Synthesis of enriched silicon for long-lived donor quantum states

我们已经发现了一种方法，利用现成的离子注入工具，使硅高度浓缩在理想的自旋为零的同位素中。对于利用数百万具有革命性能力的植入原子的量子自旋建造未来的量子计算机设备来说，这种“半导体真空”是必不可少的。我们已经证明了在原型材料中植入长寿命的施主原子量子态，这是由于天然硅中背景自旋的耗尽而成为可能的，现在的目标是将浓缩推向更极端。我们将把这种极端材料集成到功能设备中，这些设备使用电子检测到的电子自旋共振来探测异常持久的量子态，并开辟一条通往大规模设备的近期途径。

We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the depletion of background spins in natural silicon and now aim to push the enrichment to greater extremes. We will integrate the extreme material into functional devices that use electrically detected electron spin resonance to probe exceptionally durable quantum states and open a near-term pathway to large-scale devices.