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Electronic characteristics of Metal/Insulator Super-lattice, based on the first principle electronic structure calculation

Electronic characteristics of Metal/Insulator Super-lattice, based on the first principle electronic structure calculation
基于第一原理电子结构计算的金属/绝缘体超晶格的电子特性
批准号:
13640333
负责人:
MATSUURA Mitsuru
金额:
$1.92万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002

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中文摘要
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英文摘要
Based on the density functional theory and the FLAPW method, the first principle electronic structure calculation has been performed for the metal Ti/Insulator MgO Superlattice.At first, atomic configuration in the superlattice interface is determined from the comparison of calculated total energies. The calculated result shows that Ti atom is in contact with the 0 atom at the interface. Based on this atomic configuration at the interface, electronic band structure of the superlattice is calculated. It is found that there are two kinds of electronic states.One is the states, which exist mainly in only the Ti or MgO layer and receive the quantum confinement effects (quasi-two dimensional electronic states). Another is the states which exist in the both Ti and MgO layers and have the finite dispersion for energy. Also there are metallic states in a Ti layer within the band gap in an insulator MgO layer and then the metallic states constitute the quasi two-dimensional electronic states in a metallic Ti layer.Based on the electronic structure and the experimental band gap in MgO, band diagram of Ti/MgO superlattices, which shows the relative position of the conduction and valence electronic states in Ti and MgO layers is obtained.Also, calculated electronic band structure is used to calculate a tunneling current, i.e., a tunneling of an electron between two metallic Ti layers through the thin MgO layer under an electric field.Xray photoelectron spectra (XPS) has been measured in the metal Ti/insulator MgO superlattice and has been discussed in relation to the valence band density of states. Two spectra before etching and after 5-minutes etching show the difference, which reflect the electronic states in MgO layer and Ti layer, being in good agreement of the theoretical density of the state. This XPS experiment is considered to show the reliability of our theoretical electronic structure calculation.
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古賀健治, 櫻井俊爾, 赤井光治, 門 哲男, 松浦 満: "金属Ti/絶縁体MgO超格子の電子構造と電子特性"第12回光物性研究会論文集. 114-117 (2001)
Kenji Koga、Shunji Sakurai、Mitsuharu Akai、Tetsuru Matsuura:“金属 Ti/绝缘体 MgO 超晶格的电子结构和电子性质”第 12 届光物理物理研究组论文集 114-117(2001)。
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Naoki Arita, Shunji Sakurai, Hiroki Kurisu, Setsuo Yamamoto, Mitsuru Matsuura: "Thermoelectric Properties of Mg_2Si Processed by Spark Plasma Sintering Method"Transactions of the Materials Research Society of Japan. (印刷中).
Naoki Arita、Shunji Sakurai、Hiroki Kurisu、Setsuo Yamamoto、Mitsuru Matsuura:“用火花等离子烧结法加工的 Mg_2Si 的热电性能”日本材料研究学会会刊(正在出版)。
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29
    Electron-phonon interaction and its effects on electronic properties in quantum confined systems
    • 批准号:
      10640312
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.18万
    • 财政年份:
      1998
    • 负责人:
      MATSUURA Mitsuru
    • 依托单位:
    海外基金