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New Type of Nonlinear Optical Device using Charge-Density-Wave Collective Motion

New Type of Nonlinear Optical Device using Charge-Density-Wave Collective Motion
利用电荷密度波集体运动的新型非线性光学器件
批准号:
12650039
负责人:
KOYANO Mikio
金额:
$1.92万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001

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中文摘要
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英文摘要
(i) Charge density fluctuation and density modulation in ideal 2-dimensional electron systemsResonant light scattering spectra from modulation doped n-type AlGaAs/GaAs single heterojunctions are studied experimentally and theoretically. Based on the light scattering formula due to the charge-density mechanism, the scattering intensities by coupled intersubband plasmon-LO phonon modes are analyzed by taking into account the electron-electron and electron-phonon interactions. Moreover, we carry out a self-consistent calculation of the density modulation of the 2-dimensional electron gas in a lateral surface superlattice.(ii) Charge-density-waves in transition-metal dichalcogenidesSingle crystals of quasi-two-dimensional conductor of TaS_2 have been synthesized by chemical vapor transport technique. Excess sulfur addition at the synthesis suppressed the charge-density-wave transition through a conduction carrier injection; the thermopower measurements revealed that the injected carrier is hole.(iii) Photo-irradiation effect on dynamics of charge-density-wave condensate in quasi-one-dimensional conductorsWe find a new photo-irradiation effect on the current-voltage characteristics of quasi-one-dimensional conductors TaS_3. When the TaS_3 single crystal is irradiated with a weak 488 nm emission from Ar^+ laser, the electrical current is enhanced around the threshold voltage V_t below the Peierls transition temperature T_p. The current enhancement is attributed to the increase of charge-density-wave contribution due to the screened pinning potentials by photo-excited quasi-particles in plastic creep phase of charge-density-wave motion.
期刊论文(18)
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会议论文
T.Tagawa, S.Katayama: "A New Profile of the Modulated Two-dimensional Electron Density in Lateral Surface Superlattices"Journal of Korean Physical Society. 39(3). 481-484 (2001)
T.Takawa、S.Katayama:“横向表面超晶格中调制二维电子密度的新轮廓”韩国物理学会杂志。
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T.Tagawa, S.Katayama: "Plasmons in laterally Density Modulated 2D Electron Gas in Shallow Etched Single-heterostructures"Proceeding of the 25th International Conference on the Physics of Semiconductors (Osaka, 2000). 481-482 (2001)
T.Takawa、S.Katayama:“浅蚀刻单异质结构中横向密度调制二维电子气体中的等离激元”第 25 届国际半导体物理会议论文集(大阪,2000 年)。
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S. M. Maung, S. Katayama, M. Koyano and S. Yamada: "Ionic Screening Effects on Resonant Light Scattering by Intersubband Excitations in n-type AiGaAs/GaAs Heterojunctions"Proceedings of the 28th International Symposium on Compound Semiconductors (Tokyo, 2
S. M. Maung、S. Katayama、M. Koyano 和 S. Yamada:“n 型 AiGaAs/GaAs 异质结中子带间激发对共振光散射的离子屏蔽效应”第 28 届国际化合物半导体研讨会论文集(东京,2
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小矢野 幹夫: "遷移金属ダイカルコゲナイドのインターカレーションと伝導物質"金属(特集 硫化物の物性と製造プロセス). 70・7. 535-542 (2000)
Mikio Oyano:“过渡金属二硫化物的插层和导电材料”金属(硫化物的物理性质和制造工艺专题)70・7(2000)。
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