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Simultaneous Observation of Surface Processes under Exited Gas Phase Atmosphere Using Ion and Light Probes

使用离子和光探针同时观察退出气相气氛下的表面过程

基本信息

批准号：
12305005
负责人：
KATAYAMA Mitsuhiro
金额：
$ 27.06万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12305005/
关键词：
surface processes under exited gas phase atmosphere low-energy ion scattering and recoiling spectroscopy attenuated total reflection infrared spectroscopy surface hydrogen hydrogen-surfactant strain engineering growth morphology surface nitr

项目摘要

Thin film growth or etching in exited gas phase atmosphere is often performed as a surface process in various device fabrication procedures, where chemical vapor deposition (CVD) or gas source molecular beam epitaxy (GSMBE) is typically adopted. Although the interaction of gas phase particles (atoms, molecules, ions, plasma) with the surface of materials is a key process in such types of fabrication, its atomic-scale mechanism is not fully elucidated. This is in part due to the lack of appropriate surface analytical techniques feasible in exited gas phase atmosphere.Ion scattering and recoiling spectroscopy (CAICISS/TOF-ERDA) with ions and attenuated total reflection infrared spectroscopy (ATR-FTIR) with light have proven to be useful in in situ monitoring of surface processes, in particular, for the determination of the amount of surface hydrogen atoms. In this project, we have developed a novel method for simultaneous observation of surface processes under exited gas phase atmosphere using ion and light probes.The most significant result of its application is the elucidation of the growth process of Ge/Si(001) hydrogen-surfactant-mediated heteroepitaxy, in which exited atomic hydrogen is dynamically supplied to the growth front as a surfactant. It has been revealed that in the hydrogen-surfactant-mediated heteroepitaxy, (1) a submonolayer of H atoms readily acts as a surfactant, and (2) beyond an optimal H coverage, surface roughening occurs even though a monohydride phase is maintained at the growth front.

在各种器件制造过程中，在退出的气相气氛中的薄膜生长或蚀刻通常作为表面工艺来执行，其中通常采用化学气相沉积（CVD）或气体源分子束外延（GSMBE）。虽然气相粒子（原子、分子、离子、等离子体）与材料表面的相互作用是此类制造中的关键过程，但其原子尺度机制尚未完全阐明。这在一定程度上是由于缺乏适当的表面分析技术可行的退出气相atmos.Ion散射和反冲光谱（CAICISS/TOF-ERDA）与离子和衰减全反射红外光谱（ATR-FTIR）与光已被证明是有用的表面过程的原位监测，特别是，用于测定表面氢原子的量。在本计画中，我们发展了一种利用离子探针与光探针同时观测激发气相气氛下表面过程的新方法，其最重要的应用结果是阐明了Ge/Si（001）氢-表面活性剂介导异质外延的生长过程，其中激发原子氢作为表面活性剂被动态地提供给生长前沿。已经揭示，在氢-表面活性剂介导的异质外延中，（1）H原子的亚单层容易地充当表面活性剂，以及（2）超出最佳H覆盖，即使在生长前沿保持单氢化物相，也会发生表面粗糙化。