Fabrication of high-quality diamond thin films by employing Xe-added MPCVD for diamond MISFET applications

1. In order to obtain diamond thin films of high quality and favorable electronic properties， we have examined the role of Xe addition to the microwave plasma-assisted {CH-D24-D2+ H-D22-D2} chemical vapor deposition （CVD）。为钻石薄薄的电影的增长。为了使Xe添加剂的影响明显，我们将结果与这些添加剂的效果进行比较。Xe加成物在增加的增长率（约为1%-Xe的50%增加）中的影响，而没有晶体的退化，以及在金刚石金属绝缘子半导体晶体管的转化过程中的标记改进（MISFETs）。根据等离子体发射特别、拉曼移位和微波等离子体影响测量的结果，Xe添加剂对降低其激发能量的影响，降低等离子体温度，并对原子氢和CH的分离具有足够的影响（预校准器），但不包括CH D22 D2 （预校准器）。在沉积氟化物和硝酸盐后，钻石薄膜表面被表征为X射线光电子光谱学以探测化学键合。C1峰的高能量方面可考虑地转移到C1峰的高能量方面，在500℃下观察到样品储存的CaF D22。Data suggest that the fluorination proceeds on the diamond surface via the deposition of CaFイD22イD2 and the Degree of the fluorination depends on the adatoms on the diamond surface before deposition of CaFイD22イD2。

1. In order to obtain diamond thin films of high quality and favorable electronic properties, we have examined the role of Xe addition to the microwave plasma-assisted {CHィイD24ィエD2+HィイD22ィエD2} chemical vapor deposition (CVD). for diamond thin films growth. To make clear effects of Xe addition, we compared the results with those of Ar addition. Effects of Xe addition were evident in the increased growth rate (about 50% increase for 1 %-Xe), without degrdation of the crystallinity, and in the marked improvement in the transconductance of diamond metal-insulator-semiconductor transistors (MISFETs). Based on the results of the plasma emission spectra, Raman shift and microwave plasma impedance measurements, the prominent effects of Xe addition were attributed to its lower excitation energy, which reduces plasma temperature and it is sufficient for the dissociation of atomic hydrogen and CHィイD23ィエD2 (precursors for diamond crystallization) but not CHィイD22ィエD2 radicals.2. Diamond thin film surfaces after deposition of fluoride and nitride have been characterized by X-ray photoelectron spectroscopy for probing the chemical bonding. Considerable shift to higher energy side in the peaks of C 1s level was observed in the sample deposited CaFィイD22ィエD2 at 500℃. The data suggest that the fluorination proceeds on the diamond surface via the deposition of CaFィイD22ィエD2 and the degree of the fluorination depends on the adatoms on the diamond surface before deposition of CaFィイD22ィエD2.