Synthesis of enriched silicon for long-lived donor quantum states

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We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the depletion of background spins in natural silicon and now aim to push the enrichment to greater extremes. We will integrate the extreme material into functional devices that use electrically detected electron spin resonance to probe exceptionally durable quantum states and open a near-term pathway to large-scale devices.