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Design of Bismuth Layer-Structured Oxides with Regions of Different Electrical Properties

Design of Bismuth Layer-Structured Oxides with Regions of Different Electrical Properties
具有不同电性能区域的铋层状结构氧化物的设计
批准号:
10450318
负责人:
MIYAYAMA Masaru
金额:
$7.1万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999

项目摘要

项目成果

MIYAYAMA Masaru的其他基金

相关文献

中文摘要
翻译
铋层状氧化物(BLSO)是由铋氧化物层和伪钙钛矿层组成的晶体结构,具有很强的各向异性,具有铁电和压电性能。在本研究中,我们生长了几种BLSO的单晶,并研究了晶体结构(铋层间氧八面体数目:m)与铁电性能之间的关系。结果表明,居里温度高的BLSO剩余极化较大,m较大的BLSO具有较小的矫直电场和较高的极化反转速度。本文制备了几种不同m的钙钛矿层交替堆积在晶格中的共生结构BLSO多晶,并研究了它们的铁电相变和铁电性能。M=1-2和2-3的共生BLSO在组份相变温度下有两次相变,m=3-4的共生BLSO在组份相变温度中点有一次相变。一些m=2-3和3-4的共生BLSO显示出比组分材料更高的剩余极化。
英文摘要
Bismuth layer-structured oxides (BLSOs) have the crystal structure composed of bismuth oxide layers and pseudo-perovskite layers, and known to show ferroelectric and piezoelectric properties with a strong anisotropy. In the present study, single crystals of several BLSOs were grown and correlations between crystal structure (the number of oxygen octahedron between bismuth layers : m) and ferroelectric properties were evaluated. It was found that the remanent polarization was larger in the BLSO with a high Curie temperature and the coercive electric field was smaller and the polarization reversal velocity was higher in BLSO with a large m. Polycrystals of several intergrowth structured BLSOs, in which perovskite layers with different m are stacked alternately in the lattice, were prepared and their ferroelectric phase transformations and ferroelectric properties were examined. The intergrowth BLSOs with m = 1-2 and 2-3 showed two phase transformations at temperatures of transformation of component materials, and that with m = 3-4 showed one transformation at the middle of transformation temperatures of component materials. Some of the intergrowth BLSOs with m = 2-3 and 3-4 was found to show a higher remanent polarization than those of component materials.
期刊论文(30)
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科研奖励(0)
会议论文
Yuji Noguchi: "Analysis of Crystal Structure by the Rietvelt Method and Ferroelectric properties of Sr_<1-x>Bi_<2+x>Ta_2O_9"Key Engineering Mater.,Electroceramics in Japan III. (印刷中). (2000)
野口裕二:“用Rietvelt法分析Sr_<1-x>Bi_<2+x>Ta_2O_9的晶体结构和铁电性能”,日本电陶瓷III(出版中)。
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Yong-Il Park: "Fabrication of Bismuth Layer Structured Lead Bismuth Titanate Thin Films Through Sol-gel Spin Coating"Ceramic Trans.; Dielect. Ceram. Mater. (印刷中). (2000)
Yong-Il Park:“通过溶胶-凝胶旋涂制备铋层结构钛酸铅薄膜”,陶瓷材料(2000 年出版)。
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Yong-II Park: "Fabrication of PbBi_4Ti_4O_<15> and Pb_2Bi_4Ti_5O_<18> Thin Films by Sol-gel Method"J.Ceram.Soc.Jpn.. 107・5. 413-418 (1999)
Yong-II Park:“通过溶胶-凝胶法制备 PbBi_4Ti_4O_<15> 和 Pb_2Bi_4Ti_5O_<18> 薄膜”J.Ceram.Soc.Jpn.. 107・5(1999)。
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Sung-Lak Ahn: "Fabrication and Electrical Properties of Bismuth Layer-structured Bi_5Ti_3Fe_<1-x>Mn_xO_<15> Ceramics"Mater.Rex.Bull.. (印刷中). (2000)
Sung-Lak Ahn:“铋层状结构 Bi_5Ti_3Fe_<1-x>Mn_xO_<15> 陶瓷的制造和电性能”Mater.Rex.Bull..(出版中)。
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30
    Development of ultra-thin-film batteries and capacitors
    • 批准号:
      17206065
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $27.62万
    • 财政年份:
      2005
    • 负责人:
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    • 依托单位:
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    • 批准号:
      14205096
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $33.2万
    • 财政年份:
      2002
    • 负责人:
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    • 依托单位:
    Development of Bismuth Layer-structured Oxide Devices with Ferroelectric and Conductive Intergrowth Layers
    • 批准号:
      11555163
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
      $6.98万
    • 财政年份:
      1999
    • 负责人:
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    • 依托单位:
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    • 批准号:
      08555151
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $9.92万
    • 财政年份:
      1996
    • 负责人:
      MIYAYAMA Masaru
    • 依托单位: