New Hologram System Using Photochemical Holeburning Phenomena

利用光化学烧孔现象的新型全息图系统

• 批准号: 08455409
• 负责人: HIRAO Kazuyuki
• 金额: $ 3.26万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455409/
• 关键词: Hole burning; Hologram glass; Optical memory

1.IntroductionThese days, the interests in optical memory based on persistent spectral hole burning (PSHB) are increased because of its possibility of the applicaton to high density optical memory. PSHB has been observed for an organic dye doped in polymer and rare earth or transition metal doped in inorganic cyrstal or glass. Room temperature PSHB phenomena have been already observed for Sm^<2+> doped fluoride crystal and glasses. However, these materials'GAMMA_<ih> (inhomogeneous line width)/GAMMA_h (homogeneous line width) which is the parameter of data multiplicity is an order of unity. For the application of PSHB materials to optical memory, high operating temperature and a large GAMMA_<ih>/GAMMA_h should be required. Therefore, in this study, the relationship between the optical hole and glass structure is examined.2.Results and Discussionphoto-chemical hole burning (PHB) can be applied for data storaging system as well as a powerful method for studying the local structure around optical centers. We have studied both aluminum, magnesium and silicon ion effects and alkali ino effects on the hole burning and phonon sideband for borate glasses which show up the PHB at room temperature. The hole burning was measured on ^5D_0-^7F_0 transition of Sm^<2+> and phonon sideband apectrum for ^5D_0-^7F_0 transition of Eu^<3+>. The hole width is closely related to the local structure change, especially, seems to deacrease with decreasing non-bridging oxygens produced around raee rarth ion. In the case of sodium alumino-borate glasses, the hole width decreases cosiderably with increasing alumina. The the ratio of GAMMA_<ih>/GAMMA_h of 85B_2O_310Al_2O_35aN_2OlSm_2O_3 glass is about 80 at room temperature, which is the largest value reported up to now. Moreover, the hole-burning speed has been drastically improved by means of the X-ray irradiation to the specimens.

1.近年来，基于持续光谱烧孔（PSHB）技术的光存储器由于其在高密度光存储器中的应用前景而引起了人们的极大兴趣。对于掺杂在聚合物中的有机染料和掺杂在无机晶体或玻璃中的稀土或过渡金属，已经观察到PSHB。在掺Sm^<2+>氟化物晶体和玻璃中已经观察到室温PSHB现象.但这些材料的<ih>非均匀线宽/均匀线宽是一个统一的数量级。对于PSHB材料在光存储器中的应用，应该要求高的操作温度和大的Gamma_h<ih>/Gamma_h。因此，本研究探讨了光孔与玻璃结构之间的关系。2.结果与讨论光化学烧孔技术不仅可以应用于数据存储系统，而且可以作为研究光学中心周围局部结构的有力手段。本文研究了铝、镁、硅离子和碱金属离子对室温下显示出聚羟基丁酸的硼酸盐玻璃的烧孔和声子边带的影响。测量了Sm^&lt;2+&gt;的^5D_0-^7F_0跃迁和Eu^&lt;3+&gt;的^5D_0-^7F_0跃迁的声子边带谱。空穴宽度与局域结构变化密切相关，特别是随稀土离子周围产生的非桥氧减少而减小。在钠铝硼酸盐玻璃的情况下，孔宽度随着氧化铝的增加而显著减小。85 <ih>B_2O_310Al_2O_35aN_2OlSm_2O_3玻璃在室温下的伽马_ /伽马_h之比约为80，这是迄今为止报道的最大值。此外，烧孔速度已大大提高了通过X射线照射的样品。

项目成果

Doo-Hee Cho: "Photochemical Hole Burning of Sm^<2+>-doped Aluminosilicate and Borosilicate Glasses" Journal of Non-Crystalline Solids. 215. 192-200 (1997)

Doo-Hee Cho：“Sm^2-掺杂的铝硅酸盐和硼硅酸盐玻璃的光化学烧孔”非晶固体杂志。

Doo-Hee Cho, K.Hirao, N.Soga and M.Nogami: "Photochemical Hole Burning in Sm^<2+>-doped Aluminosilicate and Borosilicate Glasses" Journal of Non-Crystalline Solids. 215. 192-200 (1997)

Doo-Hee Cho、K.Hirao、N.Soga 和 M.Nogami：“Sm^2 掺杂的铝硅酸盐和硼硅酸盐玻璃中的光化学烧孔”非晶固体杂志。

Doo-Hee Cho: "Acceleration of Photochemical Hole Burning Rate" Journal of Luminescence. 68. 171-178 (1996)

Doo-Hee Cho：“光化学烧孔速率的加速”发光杂志。

Doo-Hee Cho, K.Hirao, K.Tanaka anB N.Soga: "Acceleration of Photochemical Hole Burning Rate for Sm^<2+>-doped borate Glasses by X-ray Irradiation" Journal of Luminescence. 68. 171-178 (1996)

Doo-Hee Cho、K.Hirao、K.Tanaka 和 B N.Soga：“通过 X 射线照射加速 Sm^2 掺杂硼酸盐玻璃的光化学烧孔速率”发光杂志。

平尾 一之: "Room Temperature PHB Materials and Application" Micro Optics News. 14. 24-29 (1996)

Kazuyuki Hirao：“室温 PHB 材料及其应用”微光学新闻 14. 24-29 (1996)。