Si_<0.9>, Al_<0.1>)_2 layr formed at the interface on Nb. The intermetallic layr consisted of fine particles with submicrons in diameter and included Al-Si liquid between particles. The growth of Nb(Si, Al)_2 layr was rate-controlled by the dissolution-precipitation reaction at the Nb/Nb(Si, Al)_2 interface. The growth rate of Nb(Si, Al)_2 was 3 times faster than that of Mo(Si, Al)_2 in the Mo dipping.In the dipping of Nb in non-saturated Al-Si liquid at 1025 K,C40-type Nb(Si, Al)_2 formed with Al-23 mol% Si liquid. The growth rate was faster than that in the case of the saturated Al-Si liquid. Product layr by dipping Nb in Al-Si liquid with around 20 mol% Si exhibited the layr-by-layr structure consisting of C40-type Nb(Si, Al)_2 and D0_<22>-type Nb(Al, Si)_3. With decreasing Si content down to 5 mol% in Al-Si liquid, the product layr consisted of the … More D0_<22>-type Nb(Al, Si)_3. Their results imply that C54-type Nb(Si, Al)_2 does not exist in the Nb-Si-Al system at 1025 K.(2) MECHANISM OF DIP COATING USING Al-Si LIQUID :By dipping Mo in Si-saturated Al liquid, C40-type Mo(Si, Al)_2 layr formed on Mo. The C40-type intermetallic layr was comprised of needle-like Mo(Si, Al)_2 grains with Al-Si liquid at grain boundary. The needle-like grains grow by dissolution-precipitation process through Al-Si liquid at the interface between Mo(Si, Al)_2 and Mo.The mechanism of the growth of C40-type intermetallic layr is the dissolution-precipitation process through Al-Si liquid at the interface between Mo or Nb and the product layr. The difference of grain shape on Mo(Si, Al)_2 and Nb(Si, Al)_2 is discussed with the phase relation and supply and consumption of Al and Si from the liquid phase in the interface. The formation of the layr-by-layr structure in the Nb dipping was explained by the consumption of Al and Si with different ratios for D0_<22> and C40.(3) DEVELOPMENT OF CRACK=FREE COATING BY DIPPING USING Al-Si LIQUIDAddition of Cr, Nb, Ta and Ti in Al-Si liquid was carried out in order to prevent the formation of cracks of Mo(Si, Al)_2 layr on Mo surface with large curvature. The dipping of MO into Al-Si-Cr liquid leads to the formation of the crack-free layr. In the dipping with Al-Si-Cr liquid, (Cr, Mo) (Si, Al)_2 grains formed on the Mo(Si, Al)_2 layr. There is no change ofthe chemical composition and the growth rate of Mo(Si, Al)_2 by addition of Cr in Al-Si liquid.(4) LIQUID-PHASE REACTIVE SINTERING OF Mo-Si-Al POWDER MIXTURELiquid-phase reactive sintering of Mo-Si-Al powdr mixture were investigated. In the powder mixture with high Al content, self-propagation reaction occurred and Mo(Si, Al)_2 formed. The sintered bodies have porous structure. Less