IMPROVEMENT OF WETTING BEHAVIORS BETWEEN METAL AND CERAMICS BY USING INTERFACIAL SCIENCE
利用界面科学改善金属和陶瓷之间的润湿行为
基本信息
- 批准号:11650701
- 负责人:
- 金额:$ 1.09万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2000
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Wetting behaviors are an important and physical phenomena relating to various fields. Particularlv, it is important that electronic ceramics is wetted by an electrode metal in order to let the electronic ceramics perform their functions through the electrode on the electronic material. The field, however, is seemed to be s strongly based on people's experiences and no scientific view points, and the situations have not been changed as of today. Oxygen partial pressure is paid attention for effects of atmosphere to be reported on it. On the other hand, the requirement for non-wetting is seen sometime. Non- wetting material should be developed for the material of hopper in which melted iron flows, for instances. In microscopic field, the wetting behaviors for coating on particle by metal or ceramics is required.Based on these backgrounds, I focused on the interfaces between ceramic and metal , and considered wetting behaviors as microscopic phenomena and discussed with electronic stand points. One of methods was analysis of the interfaces by a computer simulation. The results by the simulation were related to the contact angles in experiments indicating wetting behaviors directly.(1) the surface oxygen gives and takes electrons with a metal atom placed on the ceramics in the case of oxide substrate.(2) Bond orders between metal and oxygen indicating the bonding strength presented larger values in Ag and Cu than those in the cases of Al and Sn. And the bond orders of Ti-Metal were also larger values in Ag and Sn as compared to Al and Sn.(3) In experiments, the contact angles of Ag and Cu were about 90゜ and about 130゜ in case of Al and Sn. As results, wetting behaviors were found to be relating to the electron transferring between a metal atom and an atom in substrate.
润湿行为是一种重要的物理现象,涉及到各个领域.特别地,重要的是电子陶瓷被电极金属润湿,以便使电子陶瓷通过电子材料上的电极执行它们的功能。然而,这一领域似乎是强烈的基于人们的经验,没有科学的观点,这种情况至今没有改变。氧分压的研究主要是为了报告大气对氧分压的影响,另一方面,有时也会考虑对非润湿性的要求。例如,铁水在其中流动的料斗的材料应开发非润湿材料。在微观领域,需要研究金属或陶瓷涂层在颗粒表面的润湿行为,基于这些背景,本文以陶瓷与金属界面为研究对象,将润湿行为视为微观现象,从电子学的角度进行讨论。方法之一是通过计算机模拟分析界面。模拟结果与直接表征润湿行为的接触角实验结果相关联。(1)在氧化物衬底的情况下,表面氧与置于陶瓷上的金属原子给予和获取电子。(2)金属和氧之间的键级表示的结合强度呈现较大的值在Ag和Cu比那些在Al和Sn的情况下。与Al和Sn相比,Ti-金属在Ag和Sn中的键级也较大。(3)在实验中,Ag和Cu的接触角约为90 °,在Al和Sn的情况下约为130 °。结果表明,润湿行为与金属原子与基体原子之间的电子转移有关。
项目成果
期刊论文数量(19)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.Sugihara,H.Katanahara,T.Isobe: "Wetting properties and electronic structures at the interfaces between electronic ceramics and electrode metal"DV-Xα研究会会報. Vol.13No.1. 80-83 (2000)
S.Sugihara、H.Katanahara、T.Isobe:“电子陶瓷和电极金属之间界面的润湿特性和电子结构”DV-Xα 研究组通报第 13 卷第 13 期(2000 年)。
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刀原寛孝: "DV-Xα法による珪化鉄熱電半導体のゼーベック係数へのアプローチ"DV-Xα研究会会報. 13. 51-53 (2000)
Hirotaka Tohara:“使用 DV-Xα 方法计算铁硅化物热电半导体的塞贝克系数”DV-Xα 研究组公告。13. 51-53 (2000)
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S.Hirano, S.J.L.Kang, J.Nowotny, R.C.Smart, C.Sorrell, S.Sugihara, T.Taniguchi, M.Yamawaki, H.Yoo: "Development of Novel Materials for Reduction of Greenhouse Gases and Environmental Monitoring Through Interface Engineering"Korean Journal of Materials Res
S.Hirano、S.J.L.Kang、J.Nowotny、R.C.Smart、C.Sorrell、S.Sugihara、T.Taniguchi、M.Yamawaki、H.Yoo:“通过界面工程开发用于减少温室气体和环境监测的新型材料
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- 影响因子:0
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S.Sugihara,M.Fujita,A.Hosoya,I.Yonekura and R.Sekine: "Microwave Ceramics from Antiferro electronics and their Electronic Ceramics"Key Engineering Materials. 169〜170. 15-18 (1999)
S.Sugihara、M.Fujita、A.Hosoya、I.Yonekura 和 R.Sekine:“来自反铁电子学的微波陶瓷及其电子陶瓷”关键工程材料 169〜170 (1999)。
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- 影响因子:0
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M.Fujita, R.Sekine, S.Sugihara: "Dielectric Property Change of Ferroelectrics and Electronic Structures"Jpn.J.Appl.Phys.. Vol.38. 5664 (1999)
M.Fujita、R.Sekine、S.Sugihara:“铁电体和电子结构的介电性能变化”Jpn.J.Appl.Phys.. Vol.38。
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