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Preperation of Cu-Chalcopyrite Semiconductor Thin Films by the Electrodeposition Method from Aqueous Solution

水溶液电沉积法制备铜黄铜矿半导体薄膜

基本信息

批准号：
07650381
负责人：
ENDO Saburo
金额：
$ 1.15万
依托单位：
Science University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

The ternary I-III-VI_2 chalcopyrite semiconductors have received considerable interest in their potential application to a variety of electrooptical devices. In particular, CuInSe_2 is very suitable for use as the optical absorption layr of solar cells, because it has a direct band gap of about 1.0 eV at room temprature and a high optical absorption coefficient. Therefore, these properties make CuInSe_2 a promising candidate for application in the area of photovoltaic devices. A high conversion efficiency of 17.7% has recently been achieved using CuInSe_2-based solar cells. Several preparation methods of CuInSe_2 thin filmes have been reported including co-evaporation, sputtering, molecular beam epitaxy, spray pyrolysis and electrodeposition. We adopted pulse-plated electrodeposition because it is low cost, requires simple instrumentation, has highly efficient material usage and can be used to produce large area cells. The use of a square pulse cathode potential results in high quality deposition with reduced hydrogen embrittlement. The electrolyte consisted of aqueous solution containing 2.0mM CuCl_2,2.5mM InCl_3 and 5.0mM SeO_2 adjusted to pH of 1.65 using HCl. The influence of the square pulse cathode potential on the film compositions, crytallinity and surface morphology has been studied. Homogeneous single phase CuInSe_2 films with smooth surface obtainded at a pulse potential of -0.8 V vs the saturated calomel electrode (SCE), a duty cycle of 33%, and annealing treatment.

I-III-VI_2三元黄铜矿半导体因其在各种电光器件中的潜在应用而受到人们的极大兴趣。特别是CuInSe_2，由于其在室温下具有约1.0 eV的直接禁带宽度和较高的光吸收系数，非常适合用作太阳能电池的光吸收层。因此，CuInSe_2的这些性质使得CuInSe_2在光伏器件领域有很好的应用前景。最近使用的CuInSe_2基太阳能电池获得了17.7%的高转换效率。CuInSe_2薄膜的制备方法主要有共蒸发、溅射、分子束外延、喷雾热解和电沉积等。我们采用脉冲电沉积法，因为它成本低，需要简单的仪器，材料利用率高，可以用于生产大面积电池。使用正方形脉冲阴极电势可获得高质量的沉积，同时减少氢脆。电解液由含2.0 mM CuCl2、2.5 mM InCl3和5.0 mM SeO2的水溶液组成，用盐酸调节pH至1.65。研究了方波脉冲阴极电位对薄膜成分、结晶度和表面形貌的影响。与饱和甘汞电极相比，脉冲电压为-0.8V、占空比为33%的CuInSe_2薄膜均匀，表面光滑。