Preparation of tera-Herty-band GaAs Schottky diode

在电化学阳极氧化条件下，均匀铝薄膜可自组织成具有蜂窝状针孔阵列的绝缘膜。本研究的主要主题是利用该绝缘薄膜作为掩膜制备纳米尺度的GaAs肖特基二极管。在制备靶膜之前，先用0.5 M草酸对大块铝进行阳极氧化研究。原子力显微镜观察，在一定条件下，针孔明显形成蜂窝状排列。在此基础上对砷化镓上的铝薄膜进行了类似的阳极氧化。结果成功制备了自组织的蜂窝状针孔阵列，针孔直径为30 ~ 50 nm，针孔间距为50 ~ 80 nm。在另一项研究中，观察到在硅上铟的情况下，以自组织的方式形成了纳米级肖特基二极管阵列（310）。这是在没有阳极氧化的情况下完成的，而是在超高压退火后蒸发以清洁Si（310）表面。

On electrochemical anodic oxidization uniform Al thin film can be self-organized to insulating film with a honeycomb-array of pinhole. The main theme of this study is to prepare a nanometer scaled GaAs Schottky diode using the insulating film as a mask.Prior to the preparation of target mask, the anodic oxidization of bulk Al was investigated with use of 0.5 M oxalic acid. From the atomic force microscope observation the honeycomb array of pinhole was evidently formed under a certain condition. Based on the condition similar anodic oxidization was made for Al thin film on GaAs. As a result a self-organized honeycomb array of pinhole was successfully prepared with a diameter of the pinhole of 30 to 50 nm and a distance between neighboring pinholes of 50 to 80 nm.In the course of another study it is observed that an array of nanometer-scaled Schottky diode was formed in the self-organized manner for the case of In on Si(310). This was done with no anodic oxidization but In evaporation to clean Si(310) surface followed annealing in UHV.