Preparation of tera-Herty-band GaAs Schottky diode

在电化学阳极氧化过程中，均匀的Al薄膜可以自组织成蜂窝状针孔阵列的绝缘膜。本研究的主题是以绝缘膜为掩模制备纳米尺度的GaAs肖特基二极管。在制备靶掩模之前，研究了块体铝在0.5M草酸介质中的阳极氧化。原子力显微镜观察表明，在一定条件下形成了蜂窝状的针孔阵列。在此条件下，对GaAs基Al薄膜进行了类似的阳极氧化。结果成功地制备了针孔直径为30~50 nm，相邻针孔间距为50~80 nm的自组织蜂窝状针孔阵列。在另一项研究中，观察到以In on Si(310)为例，以自组织方式形成了纳米级肖特基二极管阵列。这是在没有阳极氧化的情况下完成的，而是在超高真空中通过蒸发来清洁Si(310)表面。

On electrochemical anodic oxidization uniform Al thin film can be self-organized to insulating film with a honeycomb-array of pinhole. The main theme of this study is to prepare a nanometer scaled GaAs Schottky diode using the insulating film as a mask.Prior to the preparation of target mask, the anodic oxidization of bulk Al was investigated with use of 0.5 M oxalic acid. From the atomic force microscope observation the honeycomb array of pinhole was evidently formed under a certain condition. Based on the condition similar anodic oxidization was made for Al thin film on GaAs. As a result a self-organized honeycomb array of pinhole was successfully prepared with a diameter of the pinhole of 30 to 50 nm and a distance between neighboring pinholes of 50 to 80 nm.In the course of another study it is observed that an array of nanometer-scaled Schottky diode was formed in the self-organized manner for the case of In on Si(310). This was done with no anodic oxidization but In evaporation to clean Si(310) surface followed annealing in UHV.