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PREPARATION OF PHOTOLUMINESCENT NANOSIZED Si BY PULSED LASER ABLATION

脉冲激光烧蚀制备光致发光纳米硅

基本信息

批准号：
07650008
负责人：
SHIMIZU Tatsuo
金额：
$ 1.47万
依托单位：
KANAZAWA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650008/
关键词：
PULSED LASER ABLATION NANOSIZED Si PHOTOLUMINESCENCE OXIDIZED Si MATRIX XPS RAMAN SCATTERING X-RAY DIFFRACTION X線回折液滴状粒子マグネトロンスパッタ

项目摘要

A variety of silicon-based films with nanosized crystallite inclusions have been prepared for visible photoemission using various techniques. Pulsed laser ablation has been attracting much attention for preparation of high-quality perovskite oxide films. The preparation technique has a quite unique feature that depositing particles have a broad distribution in size from mono- or diatomic species to huge clusters, so called droplets, with a micron size. In this study, for preparation of inhomogeneous oxide film with silicon crystallite inclusions in silicon oxide matrix, the pulsed laser ablation was employed.Silicon oxide films were prepared on fused quartz substrates at room temperature by pulsed laser ablation using silicon target and an ArF excimer laser with wavelength of 193 nm in a mixture of oxygen and helium gases. For depositing films the laser beam was focused into a small area resulting in 3.5 J/cm^2. After the deposition an ArF laser irradiation with 0.5 J/cm^2 was performed for enhancing photoluminescence. Photoluminescence, X-ray diffraction and Raman scattering measurements were performed. The photoluminescence measurement was carried out at room temperature using Ar- ion- laser excitation.As- deposited films obtained by pulsed laser ablation was found to be transparent silicon oxides including silicon crystallites with size as large as tens of nm. These large crystallites above nanosize were not expected to be photoluminescent centers. In fact, the as- deposited film shows a very weak photoluminescence. However, after the laser irradiation of 1000 shots the photoluminescence intensity was dramatically increased by two orders of magnitude. The photoluminscence spectrum was centered around 550 nm in wavelength. This dramatic enhancement can be attributed to a formation of nanosized silicon crystallites or a reduction of the defect density.

利用不同的技术制备了各种具有纳米微晶夹杂物的硅基薄膜，用于可见光电子发射。脉冲激光烧蚀技术是制备高质量钙钛矿氧化物薄膜的一种新方法。该制备技术具有相当独特的特征，即沉积颗粒具有从单原子或双原子物质到具有微米尺寸的巨大团簇（所谓的液滴）的广泛尺寸分布。为了在氧化硅基体中制备含硅微晶夹杂的非均匀氧化膜，采用脉冲激光烧蚀法，在室温下，用波长为193 nm的ArF准分子激光器和硅靶，在氧和氦的混合气体中，在熔融石英衬底上制备了氧化硅薄膜。为了沉积薄膜，激光束被聚焦到一个小的区域，得到3.5 J/cm ^2。沉积后，进行0.5 J/cm ^2的ArF激光照射以增强光致发光。进行了光致发光、X射线衍射和拉曼散射测量。在室温下用氩离子激光激发进行了光致发光测量，发现脉冲激光烧蚀沉积的薄膜是透明的氧化硅，其中含有尺寸达几十nm的硅微晶。这些纳米尺寸以上的大微晶预计不会成为光致发光中心。实际上，沉积态薄膜的光致发光很弱.然而，在1000次激光照射后，光致发光强度急剧增加了两个数量级。光致发光光谱的中心波长在550 nm左右。这种显著的增强可以归因于纳米尺寸的硅微晶的形成或缺陷密度的降低。