Development of high-temperature ceramic materials by controlling electronic structure at grain boundaries

通过控制晶界电子结构开发高温陶瓷材料

• 批准号: 11355028
• 负责人: SAKUMA Taketo
• 金额: $ 20.66万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11355028/
• 关键词: electronic structure; molecular orbital calculation; grain boundary; ceramics; alumina; transmission electron microscopy; creep; アルミナ; 耐熱性; 粒界微細構造; 分子軌道法

This project aims to examine electronic structure in grain boundaries high-temperature plastic flow in fine-grained oxide ceramic material such as alumina and zirconia. This project also aims to reveal a role of electronic structure in the vicinity of the grain boundaries in ceramics on the high-temperature mechanical property, and to develop a new theoretical method for fabricating ceramics for high-temperature use. During the research term from 1999 to 2001, we succeed in revealing role of electronic structure in the grain boundary for the high-temperature mechanical properties in ceramics, establishing the mechanisms of high-temperature deformation in terms of "grain boundary electronic structure", which is a new concept for controlling the physical properties in ceramics. One of our key topics of out results is that the high-temperature creep resistance and ductility in oxide ceramics can be designed from the viewpoint of chemical bonding state such as ionic and covalent bonding in the grain boundary. This type of approach is no doubt one of the most effective ways to break through the present situation in fabrication of advanced materials.

该项目旨在检查晶界的电子结构高温塑料流中的细粒氧化陶瓷材料，例如氧化铝和氧化锆。该项目还旨在揭示电子结构在高温机械性能上陶瓷附近的作用，并开发一种用于制造高温使用的陶瓷的新理论方法。在1999年至2001年的研究术语中，我们成功揭示了电子结构在陶瓷中高温机械性能的晶界中的作用，从而确立了“晶界电子结构”方面的高温变形机制，这是一种用于控制陶瓷物理特性的新概念。消除结果的关键主题之一是，可以从化学键合态的角度（例如晶界中的离子和共价键）来设计氧化陶瓷中的高温蠕变抗性和延展性。毫无疑问，这种方法是突破当前制造高级材料的最有效方法之一。

项目成果

H.Yoshida, Y.Ikuhara and T.Sakuma: "High-temperature creep resistance in lantanoid ion-doped polycrystalline Al_2O_3"Philos. Mag. Lett.. 79. 249-256 (1999)

H.Yoshida、Y.Ikuhara 和 T.Sakuma：“镧系离子掺杂多晶 Al_2O_3 的高温抗蠕变性”Philos。

H.Yoshida,Y.Ikuhara and T.Sakuma: "Role of grain boundary segregation on high-temperature creep resistance in polycrystalline Al2O3"Ceram.Trans.,. (in press).

H.Yoshida、Y.Ikuhara 和 T.Sakuma：“晶界偏析对多晶 Al2O3 高温蠕变阻力的作用”Ceram.Trans.，。

吉田英弘, 幾原雄一, 佐久間健人: "EDSおよびEELSによるLu微量添加Al_2O_3の粒界局所分析"日本金属学会誌. 65. 356-360 (2001)

Hidehiro Yoshida、Yuichi Ikuhara、Kento Sakuma：“通过 EDS 和 EELS 添加微量 Lu 的 Al_2O_3 的局部晶界分析”日本金属学会学报 65. 356-360 (2001)。

Committee No. 133: "Microstructure and performance in materials"Microstructure and performance in materials, JSPS. (2001)

第133号委员会：“材料中的微观结构和性能”材料中的微观结构和性能，JSPS。

H.Yoshida, Y.Ikuhara, T.Sakuma: "High-temperature creep resistance in lantanoid ion -doped polycrystalline Al_2O_3"Philos. Mag. Lett.. 79. 249-256 (1999)

H.Yoshida、Y.Ikuhara、T.Sakuma：“镧系离子掺杂多晶 Al_2O_3 的高温抗蠕变性”Philos。