Development of novel MOCVD apparatus for the malti-component films and preparation of some functional turns

在MOCVD沉积多组分薄膜时，膜的组成通常难以控制。这是因为在薄膜沉积过程中，每种MO试剂的蒸发速率不是恒定的。另一方面，如果混合MO试剂在蒸发容器中完全汽化，则蒸汽的组成将是恒定的。本研究将这一思想应用于MOCVD制备（Ni, Zn）Fe_2O_4, (Ni, Zn, Cu)Fe_2O_4, PbTiO_3(PT), Pb(Ti, Zr)O_3(PZT), ZnO: Cu， In和ITO （In_2O_3: SnO_2）薄膜。为制备（Ni, Zn）Fe_2O_4薄膜，将Fe(acac)_2、Zn(acac)_2和Ni(acac)_2以Ni: Zn: Fe=1.0: 1.6: 2.6 ~ 1.0: 1,6: 10.4的比例混合，在蒸发釜中于210℃下完全汽化。混合蒸汽与氧反应沉积在α-A1_2O_3衬底上。沉积条件为；氧气流量：100 μ m，衬底温度：500-700℃，沉积时间：20 min。进一步探讨了薄膜组成与CVD试剂组成之间的关系。膜厚约为1.3 ~ 3.1μm。在25℃下，Nio_<40>Zn_<0.60>Fe_2O_4薄膜的磁性能分别为81emu/g（600℃沉积）和83emu/g（1000℃空气退火4h）。采用Fe(acac)_3、Zn(acac)_2、Ni(acac)_2和Cu(acac)_2制备了（Ni, Zn, Cu）Fe_2O_4薄膜。CuO掺杂改善了材料的磁性能。利用该装置制备了具有PbTiOs化学计量组成的PT薄膜。对于PZT薄膜，得到了单相钙钛矿，但锆的含量比化学计量膜少。该方法也适用于掺杂。分别制备了ZnO'Cu或In薄膜和ITO薄膜，并具有电导率的再现性。因此，构建了不使用载气的简易装置。此外，还建立了原料配比与薄膜组成关系的重现性。该方法可有效沉积MO试剂。少

For the deposition of malti-component films by MOCVD, the film composition is generally difficult to control. This is because the evaporation rate of each MO reagent is not constant during the film deposition. On the other hand, if mixed MO reagents were completely vaporized in an evaporation vessel, the composition of the vapors would be constant. In the present study, this idea was applied to MOCVD for (Ni, Zn)Fe_2O_4, (Ni, Zn, Cu)Fe_2O_4, PbTiO_3(PT), Pb(Ti, Zr)O_3(PZT), ZnO : Cu, In, and ITO (In_2O_3 : SnO_2) thin films. For the preparation of (Ni, Zn)Fe_2O_4 thin films, Fe(acac)_2, Zn(acac)_2 and Ni(acac)_2 were mixed with a composition of Ni : Zn : Fe=1.0 : 1.6 : 2.6-1.0 : 1, 6 : 10.4 and were then completely vaporized at 210℃ in the evaporation vessel. The mixed vapor reacted with oxygen to deposit on an α-A1_2O_3 substrate. The deposition conditions were ; flow rate of oxygen : 100 seem, substrate temperature : 500-700℃, deposition time : 20 min. The reproducibUity was establis … More hed on the relationship between film composition and the composition of CVD reagents. Thickness of the film was about 1.3-3.1μm. The magnetic properties of the Nio_<40>Zn_<0.60>Fe_2O_4 thin film at 25℃ were measured as 81emu/g (as deposited at 600℃) and 83emu/g (annealed at 1000℃ for 4h in air). Furthermore, (Ni, Zn, Cu)Fe_2O_4 thin films have been deposited by the use of Fe(acac)_3, Zn(acac)_2, Ni(acac)_2 and Cu(acac)_2.The magnetic properties were improved by CuO doping.The PT film with stoichiometric composition of PbTiOs was obtained, using our apparatus. For the PZT films, single phase of perovskite was obtained, but the content of zirconium was less than that in the stoichiometric one. This method was also useful for the doping. ZnO'Cu or In films and ITO thin films were respectively deposited with the reproducibility of electrical conductivities. As the result, the simple apparatus without the use of carrier gas was constructed. In addition, the reproducibility was established on the relationship between mixing ratio of raw materials and the film composition. MO reagents were efficiently deposited in this method. Less