Electronic Functions of nanotube structures in Group IV and III-V materials

本计画的目的是利用光学与电子能量损失量测来合成与研究第四族与第三族-第五族材料中奈米管网络的电子功能，在计画期间的第一年，利用电弧放电法制备出直径选择性的单壁奈米管，并利用光学、拉曼与电子能量损失光谱来研究。利用入射光束的共振效应，分析了样品的电子态和振动态随直径的变化。第二年，研究扩展到II-VI族材料，寻找它们可能的空心网络结构。用胶体法合成了直径为0.8 ~ 1.4nm的笼状结构的四元~六元环CdSe。通过包裹少量的CdSe分子使其稳定化，并利用胶体技术合成和分析了PbSO_4等材料的管状结构。

Aim of this project was to synthesize and investigate electronic functions of nanotube networks in group IV and III-V materials by optical and electron energy loss measurements.In the first year of project period, diameter selected single-wall carbon nanotubes are produced by arc-discharge method and studied by optical, Raman and electron energy loss spectroscopies. By resonant effect of incident beams to the sample, diameter dependent electronic and vibrational states are analyzed. In particular, metal to semiconductor transitions in terms of tube diameter and chirality are identified.In the second year, the investigation is extended to Group II-VI materials to find their possible hallow networks structures. Cage structures of CdSe of diameter from 0.8 nm to 1.4 nm consisting of 4 to 6 membered rings are synthesized by colloidal methods. They are stabilized by encaging a few molecules of CdSe.Tube structures are also synthesized and analyzed for materials such as PbSO_4 by colloidal techniques.