Study on Heat and Mass Transfer in the Magnetic Fields Applied Czochralski Method
磁场中传热传质应用直拉法研究
基本信息
- 批准号:02452143
- 负责人:
- 金额:$ 3.78万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1990
- 资助国家:日本
- 起止时间:1990 至 1991
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
1. Effects of applied magnetic field on convection in melt :Temperature distributions on the melt surface under the conditions with or without magnetic fields were observed by the thermoviewer system. As increasing strength of the applied magnetic field, dominant heat transfer in the melt changed from convective transfer to conductive one. A remote sensing system for convective phenomena under the applied magnetic field conditions was developed. We successfully estimated very weak convection, which could not be observed on the melt surface, by using this method.2. Control of mass transfer by applied magnetic field :A mechanism of oxygen transfer during silicon crystal growth by Czochralski method was clarified. A new magnetic field applied system, Cusp magnetic field, was developed and applied to silicon crystal growth by Czochralski method. We could control the oxygen concentration in the grown crystal with uniform distribution of oxygen along the growth direction and in the wafer.3. Development of strong magnetic field applied system :A vertical Bridgeman with strong magnetic field up to 80, 000 Gauss available was developed.
1. 外加磁场对熔体对流的影响:用测热仪系统观察了有磁场和无磁场条件下熔体表面的温度分布。随着外加磁场强度的增大,熔体中主要的换热由对流换热转变为导电换热。研制了外加磁场条件下对流现象遥感系统。利用该方法,我们成功地估计了熔体表面无法观测到的极弱对流。外加磁场对传质的控制:阐明了用Czochralski法生长硅晶体过程中氧传递的机理。提出了一种新的磁场应用系统——尖磁场,并将其应用于硅晶体生长。我们可以控制生长晶体中的氧浓度,使氧沿生长方向和晶圆内均匀分布。强磁场应用系统的研制:研制了一种具有80000高斯强磁场的立式桥桥机。
项目成果
期刊论文数量(18)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.Kan,M.Sakamoto,Y.Okano T.Fukuda,J Sato,T.Tsukada H.Hozawa and N.Imaishi: "Characteristics of Thermal Field in LiNbO_3 Single Crystal Grown by the Czochralski Method" J.Crystal Growth.
S.Kan,M.Sakamoto,Y.Okano T.Fukuda,J Sato,Tsukada H.Hozawa和N.Imaishi:“直拉法生长的LiNbO_3单晶的热场特征”J.Crystal Growth。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
M.Amano,K.Kumoyama,M.Kasuga,Y.Okano,H.Hoshkawa and T.Fukuda: "Remote Sensing of Induced Current in Conductor Moving in Magnetic Field" J.Crystal Growth.
M.Amano、K.Kumoyama、M.Kasuga、Y.Okano、H.Hoshkawa 和 T.Fukuda:“磁场中运动导体感应电流的遥感”J.晶体生长。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H. Hirata and K. Hoshikawa: "Three-Dimensional Numerical Analysis of the Effect of a Cusp Magnetic Field on the Flow, Oxygen Transport and Heat Transfer in a Czochralski Silicon Melt" J. Crystal Growth.
H. Hirata 和 K. Hoshikawa:“尖点磁场对直拉硅熔体中流动、氧传输和传热影响的三维数值分析”J. 晶体生长。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
S.Kan,M.Sakamoto,Y.Okano,T.Fukuda,J Sato,T.Tsukada,H.Hozawa and N.Imaishi: "Characteristics of Thermal Field in LiNbO_3 Single Crystal Grown by the Czochralski Method" J.Crystal Growth.
S.Kan,M.Sakamoto,Y.Okano,T.Fukuda,J Sato,Tsukada,H.Hozawa和N.Imaishi:“直拉法生长的LiNbO_3单晶的热场特征” J.Crystal Growth
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Yasumori Okano: "Numerical study on Czochralski growth of oxide crystals." J.Crystal Growth. 109. 94-98 (1991)
Yasumori Okano:“氧化物晶体直拉法生长的数值研究。”
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
FUKUDA Tsuguo其他文献
FUKUDA Tsuguo的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('FUKUDA Tsuguo', 18)}}的其他基金
Growth of new transparent conducting materials, gallium oxide single crystals, and their carrier doping
新型透明导电材料氧化镓单晶的生长及其载流子掺杂
- 批准号:
12650001 - 财政年份:2000
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of new fluoride single crystals as VUV window materials for next-generation optical lighography
开发新型氟化物单晶作为下一代光学光刻的 VUV 窗口材料
- 批准号:
12555001 - 财政年份:2000
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
New AィイD23ィエD2BCィイD23ィエD2DィイD22ィエD2OィイD214ィエD2-type single crystal materials for piezoelectric applications
用于压电应用的新型 AD23D2BCD23D2D22D2OD214D2 型单晶材料
- 批准号:
10650301 - 财政年份:1998
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of high-strength fiber for ultra high-temperature application by fast directional solidification method : control of microstructure
通过快速定向凝固法开发用于超高温应用的高强度纤维:微观结构的控制
- 批准号:
10555254 - 财政年份:1998
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
STUDY OF HEAT AND MASS TRANSPORT PHENOMENA IN CRYSTAL GROWTH
晶体生长中的传热和传质现象的研究
- 批准号:
09044123 - 财政年份:1997
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for international Scientific Research
Investigation of KLN single crystals grown by micro-pulling-down method for blue SHG applications
研究微下拉法生长的 KLN 单晶用于蓝色倍频光的应用
- 批准号:
07555096 - 财政年份:1995
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Investigation on practical use of disordered type new laser crystals
无序型新型激光晶体实用化研究
- 批准号:
05555001 - 财政年份:1993
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
相似海外基金
Development of reactive Czochralski method for nitride crystal growth
氮化物晶体生长反应直拉法的发展
- 批准号:
20K21071 - 财政年份:2020
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for Challenging Research (Exploratory)
Model Experiment and Numerical Simulation on Czochralski Method
直拉法模型实验与数值模拟
- 批准号:
08650224 - 财政年份:1996
- 资助金额:
$ 3.78万 - 项目类别:
Grant-in-Aid for Scientific Research (C)