Innovative silicon detector technologies
Innovative silicon detector technologies
批准号:
2422395
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2020
资助国家:
英国
项目状态:
已结题
起止时间:
2020 至 --
中文摘要
半导体探测器广泛应用于粒子物理和其他领域。本文主要研究两种新型探测器的研制。lgads ATLAS和CMS都在为HL-LHC的升级计划在其跟踪器外的精确定时层。这些仪器将配备一种称为低增益雪崩探测器(lgad)的超快硅探测器,其时序分辨率可达~30 ps。lgad可用于将带电轨道连接到正确的生产顶点,从而减少高亮度LHC的堆积效应。核物理和医学物理的许多其他实验也将受益于精确的定时信息。由于在大电场中移动的电荷引发雪崩,LGADs使用电荷倍增来达到皮秒级。不幸的是,当暴露在高于约1014个粒子/平方厘米的粒子影响下时,这些装置的性能受到辐射损伤的限制。本文将对Teledyne-e2V制备的结构在辐射暴露前后的掺杂谱进行模拟,以提高LGAD辐射损伤性能。还将研究作为辐射影响函数的性能退化(信号损失、增益损失、非均匀空间响应等)。这些研究将需要仔细的实验室测量和测试光束运动。这些测量将验证TCAD模拟,提高我们对这些器件的理解,并导致新的优化雷达硬设计。耗尽单片有源像素传感器(DMAPS)DMAPS是使用标准CMOS工艺制造的位置敏感探测器。这些传感器对粒子物理实验非常有吸引力,因为它们将传感和读出电子设备集成在单层硅中。这消除了传感器和读出芯片之间的连接需要与复杂和昂贵的焊接凸点技术。DMAPS将成为下一代粒子物理实验的首选传感器技术。本文将重点对两种不同体制下的DMPAS技术进行优化:针对LHC像素探测器的进一步升级的硬辐射探测器和针对未来e+e对撞机的高精度低质量探测器。DMPAS的研发计划需要使用TCAD和传感器特性进行仿真,包括HL-LHC应用的辐射硬度研究。该项目将与TowerJazz合作,采用其180纳米和65纳米技术。
英文摘要
Semiconductor detectors are used widely in particle physics and other applications. This thesis concentrates on the development of two types of novel detectors.LGADsBoth ATLAS and CMS are planning precision timing layers outside their trackers for the HL-LHC upgrades. These will be instrumented with a type of ultra-fast silicon detector called Low Gain Avalanche Detectors (LGADs) that achieve a timing resolution of ~30 ps. LGADs can be used to connect charged tracks to the correct production vertices and therefore reduce the effect of pile up at the High Luminosity LHC. Many other experiments nuclear and medical physics would also benefit from precision timing information. LGADs use charge multiplication due to the avalanche initiated by a charge moving in large electrical fields to reach the picosecond regime. Unfortunately, the performance of these devices is limited by radiation damage when exposed to particle fluences higher than about 1014 particles/cm2. Simulation of the doping profiles to improve LGAD radiation damage performance and prompt characterization of structures fabricated by Teledyne-e2V before and after radiation exposure will be conducted during this thesis. A study of the performance degradation (loss of signal, loss of gain, inhomogeneous spatial response, etc.) as a function of radiation fluence will also be performed. These studies will require careful laboratory measurements and test beam campaigns. The measurements will validate the TCAD simulations, improve our understanding of these devices, and lead to new optimised rad-hard designs. Depleted Monolithic Active Pixels Sensors (DMAPS)DMAPS are position-sensitive detectors fabricates using standard CMOS processes. These sensors are extremely attractive for experiments in particle physics because they integrate the sensing and the readout electronics in a single layer of silicon. This removes the need for interconnection between the sensor and the readout-chip with the solder bump technology which is complex and expensive. DMAPS will become the sensor technology of choice for the next generation of experiments in particle physics.This thesis will focus on the optimization of the DMPAS technology for two different regimes: radiation-hard detector for further upgrades of the LHC pixel detectors and high-precision low-mass detector for future e+e- colliders. The R&D programme on DMPAS requires simulation with TCAD and sensor characterization, including radiation hardness studies for the HL-LHC application. This programme will be conducted in collaboration with TowerJazz using its 180 nm and 65 nm technologies.
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