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Development of novel MOCVD apparatus for the malti-component films and preparation of some functional turns

Development of novel MOCVD apparatus for the malti-component films and preparation of some functional turns
新型多组分薄膜MOCVD装置的研制及部分功能匝的制备
批准号:
12650827
负责人:
SHIGERU Lto
金额:
$0.7万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001

项目摘要

项目成果

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中文摘要
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英文摘要
For the deposition of malti-component films by MOCVD, the film composition is generally difficult to control. This is because the evaporation rate of each MO reagent is not constant during the film deposition. On the other hand, if mixed MO reagents were completely vaporized in an evaporation vessel, the composition of the vapors would be constant. In the present study, this idea was applied to MOCVD for (Ni, Zn)Fe_2O_4, (Ni, Zn, Cu)Fe_2O_4, PbTiO_3(PT), Pb(Ti, Zr)O_3(PZT), ZnO : Cu, In, and ITO (In_2O_3 : SnO_2) thin films. For the preparation of (Ni, Zn)Fe_2O_4 thin films, Fe(acac)_2, Zn(acac)_2 and Ni(acac)_2 were mixed with a composition of Ni : Zn : Fe=1.0 : 1.6 : 2.6-1.0 : 1, 6 : 10.4 and were then completely vaporized at 210℃ in the evaporation vessel. The mixed vapor reacted with oxygen to deposit on an α-A1_2O_3 substrate. The deposition conditions were ; flow rate of oxygen : 100 seem, substrate temperature : 500-700℃, deposition time : 20 min. The reproducibUity was establis … More hed on the relationship between film composition and the composition of CVD reagents. Thickness of the film was about 1.3-3.1μm. The magnetic properties of the Nio_<40>Zn_<0.60>Fe_2O_4 thin film at 25℃ were measured as 81emu/g (as deposited at 600℃) and 83emu/g (annealed at 1000℃ for 4h in air). Furthermore, (Ni, Zn, Cu)Fe_2O_4 thin films have been deposited by the use of Fe(acac)_3, Zn(acac)_2, Ni(acac)_2 and Cu(acac)_2.The magnetic properties were improved by CuO doping.The PT film with stoichiometric composition of PbTiOs was obtained, using our apparatus. For the PZT films, single phase of perovskite was obtained, but the content of zirconium was less than that in the stoichiometric one. This method was also useful for the doping. ZnO'Cu or In films and ITO thin films were respectively deposited with the reproducibility of electrical conductivities. As the result, the simple apparatus without the use of carrier gas was constructed. In addition, the reproducibility was established on the relationship between mixing ratio of raw materials and the film composition. MO reagents were efficiently deposited in this method. Less
期刊论文(4)
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会议论文
S.Ito et al.: "Preparation of (Ni,Zn)Fe_2O_4 Thin Films by MOCVD using A Mixed Vapor of CVD Reagents"Proceedings of the 8th International Conference on Ferrites Satellite Conference. (印刷中).
S. Ito 等人:“使用 CVD 试剂混合蒸气通过 MOCVD 制备 (Ni,Zn)Fe_2O_4 薄膜”第八届国际铁氧体卫星会议论文集(正在出版)。
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通讯作者:
Shigeru Ito, Kenji Yamamoto and Takashi Fujii: "Preparetion of (Ni,Zn)FezO4 Thin Films by MOCVD Using A Mixed Vapor of CVD Reagents"Ferrites ; Proceedings of ICF 8. 725-727 (2001)
Shigeru Ito、Kenji Yamamoto 和 Takashi Fujii:“使用 CVD 试剂的混合蒸气通过 MOCVD 制备 (Ni,Zn)FezO4 薄膜”
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通讯作者:
Shigeru Ito, Kenji Yamamoto, Takashi Fujii: "Preparation of (Ni,Zn)Fe_2O_4 Thin Films by MOCVD Using a Mixed Vapor of CVD Reagents"Ferrites : Proceedings of ICF 8. 725-727 (2001)
Shigeru Ito、Kenji Yamamoto、Takashi Fujii:“使用 CVD 试剂的混合蒸气通过 MOCVD 制备 (Ni,Zn)Fe_2O_4 薄膜” 铁氧体:ICF 8. 725-727 (2001) 论文集
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Shigeru Ito, Kenji Yamamoto, Takashi Fujii: "Preparation of (Ni,Zn)Fe_2O_4 Thin Films by MOCVD Using a Mixed Vapor of CVD Reagents"Fewites:Proceedings of the ICF8. 725-727 (2001)
Shigeru Ito、Kenji Yamamoto、Takashi Fujii:“使用 CVD 试剂混合蒸气通过 MOCVD 制备 (Ni,Zn)Fe_2O_4 薄膜”少数文章:ICF8 论文集。
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