Fabrication of spin-injection transistor and its application to quantum computing devices

我们已经在InAs量子良好结构中验证了较大的自旋轨道耦合，其中通过分析Shubnikov-de Haas振荡在InAs基础上生长。obtained spin-orbit interaction coefficient was [similar or equal] 2.7 x10 ^\-11>eVm。在InP上发现的GaAs或InGaAs的数目要大得多，而且几乎可以与先前的实验相比，在测量的地方，不同结构与接口状态或可能的替代性约束或几个可能的子的可能影响有关。The present result verified that these possible effects has minor effects and anisotropic InAs heterostructures have unusually large spin-orbit coupling which cannot be explained by simple perturbation theories such as k. p calculation.我们还发现了一个新的方法of evaluating "spin-gap" caused by spin-orbit interactions through interband tunneling current analysis.As for the "spin-in-injection" from ferromagnetic film into semiconductors，we have investigated the crystal Fe growth on InAs by molecular beam epitaxy and electromagnetic characteristics of the ferromagnetic firm and stripes grown on InAs。我们还对从铁氧体和半导体之间的无屏障连接的无屏障连接的第一份报告进行了调查，并通过[类似或相等]的极化进行了验证的自旋注入是可能的，如果是4%，则是第一份报告中的铁氧体和半导体之间的无屏障连接的报告，也有一份可靠实验报告的数量最高的数字。

We have verified large spin-orbit coupling in InAs quantum well structure which was grown on InAs substrate by analyzing Shubnikov-de Haas oscillation. The obtained spin-orbit interaction coefficient was 【similar or equal】 2.7x10^<-11>eVm. The number was found to be much greater than that of GaAs or InGaAs on InP and almost comparable to the previous experiments where measured InAs heterostructures were associated with possible effects from interface states or possible residual strain or possible interplay of several sublevels. The present result verified that these possible effects has minor effects and anisotropic InAs heterostructures have unusually large spin-orbit coupling which cannot be explained by simple perturbation theories such as k・p calculation.We have also discovered a new method of evaluating "spin-gap" caused by spin-orbit interactions through interband tunneling current analysis.As for the "spin-injection" from ferromagnetic film into semiconductors, we have investigated the crystal Fe growth on InAs by molecular beam epitaxy and electromagnetic characteristics of the ferromagnetic firm and stripes grown on InAs. We have also investigated the electroluminescence of spin polarized electrons injected from ferromagnets into InAs therough Fe/InAs junction, and verified spin injection is possible with polarization of 【similar or equal】 4 % which is the first report with barrierless junction between ferromagnet and semiconductor and even one of the highest number reported by reliable experiments.