Design of Bismuth Layer-Structured Oxides with Regions of Different Electrical Properties

具有不同电性能区域的铋层状结构氧化物的设计

• 批准号: 10450318
• 负责人: MIYAYAMA Masaru
• 金额: $ 7.1万
• 依托单位: THE UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450318/
• 关键词: FERROELECTRICS; SINGLE ORYSTAL; BISMUTH LAYER-STRUCTURED OXIDES; INTERGROWTH STRUCTURE; REMANENT POLARIZATION; COERCIVE FIELD; FERROELECTRIC PHASE TRANFORMATION; 層状ペロブスカイト; 導電性ペロブスカイト; p型半導性

Bismuth layer-structured oxides (BLSOs) have the crystal structure composed of bismuth oxide layers and pseudo-perovskite layers, and known to show ferroelectric and piezoelectric properties with a strong anisotropy. In the present study, single crystals of several BLSOs were grown and correlations between crystal structure (the number of oxygen octahedron between bismuth layers : m) and ferroelectric properties were evaluated. It was found that the remanent polarization was larger in the BLSO with a high Curie temperature and the coercive electric field was smaller and the polarization reversal velocity was higher in BLSO with a large m. Polycrystals of several intergrowth structured BLSOs, in which perovskite layers with different m are stacked alternately in the lattice, were prepared and their ferroelectric phase transformations and ferroelectric properties were examined. The intergrowth BLSOs with m = 1-2 and 2-3 showed two phase transformations at temperatures of transformation of component materials, and that with m = 3-4 showed one transformation at the middle of transformation temperatures of component materials. Some of the intergrowth BLSOs with m = 2-3 and 3-4 was found to show a higher remanent polarization than those of component materials.

铋层结构氧化物（BLSOs）具有由氧化铋层和拟钙钛矿层组成的晶体结构，具有较强的各向异性，具有铁电和压电特性。在本研究中，生长了几种BLSOs的单晶，并评估了晶体结构（铋层间氧八面体数：m）与铁电性能之间的相关性。结果表明：高居里温度的BLSO剩余极化较大，m较大的BLSO矫顽力电场较小，极化反转速度较高。制备了几种不同m的钙钛矿层在晶格中交替堆叠的互生结构BLSO多晶，并对其铁电相变和铁电性能进行了研究。m = 1-2和2-3的互生blso在组分材料相变温度下发生两次相变，m = 3-4的互生blso在组分材料相变温度中间发生一次相变。其中m = 2-3和3-4的共生blso的剩余极化率高于组分材料。

项目成果

Yuji Noguchi: "Analysis of Crystal Structure by the Rietvelt Method and Ferroelectric properties of Sr_<1-x>Bi_<2+x>Ta_2O_9"Key Engineering Mater.,Electroceramics in Japan III. (印刷中). (2000)

野口裕二：“用Rietvelt法分析Sr_<1-x>Bi_<2+x>Ta_2O_9的晶体结构和铁电性能”，日本电陶瓷III（出版中）。

Yong-Il Park: "Fabrication of Bismuth Layer Structured Lead Bismuth Titanate Thin Films Through Sol-gel Spin Coating"Ceramic Trans.; Dielect. Ceram. Mater. (印刷中). (2000)

Yong-Il Park：“通过溶胶-凝胶旋涂制备铋层结构钛酸铅薄膜”，陶瓷材料（2000 年出版）。

Yong-II Park: "Fabrication of PbBi_4Ti_4O_<15> and Pb_2Bi_4Ti_5O_<18> Thin Films by Sol-gel Method"J.Ceram.Soc.Jpn.. 107・5. 413-418 (1999)

Yong-II Park：“通过溶胶-凝胶法制备 PbBi_4Ti_4O_<15> 和 Pb_2Bi_4Ti_5O_<18> 薄膜”J.Ceram.Soc.Jpn.. 107・5（1999）。

Sung-Lak Ahn: "Fabrication and Electrical Properties of Bismuth Layer-structured Bi_5Ti_3Fe_<1-x>Mn_xO_<15> Ceramics"Mater.Rex.Bull.. (印刷中). (2000)

Sung-Lak Ahn：“铋层状结构 Bi_5Ti_3Fe_<1-x>Mn_xO_<15> 陶瓷的制造和电性能”Mater.Rex.Bull..（出版中）。

Hiroshi Irie: "Structure dependence of Ferroelectric Properties in Single Crystals of Bismuth Layer-Structured Ferroelectrics"Key Engineering Mater., Electroceramics in Japan III. (印刷中). (2000)

Hiroshi Irie：“铋层状结构铁电体单晶中铁电特性的结构依赖性”关键工程材料，日本电陶瓷 III（出版中）。