Frustration between Ferro- and Antiferro-Electricity and its Application to Liquid Crystal Displays

铁电和反铁电之间的挫败及其在液晶显示器中的应用

• 批准号: 12650010
• 负责人: FUKUDA Atsuo
• 金额: $ 2.11万
• 依托单位: Shinshu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650010/
• 关键词: liquid crystal; antiferroelectricity; ferroelectricity; V-shaped switching; subphase; Sm-C_α; Casimir force; biaxial anchoring; 競合誘電性; ANNNIモデル

The V-shaped switching has attracted attention because of its potential applications to fast-response AM-LCDs. Two companies have developed a group of materials, which are closely related to the prototyped antiferroelectric liquid crystals. This research aims at understanding what are essential to the emergence of the practically usable V-shaped switching. Two essentials are: ( 1 ) the frustration between ferro- and antiferro-electricity, and ( 2 ) the "biaxial anchoring", i.e. a tendency that the more easily polarizable short axis (intuitively, the averaged direction of phenyl ring planes) is liable to become rather perpendicular than parallel to the substrate plates. Since it is parallel to the tilt plane in the V-shaped switching materials, the melatopes may emerge parallel to an electric field even in ferroelectric SmC*, and the biaxial anchoring on polyimide aligning films plays an important role, destabilizing the SS states; the total anchoring becomes almost independent of the a … More zimuthal angle specifying the position on the SmC* tilt cone. The relatively weak anchoring due to rubbing must force to align directors. When the chiral twisting power is large, the distribution around the rubbing direction may become broad. The first essential, i.e. the frustration assures the extreme softness with respect to the tilting direction and hence the hysteresis-free characteristics by easily forming invisible microdomains in the whole switching range. The biaxial anchoring may destroy the antiferroelectric SmC_A* structure. The local director shows a variety of orientational distributions at the tip of the V; neither Langevin-like reotientation nor highly collective azimuthal angle rotation of in-layer directors is essential to the V-shaped switching. Extremely large spontaneous polarization and the resultant polarization charge stiffening of the orientation field is not necessary. Any twisting structure of the smectic layer as well as the director caused by interface effects rather degrades the practical performance of the V-shaped switching. Less

V型开关由于其在快速响应AM-LCD中的潜在应用而引起人们的关注。两家公司已经开发出一组与原型反铁电液晶密切相关的材料。本研究的目的是了解什么是必不可少的出现的实际可用的V形开关。两个要点是：（1）铁电性和反铁电性之间的阻碍，以及（2）“双轴锚定”，即更容易极化的短轴（直观地，苯环平面的平均方向）倾向于变得垂直于而不是平行于基板的趋势。在V型开关材料中，由于它平行于倾斜平面，所以即使在铁电SmC* 中，熔化位也可以平行于电场出现，并且聚酰亚胺取向膜上的双轴锚定起着重要作用，使SS态不稳定;总锚定变得几乎不依赖于电场。 ...更多信息 方位角指定SmC* 倾斜锥上的位置。摩擦导致的相对弱的锚定必须迫使指向矢对齐。当手征扭转力大时，围绕摩擦方向的分布可能变宽。第一个要素，即挫折，通过在整个开关范围内容易地形成不可见的微区，确保了相对于倾斜方向的极端柔软性，并因此确保了无弯曲的特性。双轴锚定可能破坏反铁电SmC_A* 结构。本地导演显示各种取向分布在V的尖端，既不是郎之万的reotientation，也不是高度集体的方位角旋转层董事是必不可少的V形开关。极大的自发极化和由此产生的极化电荷硬化的取向场是不必要的。近晶层的任何扭曲结构以及由界面效应引起的指向矢反而降低了V形开关的实际性能。少

项目成果

M.Oshipov 他1名: "Molecular model for the anticlinic smectic-C_A phase"Phys.Rev.E. 62. 3724-3735 (2000)

M.Oshipov 等人：“反斜近晶 C_A 相的分子模型”Phys.Rev.E 62. 3724-3735 (2000)

M.Takeuchi 他5名: "V-shaped switching due to frustoelectricity in antiferroelectric liquid crystals"Ferroelectrics. 246. 1-20 (2000)

M.Takeuchi 等 5 人：“反铁电液晶中截电性引起的 V 形开关”Ferroelectrics 246. 1-20 (2000)。

Osipov,M.A. and Fukuda,A.: "Molecular Model for the Anticlinic Smectic-C_A Phase"Phys. Rev. E.. 62 [ 3 ]. 3724-3735 (2000)

奥西波夫，文学硕士

Fukuda,A., Hakoi,H., Okugawa,T., Ando,T., Matsumoto,T., Suzuki,Y., Johno,M., Hayashi,N., Kato,T., Kawada,S. and Kondoh,S.: "Understanding and Optimization of V-Shaped Switching Due to Frustration between Ferro- and Antiferro-Electricity in Smectic Liquid

福田，A.，箱井，H.，奥川，T.，安藤，T.，松本，T.，铃木，Y.，乔野，M.，林，N.，加藤，T.，川田，S。

P.V.Dolganov他2名: "Structural Transitions in Thin Free-Standing Films of an Antiferroelectric Liquid Crystal Exhibiting the SmC_α^* Phase in the Bulk Sample"Phys. Rev. E. (印刷中). (2002)

P.V.Dolganov 等人 2：“在散装样品中表现出 SmC_α^* 相的自立式反铁电薄膜的结构转变”Phys Rev. E.（出版中）。