Electron-phonon interaction and its effects on electronic properties in quantum confined systems
量子限制系统中电子-声子相互作用及其对电子特性的影响
基本信息
- 批准号:10640312
- 负责人:
- 金额:$ 2.18万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1998
- 资助国家:日本
- 起止时间:1998 至 1999
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
(1) Polaron effects on an exciton in quantum well with an infinite potential barrier and a finite one are calculated and discussed. Role of the bulk-type and the interface-type phonon changes according to the large to small well width, which reflects the dimensional character of an exciton.(2) LO phonons and electron-LO phonon interaction in mixed polar crystals are formulated. Self-energy shift and effetvie mass correction are calculated. Also LO phonons (bulk and interface type) and electron-LO phonon interaction in quantum well consisting of mixed polar crystals are formulated and are shown to be divided into three types according to whether the well or the barrier is made of mixed crystals. Polaron energy shifts are calculated in various systems. Moreover polaron effects on exciton in quantum well consisting of mixed polar crystals are calculated and are discussed in relation to the well-width dependence and the contribution of the various LO phonon modes on properties such as exci … More ton-LO phonon interaction and exciton polaron energy shift. Specially the method is applied to the interesting quantum well systems consisting of mixed polar crystals with the use of qallium nitride or zinc compounds.(3)Effects of LO phonons (bulk and interface type) for an electron, confined in a spherical quantum dot embedded in a nonpolar matrix are studied theoretically. The variational method is developed to provide the results, being valid for the wide range of the dot radius and the electron-LO phonon coupling strength. Also the size dependence of polaron effects on an exciton in a spherical quantum dot is studied by using a variational method. Exciton energy, exciton-phonon interaction energy and the virtual phonon number are calculated. It is clearly shown that polaron effects on an exciton vanish in the limit of the small quantum dot.(4)CuCl microcrystals embedded in an SiOィイD22ィエD2 matrix is prepared by an novel RF-magnetoron sputtering combined with an inductively coupled plasma. Optical properties (absorption and luminescence spectra) of the exciton and the biexciton in the system are investigated. In the luminescence spectra intensities of the exciton and the biexciton have linear and superlinear dependencies, respectively. Less
(1)计算并讨论了具有无限势垒和有限势垒的量子阱中激子的极化子效应。体型和界面型声子的作用随井宽的大小而变化,反映了激子的量纲特征。(2)建立了混合极性晶体中LO声子和电子-LO声子相互作用的公式。计算了自能位移和有效质量修正。此外,LO声子(体积和界面类型)和电子-LO声子在由混合极性晶体组成的量子阱中的相互作用也被制定,并显示根据是否由混合晶体构成的阱或势垒分为三种类型。在各种系统中计算极化子的能量位移。此外,还计算了由混合极性晶体组成的量子阱中极化子对激子的影响,并讨论了与阱宽依赖关系和各种LO声子模式对激子相互作用和激子极化子能量位移等性质的贡献。该方法特别应用于氮化镓或锌化合物混合极性晶体组成的有趣量子阱系统。(3)从理论上研究了LO声子(体积和界面类型)对嵌入非极性矩阵的球形量子点中的电子的影响。本文提出了变分方法,该方法适用于大范围的点半径和电子- lo声子耦合强度。用变分方法研究了球面量子点中极化子效应对激子的大小依赖性。计算了激子能量、激子-声子相互作用能和虚声子数。结果表明,激子上的极化子效应在小量子点的极限下消失。(4)采用新型射频磁控溅射与电感耦合等离子体相结合的方法,制备了嵌入在SiO φ φ D22 φ φ D2基体中的CuCl微晶体。研究了系统中激子和双激子的光学特性(吸收光谱和发光光谱)。在发光光谱中,激子和双激子的强度分别呈线性和超线性关系。少
项目成果
期刊论文数量(44)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
R.Zheng,M.Matsuura: "Electron-optical phonon interaction in quantum wells consisting of mixed instals"Phys.Rev.B. 60. 4937-4943 (1999)
R.Zheng,M.Matsuura:“由混合装置组成的量子阱中的电子光声子相互作用”Phys.Rev.B。
- DOI:
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- 影响因子:0
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R.Zheng,M.Matsuura: "Optical phonons and electron-phonon interaction in quantum wells consisting of mixed crystals"J.of Luminescence. (in press). (2000)
R.Zheng,M.Matsuura:“由混合晶体组成的量子阱中的光学声子和电子-声子相互作用”J.of Luminescent。
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- 影响因子:0
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H.Kurisu,K.Nagoya,N.Nakayama,S.Yamamoto,M.Matsuura: "Exciton and biexciton properties of cure microcrystals in a SiO_2 matrix prepared by sputtering method"J.of Luminescence. (in press). (2000)
H.Kurisu、K.Nagoya、N.Nakayama、S.Yamamoto、M.Matsuura:“溅射法制备的 SiO_2 基体中固化微晶的激子和双激子性质”J.of Luminescent。
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- 发表时间:
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- 影响因子:0
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- 通讯作者:
K. Oshiro, K. Akai and M. Matsuura: "Polaron in a spherical quantum dot embedded in a nonpolar matrix."Phys. Rev. B. 58. 7986-7993 (1998)
K. Oshiro、K. Akai 和 M. Matsuura:“嵌入非极性矩阵中的球形量子点中的极化子。”
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- 影响因子:0
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名古屋和孝,栗巣普揮,赤井光治,山本節夫,松浦満,他: "スパッタング法を用いた半導体超微粒子の作製" 光物性研究会'98論文集. 279-282
Kazutaka Nagoya、Fuki Kurisu、Mitsuharu Akai、Setsuo Yamamoto、Mitsuru Matsuura 等人:“使用溅射法制备半导体超细颗粒”光物理物理研究组论文集98。
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MATSUURA Mitsuru其他文献
MATSUURA Mitsuru的其他文献
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{{ truncateString('MATSUURA Mitsuru', 18)}}的其他基金
Electronic characteristics of Metal/Insulator Super-lattice, based on the first principle electronic structure calculation
基于第一原理电子结构计算的金属/绝缘体超晶格的电子特性
- 批准号:
13640333 - 财政年份:2001
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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