PREPARATION OF ULTRA LOW-K MATERIAL BY CHEMICAL VAPOR DEPOSITION METHOD.

化学气相沉积法制备超低K材料。

• 批准号: 12650022
• 负责人: UCHIDA Yasutaka
• 金额: $ 2.3万
• 依托单位: TEIKYO UNIVERSITY OF SClENCE AND TECHNOLOOY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650022/
• 关键词: low-k; porous silica; CVD; 2-Methylpentane-2,4-diol; X-ray total reflectance; porosity; GIXA; 多孔質; FTIR; ポーラスシリカ膜; TICS; TMA; 層間絶縁膜

Porous silica films with a low dielectric constant, k, have been prepared from the gas phase using a mixture of Si(NCO)_4, N(CH_3)_3 and (C_6H_5)_2Si(N(CH_3)_2)_2. After desorption of phenyl groups chemically bonded with Si in the as-deposited film, the film showed a porosity of 48%, and k as low as 2.5. Low-field resistivity and break down field strength were about 10^<15> Ωcm, and 1.3MV/cm due to pinhals, respectively.Based on these results, importance of an Alkylene incorporated porous silica film I have been pointed out and demonstrated the film prepared by using hydrolysis and condensation of BIS(Triethoxysilyl)Ethelene (BTE). BTE and H_2O contained with HCl as a catalyst were mixture with organic solvent, 2-Methylpentane-2,4-diol (MPD). FT-IR peaks due to MPD were not observed but Si-C_2H_4-Si related peaks were still observed in the film even after 450℃ vacuum annealing. Electric characteristics were evaluated with an MOS structure. K value was not depended on the annealing temperature below 400℃, however, it was reduced down to 1.9 at 450℃. In order to confirm the density of the film X-ray total reflectance and GIXA measurement have applied to the films. The density of the film after vacuum annealing at 450℃ was 1.2g/cm^3 and porosity was 52%. The low-k film have inter mediate layers at surface the film and interface between low-k film and substrate.I have also tried to form new structure films incorporated with CF bonds which have good thermal and plasma tolerance. In order to form CF incorporated film, following things became clear. Bis(trichlorosilyl)acetylene [BTA] should be react with methyl groups and then hydrolysis and condensation applied to the BTA.

用Si(NCO)_4、N(CH_3)_3和(C_6H_5)_2Si(N(CH_3)_2)_2的混合物从气相中制备了具有低介电常数k的多孔SiO_2薄膜。对薄膜中与Si化学键合的苯基进行脱附后，薄膜的孔隙率为48%，k低至2.5。低场电阻率和击穿场强分别约为10lt；15Ωcm和1.3 mV/cm。基于这些结果，指出了亚烷基多孔二氧化硅薄膜的重要性，并论证了用双(三乙氧基硅基)乙烯(BTe)的水解和缩合制备的薄膜。以盐酸为催化剂，BTE和H2O与有机溶剂2-甲基戊烷-2，4-二醇(MPD)混合。未观察到MPD引起的FT-IR峰，但即使在450℃真空退火后，仍能观察到与Si-C2H4-Si相关的峰。采用MOS结构对其电学特性进行了评价。K值不受400℃以下温度的影响，但在450℃时，K值下降到1.9。为了确定薄膜的致密性，对薄膜进行了X射线全反射和GIXA测量。经450℃真空退火后的薄膜密度为1.2g/cm~3，气孔率为52%。Low-k薄膜在薄膜表面、薄膜和基片之间都有中间层，并尝试形成具有良好耐热和耐等离子体性能的CF键结合的新结构薄膜。为了形成CF复合膜，下面的事情变得清晰起来。二(三氯硅基)乙炔[BTA]应与甲基反应，然后对BTA进行水解和缩合。

项目成果

Y. Uchida: "Optimization of Low-k Porous Silica Films Incorporated with Alkylene Groups."Europe Mat. Res. Conf.. (2002)

Y. Uchida：“掺有亚烷基的低 k 多孔二氧化硅薄膜的优化。”Europe Mat。

Y.UCHIDA: "Preparation of Low-K Films Incorporated with Alkylene groups"Proc. of 8th Int'l. DCMIC. 57-64 (2002)

Y.UCHIDA：“掺有亚烷基的低 K 薄膜的制备”Proc。

Y.UCHIDA: "Optimization of Low-K Porous Silica Films Incorporated with Alkylene Groups"Proc. of E-MRS. (2002)

Y.UCHIDA：“掺有亚烷基的低 K 多孔二氧化硅薄膜的优化”Proc。

加藤隆史: "SOG法によるメチレン基含有シリカ膜の形成"第61回応用物理学会学術講演会講演予稿集. No.2. 4a-P4-25 (2000)

加藤隆：“通过SOG法形成含亚甲基的二氧化硅膜”第61届日本应用物理学会年会论文集No.2.4a-P4-25(2000)。

Y.UCHIDA: "Chemical Vapor Deposition Based Preparation on Porous Silica Films"Jpn. J. Appl. Phys. 39. L1155-L1157 (2000)

Y.UCHIDA：“基于化学气相沉积的多孔二氧化硅薄膜的制备”Jpn。