Growth of new transparent conducting materials, gallium oxide single crystals, and their carrier doping

采用提拉法(Cz)、提拉法(μ-Dull Down，μ-Pd)和浮动区法(FZ)等三种生长技术，对(Ga_&lt；1-x&gt；W_x)_2O_3、(Ga_&lt；1-x&gt；Mo_x)_2O_3、(Ga_&lt；1-x&gt；1-x&gt；Mo_x)_2O_3、(Ga_&lt；1-x&gt；W_x)_2O_3、(Ga_&lt；1-x&gt；W_x)_2O_3、(Ga_&lt；1-x&gt；1-x&gt；生长了(Ge_X)_2O_3，(Ga_&lt；1-x&gt；Hf_x)_2O_3，(Ga_&lt；1-x&gt；Zr_x)_2O_3，并研究了它们的电学和光学性质。同时，以热处理为手段对生长的晶体进行了缺氧化处理，实现了n型半导体Ga2O3单晶。我们的研究成果总结如下：1.建立了用Cz法生长掺杂Ga_2O_3单晶的工艺。对于所生长的单晶的电学性质和光学性质，分别清楚地揭示了n型半导体和蓝光发光的特征。建立了用μ-Pd法生长掺杂氧化镓单晶的工艺。对于所生长的单晶的电学和光学性质，分别清楚地揭示了n型半导体和蓝光发光的特征。建立了用FZ法生长掺杂氧化镓单晶的工艺。对于所生长的单晶的电学和光学性质，分别清楚地揭示了n型半导体和蓝光发光的特征。对于Cz法、μ-Pd法和FZ法生长的晶体，通过优化混合气体(氧气和氮气)的分压和热处理温度，改善了晶体的n型半导体性能，使晶体具有适当的缺氧性。

In this study, we established all technologies and made database all research results, which can be referred widely as basic technological knowledge.By three growth technologies such as Czochralski (Cz), μ-Pulling Down (μ-PD) and Floating Zone (Fz) methods, various doped Ga_2O_3 single crystals such as (Ga_<1-x>W_x)_2O_3, (Ga_<1-x>Mo_x)_2O_3, (Ga_<1-x>Ge_x)_2O_3, (Ga_<1-x>Hf_x)_2O_3, (Ga_<1-x>Zr_x)_2O_3 were grown and their electrical and optical properties were investigated. Also, by using thermal treatment as a tool to make a oxygen deficiency for the grown crystals, Ga_2O_3 single crystals of n-type semiconducting was realized. We summarize the research results as follows:1. We established a technology to grow doped Ga_2O_3 single crystals by Cz method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.2. We established a technology to grow doped Ga_2O_3 single crystals by μ-PD method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.3. We established a technology to grow doped Ga_2O_3 single crystals by Fz method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.4. For the grown crystals by Cz, μ-PD, and Fz methods, the n-type semiconducting property was improved by optimizing partial pressure of mixture gas (oxygen and nitrogen) and thermal treatment temperature so that the crystals are of proper oxygen-deficiency.