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Development of a Heterojunction Structure Detector in the Submillimeter Wave Region

亚毫米波异质结结构探测器的研制

基本信息

批准号：
11650363
负责人：
SUZUKI Tetsu
金额：
$ 2.24万
依托单位：
Sendai National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650363/
关键词：
millimeter wave heretojunction HBT structure detector model experiment AlGaAs GaAs サブミリ波 HBT マイクロ波帯モデル実験

项目摘要

A heretojunction bipolar transistor (HBT) structure detector has been studied as a new type detector in the millimeter (MM) and submillimeter (SMM) wave region. The detector which may have much higher sensitivity compared to the Schottky Barrier Diode (SBD) in the frequency range from 100GHz to 1THz.Primarily, we have studied the heterojunction structure detector theoretically as a simulation taking into account of transit time and parasitic elements, and experimentally as a model experiment using a Si bipolar transistor in the microwave region.The video sensitivity of 5x10^5 V/W has been obtained in the low frequency range, which is much higher than that of the diode detector. And also, the sensitivity of 2x10^3 V/W is obtained even at the frequency of about 8 times higher than the cutoff frequency (ft) of the transistor. The influence of the parasitic capacitance between base and corrector is not high for detector operation, not for amplifier operation, as predicted by the theoretical simulation. The result has suggested a possibility of special design of the emitter, base, corrector structure for the SMM wave detector.We have designed the emitter base structure specially for the SMM detector and AlGaAs/GaAs semiconductor layer and impurities structure for it. And we have completed semiconductor deposition precisely using the MBE method.Now the fabrication process of the detector are improved and going on using photolithography, ECR plasma etching, and selective wet etching.

异质结双极晶体管（HBT）结构探测器是毫米波和亚毫米波波段的一种新型探测器。在100 GHz到1 THz的频率范围内，该探测器的灵敏度可能比肖特基势垒二极管（SBD）高得多。首先，我们从理论上对异质结结构探测器进行了模拟研究，考虑了渡越时间和寄生元件，在微波区用硅双极晶体管作模型实验，在低频范围内获得了5 × 10^5V/W的视频灵敏度，其比二极管检测器的高得多。而且，即使在比晶体管的截止频率（ft）高约8倍的频率下，也获得2 × 10^3 V/W的灵敏度。基极和校正器之间的寄生电容的影响是不高的检测器的操作，而不是放大器的操作，由理论模拟预测。研究结果表明，对SMM波探测器的发射极、基极、校正器结构进行特殊设计是可能的。我们设计了SMM探测器的发射极基极结构和AlGaAs/GaAs半导体层及其杂质结构，并采用分子束外延（MBE）方法精确地完成了半导体淀积。现在，我们改进了探测器的制作工艺，并继续采用光刻技术，ECR等离子体蚀刻和选择性湿法蚀刻。