Preparation of tera-Herty-band GaAs Schottky diode

在电化学阳极氧化过程中，均匀的铝膜可以自组织成具有小孔蜂窝状阵列的绝缘膜。本研究的主要目的是以绝缘膜为掩模制备纳米级GaAs肖特基二极管，在制备靶掩模之前，用0.5M草酸对体铝进行阳极氧化。从原子力显微镜观察，在一定条件下，小孔蜂窝状阵列明显形成。在此条件下，对GaAs衬底上的Al薄膜进行了类似的阳极氧化.因此，成功地制备了针孔的自组织蜂窝阵列，针孔的直径为30至50 nm，相邻针孔之间的距离为50至80 nm。在另一项研究的过程中，观察到纳米尺度的肖特基二极管的阵列以自组织的方式形成的情况下，在Si（310）上的In。这是在没有阳极氧化的情况下完成的，而是在UHV中退火之后蒸发In以清洁Si（310）表面。

On electrochemical anodic oxidization uniform Al thin film can be self-organized to insulating film with a honeycomb-array of pinhole. The main theme of this study is to prepare a nanometer scaled GaAs Schottky diode using the insulating film as a mask.Prior to the preparation of target mask, the anodic oxidization of bulk Al was investigated with use of 0.5 M oxalic acid. From the atomic force microscope observation the honeycomb array of pinhole was evidently formed under a certain condition. Based on the condition similar anodic oxidization was made for Al thin film on GaAs. As a result a self-organized honeycomb array of pinhole was successfully prepared with a diameter of the pinhole of 30 to 50 nm and a distance between neighboring pinholes of 50 to 80 nm.In the course of another study it is observed that an array of nanometer-scaled Schottky diode was formed in the self-organized manner for the case of In on Si(310). This was done with no anodic oxidization but In evaporation to clean Si(310) surface followed annealing in UHV.