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Development of an Apparatus for Measuring Submicroscopic Current Distribution and Evaluation of Interface Delamination and Atom Migration irr Electronic Devices

电子器件亚微观电流分布测量及界面分层和原子迁移评估装置的开发

基本信息

批准号：
10305010
负责人：
OTHANI Ryuichi
金额：
$ 25.86万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

项目摘要

1. Electric field analysis for predicting the distribution of multiple cracks by means of direct current electrical potential methodCrack-current modification method was proposed for analyzing the electric field around multiple cracks. Electric field analysis was carried out for randomly distributed disk-shaped cracks in a three-dimensional conductor and for distributed through-cracks in a two-dimensional one. Based on the results of the analysis, a procedure was proposed for predicting the distribution of multiple cracks by direct current electrical potential method.2. Evaluation of a small defect existing right under the surface of conductive materialsA small defect existing right under the surface of the conductive material was evaluated by means of a scanning probe microscone with current measuring system where electric current was supplied through a cantilever to the conductor and the defect was evaluated by the change in the current. Electric analysis was carried out for discussing the basis of this apparatus by the crack-current modification method which was used for the electric field analysis around multiple cracks. It was clarified by actual current measurement that contact condition or contact electric resistance between the cantilever and the specimen has a great influence on the amount of current. In order to find the best measuring condition, electric analysis was carried out simulating the apparatus in which the contact area was fluctuated intentionally. The following results were obtained. Modification of the shape of a cantilever tip is necessary. Further development is needed on the servomechanism of cantilever.

1.用直流电位法预测多裂纹分布的电场分析提出了用裂纹电流修正法分析多裂纹周围的电场。对三维导体中随机分布的盘形裂纹和二维导体中分布的贯穿裂纹进行了电场分析。根据分析结果，提出了直流电位法预测多裂纹分布的方法.导电材料表面正下方存在的小缺陷的评估通过具有电流测量系统的扫描探针显微镜评估导电材料表面正下方存在的小缺陷，其中通过悬臂向导体提供电流，并通过电流的变化评估缺陷。采用裂纹电流修正法对多裂纹周围的电场进行了分析，并对该装置的原理进行了讨论。通过实际的电流测量表明，悬臂梁与试件的接触状态或接触电阻对电流的大小有很大的影响。为了找到最佳的测量条件，进行了电分析模拟装置中的接触面积波动故意。获得了以下结果。悬臂梁尖端的形状的修改是必要的。悬臂梁式伺服机构的研究有待于进一步的发展。