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Fabirication Technology of Three-Dimentional Microstructures Made of Single-crystal Silicon

单晶硅三维微结构制备技术

基本信息

批准号：
08455045
负责人：
SATO Kzuo
金额：
$ 5.38万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

项目摘要

We evaluated orientation dependence in the etching rate of single-crystal silicon for two different etchants ; potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) water solutions. Etching rates for a number of crystallographic orientations were measured for a wide range of etching conditions in terms of etchants' concentration and temperature.We found that the orientation dependence significantly varied according to changes both in concentration and temperature. We also found different types of orientation dependence in etching rate around (111) between TMAH and KOH solutions. This means the bonding energy of the silicon crystal lattice is not a single factor that dominates orientation dependence, and there exist different etching mechanisms, for the two etchants.We further investigated roughening of single-crystal silicon during chemical anisotropic etching using KOH water solutions. The change in roughness strongly depends on the crystallographic orientation. We made a map showing roughness distribution as a function of orientation. Smooth surface appears in a region including (100), (200), and (311). Very rough surface appears in a region including (320) and (210). We clarified that roughened surface shows the facet textures composed of certain crystallographic planes.The obtained data allowed us numerical simulation of etching profiles which is necessary for designing fabrication process of MEMS devices in industry. On the other hand, it is also of importance for physical chemists investigating atomic-scale models of the anisotropic etching process. We are going to start an international joint research as a Grant-in-Aid Program from 1998 fiscal year investigating the etching mechanisms on the atomic scale in collaboration with the University of Twente, the Netherlands.

我们评估了两种不同的蚀刻剂，氢氧化钾（KOH）和四甲基氢氧化铵（TMAH）的水溶液中的单晶硅的蚀刻速率的取向依赖性。在不同的腐蚀剂浓度和温度条件下，测量了不同晶向的腐蚀速率，发现腐蚀速率随腐蚀剂浓度和温度的变化而变化。我们还发现TMAH和KOH溶液在（111）附近的蚀刻速率具有不同类型的取向依赖性。这意味着硅晶格的键能不是一个单一的因素，主导的取向依赖性，并存在不同的蚀刻机制，为两种etchants.We进一步研究在化学各向异性蚀刻过程中使用KOH水溶液的单晶硅粗化。粗糙度的变化强烈地依赖于晶体学取向。我们制作了一张图，显示粗糙度分布作为方向的函数。平滑表面出现在包括（100）、（200）和（311）的区域中。在包括（320）和（210）的区域中出现非常粗糙的表面。我们阐明了粗糙化表面是由特定晶面组成的刻面织构，所获得的数据使我们能够数值模拟刻蚀轮廓，这对工业上设计MEMS器件的制造工艺是必要的。另一方面，它也是重要的物理化学家研究原子尺度模型的各向异性蚀刻过程。我们将从1998财政年度开始，与荷兰特文特大学合作，开展一项国际联合研究，作为一项补助金计划，调查原子尺度上的蚀刻机制。