权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Development of GHz-Drive Magnetic Thin Film Inductors for Integrated Circuits

用于集成电路的 GHz 驱动磁性薄膜电感器的开发

基本信息

批准号：
12305025
负责人：
YAMAGUCHI Masahiro
金额：
$ 28.44万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

A new GHz-band permeameter has been developed to find out the CoNbZr, FeAlO and (CoFeB)SiO_2 Thin-film materials as the possible candidates for GHz-drive inductors. A new technique on raise the ferromagnetic resonance (FMR) frequency has also been developed; Microfabricate narrow slits along the easy axis of magnetization and apply RE magnetic field along the hard axis. Then magnetic losses at 2GHz can be negligible through the optimum slit design method we established.An integrated spiral inductor with 0.1-1.0μm-thick silted CoNbZr film on the top exhibited L=8nH and Q=5 at 2GHz, Its size was 330x330μm^2. Provided that the silted CoNbZr magnetic film are installed below and on the spiral (sandwich type inductor), L=7.9nH and Q=13 has been achieved is the 200x400μm^2 size. This is worth achieving main objective of this work.An RE magnetic near field probe has been developed to analyze leakage flux from the integrated inductor to semiconductor circuit. The probe exhibited world-highest spatial resolution of 40μm at 1GHz. It is estimated that the electromagnetic interference to the integrated circuit would be negligible.An extensive application of integrated ferromagnetic film has been proposed to suppress RF in-line electromagnetic noise by means of FMR losses. Insertion loss at 1GHz was only 0.4dB while is reached 15dB as 20GHz.Thus this work has been concluded, showing a practical possibility of ferromagnetic integrated inductors as well as to pioneering a new technology field of "soft magnetic applications in the GHz range for IT." The first and second international symposium on "High Frequency Micromagnetic Devices and Materials" has been initiated by the investigators.

为了找出CoNbZr， FeAlO和（CoFeB）SiO_2薄膜材料作为ghz驱动电感的可能候选材料，开发了一种新的ghz波段磁导仪。提高铁磁共振（FMR）频率的新技术也得到了发展；沿易磁化轴微加工窄狭缝，沿硬轴施加稀土磁场。通过建立的最佳狭缝设计方法，可以忽略2GHz的磁损耗。顶部有0.1 ~ 1.0μm厚的CoNbZr沉积膜的集成式螺旋电感，在2GHz时L=8nH， Q=5，尺寸为330x330μm^2。将堆积的CoNbZr磁膜安装在螺旋（夹层式电感）的下方和上方，得到的L=7.9nH， Q=13为200x400μm^2尺寸。这是值得实现的主要目标。研制了一种用于分析集成电感到半导体电路漏磁的稀土近场探头。该探针在1GHz下的空间分辨率为40μm，是世界上最高的。据估计，对集成电路的电磁干扰可以忽略不计。提出了集成铁磁薄膜在利用FMR损耗抑制射频在线电磁噪声方面的广泛应用。1GHz时的插入损耗仅为0.4dB， 20GHz时达到15dB。因此，这项工作已经结束，显示了铁磁集成电感器的实际可能性，并开创了“在GHz范围内用于IT的软磁应用”的新技术领域。第一届和第二届“高频微磁器件与材料”国际研讨会已由研究人员发起。