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Microfabrication of Semiconductor Surface by Photoelectrochemical Etching Technique

Microfabrication of Semiconductor Surface by Photoelectrochemical Etching Technique
光电化学刻蚀技术半导体表面微加工
批准号:
11650843
负责人:
SUGIURA Takashi
金额:
$2.24万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

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中文摘要
翻译
在硫酸溶液中对TiO_2电极进行光电化学腐蚀(光刻),得到纳米结构的表面(称为“纳米蜂窝”结构)。另一个有趣的发现是其潜在的依赖性蚀刻位点选择性,即,在弱阳极极化(向上能带弯曲)条件下,烧结颗粒TiO_2电极的颗粒体发生优先光电化学溶解,形成仅由晶界组成的“骨架”结构。后者必须提供一个可能性的表征晶界,这是众所周知的,在一些陶瓷器件中发挥着至关重要的作用。在本工作中,我们报告了更详细的表征烧结颗粒TiO_2的晶界以及“纳米蜂窝”的尺寸控制。改变光刻时间、光刻电位和光强等光刻条件并不改变“纳米蜂窝”的大小,表明其大小反映了所用TiO_2的本征性质。实际上,通过在氢气气氛中还原TiO_2,提高TiO_2电极的施主密度,可以减小“纳米蜂窝”的尺寸。对于施主密度为10 μ cm ~ 2量级的TiO_2电极<21><-3>,其尺寸为30 nm。这种精细结构的形成将在各种器件如(光)催化剂、传感器和染料敏化太阳能电池中找到有用的应用。
英文摘要
The photoelectrochemical etching (photoetching) of a TiO_2 electrode in sulfuric acid solution generates nano-structured surface (named "nano-honeycomb" structure). Another interesting finding is its potential dependent etching site selectivity, i.e., a preferential photoelectrochemical dissolution of grain bulk for a sintered pellet TiO_2 electrode under weak anodic polarization (upward band bending), which results in the formation of a "skeleton" structure consisting of only grain boundaries. The latter must offer a possibility of characterize grain boundaries, which are known to play a crucial role in some ceramic devices.In the present work, we report more detailed characterization of grain boundary of a sintered pellet TiO_2 as well as the size control of the "nano-honeycomb". Varying the photoetching conditions such as photoetching time, photoetching potential and light intensity did not change the size of a "nano-honeycomb", suggesting that its size is a reflection of the intrinsic property of the TiO_2 used. Modifying the properties of TiO_2 would change it. Actually upon increasing the donor density of a TiO_2 electrode by reducing it in H_2 atmosphere, the size of the "nano-honeycomb" decreased. For a TiO_2 electrode with a donor density of the order of 10^<21> cm^<-3>, the size amounts to 30 nm. The formation of such a fine structure will find useful applications to various devices such as (photo) catalysts, sensors and dye-sensitized solar cells.
期刊论文(6)
专著(0)
科研奖励(0)
会议论文
箕浦秀樹,杉浦隆: "ナノハニカム構造を有する酸化チタン表面の創製"表面. 38・6. 297-305 (2000)
Hideki Minoura、Takashi Sugiura:“具有纳米蜂窝结构的氧化钛表面的创建”表面38・6。
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通讯作者:
Takashi Sugiura: "Microstructual Observation of Photoelectro chemically Tailored Nano-Honeycomb TiO_2"Electrochemistry. 67・12. 1234-1236 (1999)
Takashi Sugiura:“光电化学定制纳米蜂窝TiO_2的微观结构观察”电化学67・12(1999)。
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通讯作者:
Takashi Sugiura: "Microstructual Obsevation of Photoelectrochemically Tailored Nano-Honeycomb TiO_2"Electrochemistry. 67. 1234-1236 (1999)
Takashi Sugiura:“光电化学定制纳米蜂窝TiO_2的微观结构观察”电化学。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Takashi Sugiura: "Microstructual Obsevation of Photoelectrochemically Tailored Nano-Honeycomb TiO_2"Electrochemistry. 67・12. 1234-1236 (1999)
Takashi Sugiura:“光电化学定制纳米蜂窝 TiO_2 的微观结构观察”电化学 67・12(1999)。
DOI: --
发表时间:
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作者: []
通讯作者:
New Technique for The Synthesis of GaN:ZnO Photocatalyst by The Use of Solid Nitrogen Sources
  • 批准号:
    24550232
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $3.58万
  • 财政年份:
    2012
  • 负责人:
    SUGIURA Takashi
  • 依托单位:
Formation of Nano-Porous Structures on Oxide Semiconductor Surface by Photoetching Technique
  • 批准号:
    18560653
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.27万
  • 财政年份:
    2006
  • 负责人:
    SUGIURA Takashi
  • 依托单位:
Photoelectrochemical Designing of Nano-Porous Structures on TiO_2 Electrode and its Application to Gas Sensor
  • 批准号:
    14550787
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.3万
  • 财政年份:
    2002
  • 负责人:
    SUGIURA Takashi
  • 依托单位:
SURFACE PROCCESSING OF SEMICONDUCTOR BY THE USE OF PHOTOELECTROCHEMICAL TECHNIQUE
  • 批准号:
    07650781
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $1.34万
  • 财政年份:
    1995
  • 负责人:
    SUGIURA Takashi
  • 依托单位:
海外基金