权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Computer Simulation of Radial Oxygen Distribution in Silicon Czochralski-grown Single Crystal

直拉硅单晶中径向氧分布的计算机模拟

基本信息

批准号：
10650019
负责人：
SUGAWARA Katsuro
金额：
$ 2.18万
依托单位：
Nihon University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650019/
关键词：
silicon single crystal reaction between Si melt and quartz crucible convection in Si melt SiO evaporation oxygen segregation finite difference method finite element method fraction solidified

项目摘要

1. Research target : computer simulation of radial oxygen distribution in Si Czochralski-grown single crystal to improve its uniformity.2. Research main result(1) Research principle : we simulate a radial oxygen distribution taking a series of processes, incorporation of oxygen originated by reaction Si melt and high purity quartz crucible- convective diffusion of oxygen in Si melt-SiO evaporation through Si melt free surface-oxygen segregation into Si single crystal, into consideration and find the simulation condition to explain the measured distribution.(2) Finite difference analysis for simplified model : we simulated the radial oxygen distribution for the simplified melt shape of a rectangular cross section and the simulation results could explain the measured oxygen concentration profile.(3) Finite element analysis for actual, complex model : we simulated the radial oxygen distribution for the actual, curved growing interface model and the simulation results agreed with the measured oxygen concentration profile by no difference.(4) Finite difference analysis of dopant concentration profile for simplified model : we simulated the radial phosphorus distribution for the simplified melt shape of a rectangular cross section, and the simulation results could explain the measured dopant concentration profile, especially more uniform distribution when we added PH_3 through Si melt free surface in addition the conventional doping in the melt.(5) 3D computer graphics of Si single crystal lattice image and Si crystal defect image : we visualized 3D computer graphics of Si single crystal lattice image and Si crystal defect image such as COP-crystal-originated particle-and these contents are very effective to understand VLSI devices structure of atomic scale.

1.研究目标：计算机模拟直拉法生长硅单晶中氧的径向分布，提高其均匀性.研究主要结果（1）研究原理：模拟了硅熔体与高纯石英坩埚反应产生的氧的掺入--氧在硅熔体中的对流扩散--硅熔体自由表面的蒸发--氧向硅单晶中的偏聚这一系列过程的径向氧分布，并找到了解释测量分布的模拟条件。(2)简化模型的有限差分分析：模拟了矩形截面简化熔体形状下的径向氧分布，模拟结果可以解释测量的氧浓度分布。(3)实际复杂模型的有限元分析：模拟了实际弯曲生长界面模型的径向氧分布，模拟结果与实测氧浓度分布基本一致。(4)简化模型的掺杂浓度分布的有限差分分析：我们模拟了简化的矩形截面熔体形状的径向磷分布，模拟结果可以解释测量的掺杂浓度分布，特别是在熔体中常规掺杂的基础上，通过熔体自由表面添加PH_3时，掺杂浓度分布更加均匀。(5)Si单晶点阵图像和Si晶体缺陷图像的三维计算机图形：我们可视化了Si单晶点阵图像和Si晶体缺陷图像的三维计算机图形，如COP-晶体起源粒子-这些内容对于理解原子尺度的VLSI器件结构非常有效。