Carrier Compensation Mechanism in Wide Bandgap II-VI Semiconductors

宽带隙 II-VI 半导体中的载流子补偿机制

• 批准号: 08455001
• 负责人: ZHU Zigiung
• 金额: $ 4.61万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455001/
• 关键词: II-VI Semiconductor; P-type ZnSe; Carrier Compensation Mechanism; Optical spectroscopy; Electrical Characterization; Ion Beam Analysis; Compensation Model; Energy Level Diagram for ZnSe : N; II-VI族半導体; P型ZnSe; イオンピーム法; ZnSe:N準位図; ZnSe; p型半導体

There has been a lomg history of attempts to achieve reliable p-type wide bandgap II-VI semiconductors Park et al.and Ohkawa et al.were the first to successfully dope ZnSe grown by MBE using active nitrogen as a dopant and this important step led to the first demonstration of II-VI blue-green laser diodes. IIowever, the key issue remains how to achieve high conductivity p-type materials and pinpoints the mechanism of hole compensation. In this study, the identification and characterization of impurity levels in ZnSe : N have been extensively made by means of high resolution spectroscopy, photoluminescent excitation, selective photoluminescent excitation, deep level spectroscopy.Over the past few years nitrogen has been found to be the best dopant in the production of p-type ZnSe by MBE.The mechanism of compensation appears to be the formation of this new type of donor center with a binding energy of 57meV.Evidence for the deep donor comes from the appearance of the DAP lines in the PL, … More spectra from ZnSe : N with a high N concentration. Additionally, a donor with a binding energy of 88meV and an acceptor with a binding energy of 170meV have been found in highly doped ZnSe : N through detailed optical studie. The energy lovel diagram has been proposed for N-doped ZnSe.The caues of the compensation phenomenon have been attributed experimentally and theoretically to a number of origins : (i) compensation by native point defects (eg.a donor-type complex defect consisting of an N-acceptor and a selenium vacancy on a next nearest neighbor site (N_<Se>-Zn-V_<Se>) ; (ii) compensation by N clusters, for instance, a double donor consisting of a N acceptor and a N atom on adjacent Zn site (N_<Se>-N_<Zn>) ; (iii) compensation by N atoms at interstitial sites (N_<int>) ; and (iv) strong lattice relaxation. In addition, the nitrogen could form deep instead of shallow acceptors such as (N_<Se>-Zn-N_<Se>). The origins of the deep donor and acceptor centers found in the optical studies have been correlated to these N-associated complex defects and proposed. Less

在实现可靠的p型宽带隙II-VI半导体方面，Park等人和Ohkawa等人是第一个成功地用活性氮作为掺杂剂掺杂MBE生长的ZnSe的人，这一重要步骤导致了II-VI蓝绿色激光二极管的首次演示。然而，如何获得高导电性的p型材料和确定空穴补偿机制仍然是关键问题。在本研究中，采用高分辨率光谱、光致发光激发、选择性光致发光激发、深能级光谱等方法对ZnSe: N中的杂质水平进行了广泛的鉴定和表征。近年来，氮是MBE法制备p型ZnSe的最佳掺杂剂。补偿机制似乎是形成这种结合能为57meV的新型给体中心。深施主的证据来自于PL中DAP谱线的出现，更多的光谱来自于高N浓度的ZnSe: N。此外，通过详细的光学研究，在高掺杂ZnSe: N中发现了一个结合能为88meV的给体和一个结合能为170meV的受体。提出了n掺杂ZnSe的能级图。补偿现象的原因已归因于实验和理论上的一些来源：(1)补偿的原生点缺陷(如；一个供体型复杂缺陷由一个n受体和一个硒空位组成（N_<Se>-Zn-V_<Se>）；（ii）由N簇补偿，例如，由N受体和相邻Zn位上的N原子组成的双给体（N_<Se>-N_<Zn>）；（iii）间隙位N原子的补偿（N_<int>）；(4)强晶格弛豫。此外，氮可以形成深层而不是浅层受体，如（N_<Se>-Zn-N_<Se>）。在光学研究中发现的深层供体和受体中心的起源与这些n相关的复杂缺陷有关。少

项目成果

F.Lu: "photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe" Journal of Crystal Growth. 8(15). 2425-2528 (1997)

F.Lu：“光致导纳光谱法检测氮掺杂高度补偿 ZnSe 中的浅电子陷阱”《晶体生长杂志》。

Z.Zhu: "Electronic states in ZnSe/ZnTe type-II superlattice studed by Capacitance transient spectroscopy" Journal of Applied Physics. 82. 3402-3407 (1997)

Z.Zhu：“通过电容瞬态光谱研究的 ZnSe/ZnTe II 型超晶格中的电子态”应用物理学杂志。

T.Yao: "Nitrogen doping and Carrier compensation in P-ZnSe" Journal of Crystal Growth. 159. 214-220 (1996)

T.Yao：“P-ZnSe 中的氮掺杂和载流子补偿”晶体生长杂志。

Z.Zhu: Properties of Wide Bandgap II-VI Semiconductors. The Institute of Electrical Engineering, London, United, Kindom, 247 (1997)

Z.Zhu：宽带隙 II-VI 半导体的特性。

Z.Zhu: "Carrier concentration enhancement of P-type ZnSe and ZnS by co-doping with active nitrogen and tellurium by using a δ-doping" Applied physics Letters. 70(9). 1143-1145 (1997)

Z.Zhu：“通过使用 δ 掺杂与活性氮和碲共掺杂来增强 P 型 ZnSe 和 ZnS 的载流子浓度”应用物理快报 70(9) (1997)。