Development of Double-meatl Layr, Double Sided Silicon Strip Detector
Development of Double-meatl Layr, Double Sided Silicon Strip Detector
批准号:
09640363
负责人:
IWATA Yohsei
金额:
$2.11万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998
中文摘要
在上一个财政年度,开发了一种具有高二维分辨率、高电压耐受性和抗辐射性的双金属层双面硅条探测器。我们继续研制该探测器,以便在高能物理实验中实际使用。我们建造并测试了一个梯子,这是一个工作的探测器的最小单元。现代强子对撞机具有非常短的束流穿越时间为25 ns到100 ns左右,这与硅探测器中的载流子漂移时间相当。探测器信号应在光束交叉时间内读取。通过计算机模拟研究了双金属层双面硅条探测器的快速工作和高电荷收集效率。在德国的施洛斯埃尔毛举行的第八届欧洲半导体探测器研讨会上,研究人员介绍了这一成果。梯子的机械精度应与硅探测器的位置分辨率相当。我们为此开发了精确的夹具。我们成功地操作了梯子。梯子是与SVX-II组,CDF,费米实验室,美国合作制造和测试的。
英文摘要
A double-metal layer, double sided silicon strip detector with high two dimensional resolution, high voltage tolerance and radiation hardness was developed in the last fiscal year. We continued the development for the practical use of the detector in high energy physics experiments. We built and tested a ladder which is the minimum unit of a working detector.Modern hadron colliders have very short beam crossing times of 25 ns to 100 ns or so which are comparable to a carrier drift time in a silicon detector. Detector signals should be read within the beam crossing times. The fast operation and the high charge collection efficiency of the double-metal layer, double sided silicon strip detector were studied by computer simulations taking radiation damage into account. The result was presented at the eighth European Symposium on Semiconductor Detectors, Schloss Elmau, Germany.The ladder was fabricated from the double-metal layer, double sided silicon strip detectors and front-end electronics. The ladder should be built with a mechanical accuracy comparable to the position resolution of the silicon detector. We developed precise fixtures for this purpose. We succeeded to operate the ladder. The ladder was fabricated and tested in cooperation with the SVX-II group, CDF, Fermilab, USA.
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Y.Iwata, T.Ohsugi et al.: "Optimal P-Stop Pattern for the N-side Strip Isolation of Silicon Microstrip Detectors" IEEETransaction on Nuclear Science.Vol.45, No.3. 303-309 (1998)
Y.Iwata、T.Ohsugi 等人:“硅微带探测器 N 侧带隔离的最佳 P 停止模式”IEEETransaction on Nuclear Science.Vol.45,No.3。
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通讯作者:
Y.Iwata: "Optimal P-Stop Pattern for the N-Side Strip Isolation of Silicon Microstrip Defectors" IEEE Transactions on Nuclear Science. Vol.45 No.3. 303-309 (1998)
Y.Iwata:“硅微带缺陷器 N 侧带隔离的最佳 P 停止模式”IEEE 核科学汇刊。
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Y.Unno, Y.Iwata, T.Ohsugi et al.: "Evaluation of P-stop Structuresin the N-side of N-on-N Silicon Strip Detector" IEEETransaction on Nuclear Science. Vol.45, No.3. 401-405 (1998)
Y.Unno、Y.Iwata、T.Ohsugi 等人:“N-on-N 硅条探测器 N 侧 P 停止结构的评估”IEEE Transaction on Nuclear Science。
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通讯作者:
Y.Iwata.: "Optimal P-Stop Pattern for the N-Side Strip Isolation of Silicon Microstrip Defectors" IEEE Transactions on Nuclear Science. Vol.45No.3. 303-309 (1998)
Y.Iwata.:“硅微带缺陷器 N 侧带隔离的最佳 P 停止模式”IEEE 核科学汇刊。
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Y.Unno: "Beam Test of a Large Area n-on-n Silicon Strip Detector with Fast Binary Readout Electronics" IEEE Transactions on Nuclear Science. Vol.44 No.3. 736-742 (1997)
Y.Unno:“具有快速二进制读出电子器件的大面积 n-on-n 硅带探测器的光束测试”IEEE 核科学汇刊。
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共 7 条
Higgs search by means of τ vertex tagging
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批准号:12640278
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.11万
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财政年份:2000
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负责人:IWATA Yohsei
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依托单位:
Study of Radiation Damage of Silicon Mecrostrip Detectors
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批准号:07640412
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.47万
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财政年份:1995
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负责人:IWATA Yohsei
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依托单位:
海外基金