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Fabrication of microcrystalline silicon thin films for high-efficiency solar cells by using high-density hydrogen radicals

利用高密度氢自由基制备高效太阳能电池用微晶硅薄膜

基本信息

批准号：
11680503
负责人：
KAMISAKO Koichi
金额：
$ 1.34万
依托单位：
Tokyo University of Agriculture and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11680503/
关键词：
microcrystalline Si silicon thin film solar cell hydrogen-radical 結晶性

项目摘要

The purpose of this, study, is to produce microcrystalline silicon films necessary for high-efficiency thin film solar cells. As deposition method, we used a hydrogen radical CVD, method in which hydrogen radicals react with silane molecules as well as affect the growing surface of films. We tried to control structure of microcrystalline silicon films by examining the growing process of thin films.First, to reveal the characteristic of the hydrogen radical CVD method, deposition rate, crystallinity and electrical properties of silicon films were investigated using SiH_4 and Si_2H_6 as a function of gas pressure and hydrogen dilution. As a result, film properties. Could be changed from amorphous to microcrystalline by these experimental parameters.Secondly, dependences of film properties on substrate temperature (200-350℃) and film thickness (100-lOOOnm) were examined. It was shown that at higher temperature crystallization starts at a faster stage and that in thicker films the electrical conductivity is more affected by the characteristic of amorphous phase.Thirdly, effect of lower layer on upper layer' properties was examined by forming a double layer structure with a P-doped layer on an undoped layer. Consequently, the crystallinity and electrical conductivity of top layer depended clearly on the surface configuration of bottom layer.electrical conductivity of deposited silicon films were affected by first-step deposition conditions even if second-step deposition conditions were fixed. This result indicates that film properties can be controlled well by two-step deposition. Moreover, film structure was found to depend on both film thicknesses of bottom and top layers.

本研究的目的是生产高效率薄膜太阳能电池所需的微晶硅薄膜。作为沉积方法，我们使用氢自由基CVD，其中氢自由基与硅烷分子反应并影响薄膜生长表面的方法。为了揭示氢自由基化学气相沉积法的特点，本文首先以SiH_4和Si_2H_6为原料，研究了不同气压和不同氢稀释度下硅薄膜的沉积速率、结晶度和电学性能。因此，薄膜性能。其次，研究了衬底温度（200-350℃）和薄膜厚度（100- 1000 nm）对薄膜性能的影响。结果表明，在较高温度下，晶化开始较快，在较厚的薄膜中，电导率受非晶相特性的影响较大。第三，通过在未掺杂层上形成P掺杂层的双层结构，研究了下层对上层性质的影响。因此，顶层的结晶度和电导率明显依赖于底层的表面结构，即使第二步沉积条件固定，第一步沉积条件也会影响沉积硅膜的电导率。这一结果表明，薄膜性能可以很好地控制两步沉积。此外，膜结构被发现取决于底层和顶层的膜厚度。