Development of Double-meatl Layr, Double Sided Silicon Strip Detector
Development of Double-meatl Layr, Double Sided Silicon Strip Detector
批准号:
09640363
负责人:
IWATA Yohsei
金额:
$2.11万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
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英文摘要
A double-metal layer, double sided silicon strip detector with high two dimensional resolution, high voltage tolerance and radiation hardness was developed in the last fiscal year. We continued the development for the practical use of the detector in high energy physics experiments. We built and tested a ladder which is the minimum unit of a working detector.Modern hadron colliders have very short beam crossing times of 25 ns to 100 ns or so which are comparable to a carrier drift time in a silicon detector. Detector signals should be read within the beam crossing times. The fast operation and the high charge collection efficiency of the double-metal layer, double sided silicon strip detector were studied by computer simulations taking radiation damage into account. The result was presented at the eighth European Symposium on Semiconductor Detectors, Schloss Elmau, Germany.The ladder was fabricated from the double-metal layer, double sided silicon strip detectors and front-end electronics. The ladder should be built with a mechanical accuracy comparable to the position resolution of the silicon detector. We developed precise fixtures for this purpose. We succeeded to operate the ladder. The ladder was fabricated and tested in cooperation with the SVX-II group, CDF, Fermilab, USA.
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Y.Iwata, T.Ohsugi et al.: "Optimal P-Stop Pattern for the N-side Strip Isolation of Silicon Microstrip Detectors" IEEETransaction on Nuclear Science.Vol.45, No.3. 303-309 (1998)
Y.Iwata、T.Ohsugi 等人:“硅微带探测器 N 侧带隔离的最佳 P 停止模式”IEEETransaction on Nuclear Science.Vol.45,No.3。
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通讯作者:
Y.Iwata: "Optimal P-Stop Pattern for the N-Side Strip Isolation of Silicon Microstrip Defectors" IEEE Transactions on Nuclear Science. Vol.45 No.3. 303-309 (1998)
Y.Iwata:“硅微带缺陷器 N 侧带隔离的最佳 P 停止模式”IEEE 核科学汇刊。
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Y.Unno, Y.Iwata, T.Ohsugi et al.: "Evaluation of P-stop Structuresin the N-side of N-on-N Silicon Strip Detector" IEEETransaction on Nuclear Science. Vol.45, No.3. 401-405 (1998)
Y.Unno、Y.Iwata、T.Ohsugi 等人:“N-on-N 硅条探测器 N 侧 P 停止结构的评估”IEEE Transaction on Nuclear Science。
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通讯作者:
Y.Iwata.: "Optimal P-Stop Pattern for the N-Side Strip Isolation of Silicon Microstrip Defectors" IEEE Transactions on Nuclear Science. Vol.45No.3. 303-309 (1998)
Y.Iwata.:“硅微带缺陷器 N 侧带隔离的最佳 P 停止模式”IEEE 核科学汇刊。
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通讯作者:
Y.Unno: "Beam Test of a Large Area n-on-n Silicon Strip Detector with Fast Binary Readout Electronics" IEEE Transactions on Nuclear Science. Vol.44 No.3. 736-742 (1997)
Y.Unno:“具有快速二进制读出电子器件的大面积 n-on-n 硅带探测器的光束测试”IEEE 核科学汇刊。
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共 7 条
Higgs search by means of τ vertex tagging
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批准号:12640278
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.11万
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财政年份:2000
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负责人:IWATA Yohsei
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依托单位:
Study of Radiation Damage of Silicon Mecrostrip Detectors
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批准号:07640412
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.47万
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财政年份:1995
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负责人:IWATA Yohsei
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依托单位:
海外基金