Development of novel MOCVD apparatus for the malti-component films and preparation of some functional turns

新型多组分薄膜MOCVD装置的研制及部分功能匝的制备

• 批准号: 12650827
• 负责人: SHIGERU Lto
• 金额: $ 0.7万
• 依托单位: Tokyo University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650827/
• 关键词: MOCVD; (Ni,Zn)Fe2O4; Magnetic Properties; Control of film composition; Doping; Pb(Zr,Ti)O3; ITO; Pb(Zr,Ti)O_3

For the deposition of malti-component films by MOCVD, the film composition is generally difficult to control. This is because the evaporation rate of each MO reagent is not constant during the film deposition. On the other hand, if mixed MO reagents were completely vaporized in an evaporation vessel, the composition of the vapors would be constant. In the present study, this idea was applied to MOCVD for (Ni, Zn)Fe_2O_4, (Ni, Zn, Cu)Fe_2O_4, PbTiO_3(PT), Pb(Ti, Zr)O_3(PZT), ZnO : Cu, In, and ITO (In_2O_3 : SnO_2) thin films. For the preparation of (Ni, Zn)Fe_2O_4 thin films, Fe(acac)_2, Zn(acac)_2 and Ni(acac)_2 were mixed with a composition of Ni : Zn : Fe=1.0 : 1.6 : 2.6-1.0 : 1, 6 : 10.4 and were then completely vaporized at 210℃ in the evaporation vessel. The mixed vapor reacted with oxygen to deposit on an α-A1_2O_3 substrate. The deposition conditions were ; flow rate of oxygen : 100 seem, substrate temperature : 500-700℃, deposition time : 20 min. The reproducibUity was establis … More hed on the relationship between film composition and the composition of CVD reagents. Thickness of the film was about 1.3-3.1μm. The magnetic properties of the Nio_<40>Zn_<0.60>Fe_2O_4 thin film at 25℃ were measured as 81emu/g (as deposited at 600℃) and 83emu/g (annealed at 1000℃ for 4h in air). Furthermore, (Ni, Zn, Cu)Fe_2O_4 thin films have been deposited by the use of Fe(acac)_3, Zn(acac)_2, Ni(acac)_2 and Cu(acac)_2.The magnetic properties were improved by CuO doping.The PT film with stoichiometric composition of PbTiOs was obtained, using our apparatus. For the PZT films, single phase of perovskite was obtained, but the content of zirconium was less than that in the stoichiometric one. This method was also useful for the doping. ZnO'Cu or In films and ITO thin films were respectively deposited with the reproducibility of electrical conductivities. As the result, the simple apparatus without the use of carrier gas was constructed. In addition, the reproducibility was established on the relationship between mixing ratio of raw materials and the film composition. MO reagents were efficiently deposited in this method. Less

对于通过MOCVD沉积多组分膜，膜组分通常难以控制。这是因为在膜沉积期间，每种MO试剂的蒸发速率不是恒定的。另一方面，如果混合的MO试剂在蒸发容器中完全蒸发，则蒸气的组成将是恒定的。本研究将这一思想应用于MOCVD制备（Ni，Zn）Fe_2O_4，（Ni，Zn，Cu）Fe_2O_4，PbTiO_3（PT），Pb（Ti，Zr）O_3（PZT），ZnO：Cu，In，ITO（In_2O_3：SnO_2）薄膜。在制备（Ni，Zn）Fe_2O_4薄膜时，将Fe（acac）_2、Zn（acac）_2和Ni（acac）_2按Ni：Zn：Fe=1.0：1.6：2.6-1.0：1，6：10.4的比例混合，在210℃蒸发。混合蒸汽与氧气反应，在α-Al_2O_3衬底上形成存款。沉积条件为：氧气流量100 sccm，衬底温度500-700℃，沉积时间20 min。 ...更多信息 讨论了化学气相沉积试剂组成与膜层组成的关系。薄膜厚度约为1.3-3.1μm。在<40><0.60>25℃下测得NiO_Zn_Fe_2O_4薄膜的磁性能为81 emu/g（600℃沉积）和83 emu/g（1000℃空气中退火4 h）。在此基础上，用Fe（acac）_3，Zn（acac）_2，Ni（acac）_2，Cu（acac）_2制备了（Ni，Zn，Cu）Fe_2O_4薄膜，并通过CuO掺杂改善了薄膜的磁性能，用我们的装置制备了化学计量比为PbTiO_3的PT薄膜。对于PZT薄膜，得到了单一的钙钛矿相，但锆的含量低于化学计量的。这种方法也适用于掺杂。分别制备了ZnO、Cu或In薄膜和ITO薄膜，其电导率具有重现性。结果，构建了不使用载气的简单装置。此外，根据原材料的混合比与膜组成之间的关系建立再现性。该方法能有效地沉积MO试剂。少

项目成果

S.Ito et al.: "Preparation of (Ni,Zn)Fe_2O_4 Thin Films by MOCVD using A Mixed Vapor of CVD Reagents"Proceedings of the 8th International Conference on Ferrites Satellite Conference. (印刷中).

S. Ito 等人：“使用 CVD 试剂混合蒸气通过 MOCVD 制备 (Ni,Zn)Fe_2O_4 薄膜”第八届国际铁氧体卫星会议论文集（正在出版）。

Shigeru Ito, Kenji Yamamoto and Takashi Fujii: "Preparetion of (Ni,Zn)FezO4 Thin Films by MOCVD Using A Mixed Vapor of CVD Reagents"Ferrites ; Proceedings of ICF 8. 725-727 (2001)

Shigeru Ito、Kenji Yamamoto 和 Takashi Fujii：“使用 CVD 试剂的混合蒸气通过 MOCVD 制备 (Ni,Zn)FezO4 薄膜”

Shigeru Ito, Kenji Yamamoto, Takashi Fujii: "Preparation of (Ni,Zn)Fe_2O_4 Thin Films by MOCVD Using a Mixed Vapor of CVD Reagents"Ferrites : Proceedings of ICF 8. 725-727 (2001)

Shigeru Ito、Kenji Yamamoto、Takashi Fujii：“使用 CVD 试剂的混合蒸气通过 MOCVD 制备 (Ni,Zn)Fe_2O_4 薄膜” 铁氧体：ICF 8. 725-727 (2001) 论文集

Shigeru Ito, Kenji Yamamoto, Takashi Fujii: "Preparation of (Ni,Zn)Fe_2O_4 Thin Films by MOCVD Using a Mixed Vapor of CVD Reagents"Fewites:Proceedings of the ICF8. 725-727 (2001)

Shigeru Ito、Kenji Yamamoto、Takashi Fujii：“使用 CVD 试剂混合蒸气通过 MOCVD 制备 (Ni,Zn)Fe_2O_4 薄膜”少数文章：ICF8 论文集。