Fabrication of spin-injection transistor and its application to quantum computing devices

我们已verified large spin-orbit coupling in InAs quantum well structure which was grown on InAssubstrate by analyzing Shubnikov-de Haas oscillation. The obtained spin-orbit interactioncoefficient was【similar or equal】2.7x10^<-11>eVm. The number was found to be much greater thanGaAs or InGaAs on InP and almost comparable to the previous experiments where measured InAsheterostructures associated with possible effects from interface states or possible residualstrain or possible interplay of several sublevels. present result verified that these possibleeffects has minor effects and anisotropic InAs heterostructures have unusually large spin-orbitcoupling which cannot be explained by simple perturbation theories such as kp calculation.We havealso discovered a new method of evaluating "spin-gap" caused by spin-orbit interactions throughinterband tunneling current analisis . as for the "spin-injection" from ferromagnetic film intosemiconductors,我们已经投资了molecular beam epitaxy and electromagnetic the crystal Fe growth on InAscharacteristics of the ferromagnetic firm and stripes grown on InAs.我们已经做了一些研究electroluminescence of spin polarized electrons injected from ferromagnets into InAs theroughfe / inas junction,and verified spin injection is possible with polarization of【similar or equal】4% which is the第一份报告与barrierless junction between ferromagnet and semiconductor and even one of thehighest number reported by reliable experiments

We have verified large spin-orbit coupling in InAs quantum well structure which was grown on InAs substrate by analyzing Shubnikov-de Haas oscillation. The obtained spin-orbit interaction coefficient was 【similar or equal】 2.7x10^<-11>eVm. The number was found to be much greater than that of GaAs or InGaAs on InP and almost comparable to the previous experiments where measured InAs heterostructures were associated with possible effects from interface states or possible residual strain or possible interplay of several sublevels. The present result verified that these possible effects has minor effects and anisotropic InAs heterostructures have unusually large spin-orbit coupling which cannot be explained by simple perturbation theories such as k・p calculation.We have also discovered a new method of evaluating "spin-gap" caused by spin-orbit interactions through interband tunneling current analysis.As for the "spin-injection" from ferromagnetic film into semiconductors, we have investigated the crystal Fe growth on InAs by molecular beam epitaxy and electromagnetic characteristics of the ferromagnetic firm and stripes grown on InAs. We have also investigated the electroluminescence of spin polarized electrons injected from ferromagnets into InAs therough Fe/InAs junction, and verified spin injection is possible with polarization of 【similar or equal】 4 % which is the first report with barrierless junction between ferromagnet and semiconductor and even one of the highest number reported by reliable experiments.