Secondary ion mass spectrometer

为了对固体进行高空间和深度分辨率的原子成分分析，特别是用于确定半导体中的杂质分布，应为马格德堡奥托-冯-格里克大学自然科学学院物理研究所购买一台已有30多年历史的二次离子质谱仪(SIMS)的替代品。该光谱仪将由半导体外延部门操作，该部门主要从事III-V化合物半导体中超纯单晶外延层的制造、研究和应用。目前的研究主题是激光辅助金属有机气相外延的半导体结构的局域生长、基于III族氮化物的垂直电力电子学和过渡金属氮化物的溅射外延。除了典型的约1 nm的深度分辨率外，更高的横向分辨率也是目标，特别是为了更好地了解局部生长和器件特性。此外，在用外延方法制造层结构以及光电子和电子器件的过程中，通常存在问题的表面污染的检测是有用的。物理研究所(材料物理、固体物理)和材料工程与连接技术研究所(金属材料)的合作小组参与了该仪器的使用。

For highly spatially and depth-resolved atomic composition analysis of solids and particularly for determination of dopant profiles in semiconductors a replacement for a more than 30 year old secondary ion mass spectrometer (SIMS) shall be purchased for the Institute of Physics at the Faculty of Natural Sciences at the Otto-von-Geuricke University Magdeburg. The spectrometer will be oprated by the department of Semiconductor Epitaxy which is intensily occupied with the fabrication, investigation and application of ultra-pure, single crystalline epitaxial layers out of the group of III-V compound semiconductors. Current topics of that research are local growth of semiconductor structures by laser-assisted metalorganic vapor phase epitaxy, vertical power electronics based on group-III nitrides and sputter epitaxy of transition metal nitrides. Besides a typical depth resolution of about 1nm a higher lateral resolution is also targeted, in particular for a better understanding of the local growth and of device properties. In addition, detection of surface contaminations is helpful which are typically problematic during fabrication of layer structures by epitaxy methods and of optoelectronic and electronic devices. Cooperating groups of the Institute of Physics (Material physics, Solid state physics) and of the Institute for Materials Engineering and Joining Technology (Metallic materials) particpate in the use of the instrument.