Studies on electrode thin film materials for thermo-electric generation system

热电发电系统电极薄膜材料的研究

基本信息

  • 批准号:
    10650671
  • 负责人:
  • 金额:
    $ 2.5万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 1999
  • 项目状态:
    已结题

项目摘要

Fabrication and electric properties of TiBィイD22ィエD2 thin films : A titanium diboride has been well known to heat-resistant ceramics with relatively high electric conductivity. In the present study, we have investigated the electric properties of TiBィイD22ィエD2 thin films as one of potential candidates for electrode materials used at ultra high temperature. TiBィイD22ィエD2 thin films were prepared by RF-sputtering on glass substrates by using stoichiometric and non-stoichiometric TiBィイD22ィエD2 sintered targets. The films were mainly composed of TiBィイD22ィエD2 small crystallites, with a small amount of B-rich amorphous as a second phase. The resistivity of the typical sample was revealed to be about 180 mΩ・cm at room temperature, which was higher than bulk value (33 mΩ・cm). The temperature dependence of the resisitivities seems to be carrier concentration dependent. However, the very high carrier densities (1.2〜6.1 x 10ィイD122ィエD1/cmィイD1-3ィエD1) and the relatively small mobilities (0.3〜2.3 cmィイD12ィエD1・VィイD1-1ィエD1・sィイD1-1ィエD1) were obtained, suggesting that the conduction carrier might behave like nearly free electrons.Fabrication and electric properties of LaCoOィイD23ィエD2 thin films by ion-beam sputtering and subsequent heat treatment. The compacts consisting of LaィイD22ィエD2OィイD23ィエD2 and CoO powder were used for the targets. The films were composed of the almost single phase of LaCoOィイD23ィエD2 with a very small amount of the unidentified second phase. The resistivity at room temperature for the annealed La/Co=1/1 sample was determined to be 51 Ω・m. Whereas at the high temperature, the resistivity was found to be same order of the resistivity for bulk LaCoOィイD23ィエD2, that is, comparable to the resistivity for metals. The temperature dependence of the electric conduction of the samples also behaves like bulk LaCoOィイD23ィエD2, which means the metal-insulator transition is supposed to be realized in thin film samples.
二硼化钛D22薄膜的制备和电学性能:众所周知,二硼化钛是一种具有相对较高电导率的耐热陶瓷。在本研究中,我们已经研究了TiB掺杂D22掺杂D2薄膜的电性能,作为在超高温下使用的电极材料的潜在候选人之一。采用化学计量比和非化学计量比的TiB_xD_22_xD_2烧结靶,在玻璃基片上用射频溅射法制备了TiB_xD_22_xD_2薄膜。薄膜主要由TiB_(22)TiB_(22)TiB_(22)TiB_(22)小晶粒组成,并含有少量的富B非晶相。典型样品的室温电阻率约为180 mΩ·cm,高于体电阻率(33 mΩ·cm)。电阻率的温度依赖性似乎是载流子浓度依赖性的。然而,非常高的载流子密度(1.2 × 6.1 × 10 - 12微米D122微米D1/厘米D1-3微米D1)和相对较小的迁移率(0.3 × 2.3 cm直径D12直径D1·V直径D1-1直径D1·s直径D1-1直径D1),LaCoO_xD_23_xD_2薄膜的制备及其电学性质离子束溅射和随后的热处理。靶材采用La_2O_3-D_2D_2O_3-D_2O_3-D_2和CoO粉末组成的压块。薄膜由几乎单相的LaCoO_(23)O_(22)D_(23)O_(22)O_(23)O_(经退火的La/Co=1/1样品的室温电阻率为51 Ω·m。而在高温下,电阻率被发现是相同的数量级的电阻率为块状LaCoO的ε 23 ε 23 D2,即,与金属的电阻率相当。样品的电导率随温度的变化也类似于体LaCoO_(23)

项目成果

期刊论文数量(18)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H. Mabuchi: "OxidationResistant Coating for Gamma Titanium Aluminides by Pack Cementation"Scripta Materialia. 41-5. 511-516 (1999)
H. Mabuchi:“通过包胶结对γ钛铝化物进行抗氧化涂层”Scripta Materialia。
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    0
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A. Shutou: "Structure and electric properties of TiB_2 thin films by RF sputtering"Materials Letters. (発売予定). (2000)
A.舒头:“射频溅射TiB_2薄膜的结构和电性能”材料快报(待发表)。
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    0
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T.Miyoshi: "Magnetic and electric properties of Mn_5Ge_3/Ge nanostructured films" J.Applied Physics. (発表予定).
T.Miyoshi:“Mn_5Ge_3/Ge 纳米结构薄膜的磁电特性”J.Applied Chemistry(即将发表)。
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H.Mabuchi, H.Tsuda, T.Kawakami, S.Nakamatsu, T.Matsui and K.Morii: "Oxidation-Resistant Coating for Gamma Titanium Aluminides by Pack Cementation."Scripta Materials. 41-5. 511-516 (1999)
H.Mabuchi、H.Tsuda、T.Kawakami、S.Nakamatsu、T.Matsui 和 K.Morii:“通过包胶结实现伽马钛铝化物的抗氧化涂层。”Scripta Materials。
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    0
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A. Shutou: "Fabrication and electric properties of RF-sputtered TiB_2 thin films"Proc. of the 2000 Powder Metallurgy World Congress. (発売予定). (2000)
A. Shutou:“射频溅射TiB_2薄膜的制备和电性能”,2000年粉末冶金世界大会(待发布)。
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