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Switching rate and power capacity improvement of semiconductor power device by effect of magnetic fields

磁场效应提高半导体功率器件的开关速率和功率容量

基本信息

批准号：
13355012
负责人：
ISHII Hozo
金额：
$ 21.55万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355012/
关键词：
semiconductor power device carrier distribution influence of magnetic fields pulsed power technology SI thyristor free carrier absorption method pin diode パワーデバイスキャリア密度分布パルス磁界キャリア密度キャリア寿命デバイスシミュレータ

项目摘要

The influence of magnetic fields on carrier behavior in power semiconductor devices was examined in order to obtain technical data required for designing devices that can switch in high-current density region with high di/dt characteristics for pulsed power applications. Free carrier absorption method using the infrared probe laser with wavelength of 1.55μm was employed to measure spatial and temporal change in carrier distribution of a pin-diode, which has a basic structure of power semiconductor devices. The probe laser beam ray was analyzed and spatial resolution of 40μm was obtained. Spatial nonuniformity of the carrier density caused by Lorentz force was successfully observed. The factor contributed to the increase of on-resistance by the magnetic field was discussed. The spatial nonuniformity of the carrier density distribution led to the decrease of the effective cross section of the current in the device. As actually utilized power device, a SI-thyristor, which attracted much attention as a possible candidate for a fast switching device in pulsed power technology, was adopted to examine the carrier behavior. The carrier in the semiconductor power devices works to remove the potential barrier and to transfer electric charges from the anode to the cathode. The amount of carrier involved in transferring the electric charge was comparatively small for the fast pulse switching, even if the current density was considerably high. In this research, the possibility of improving the turn-off characteristics and establishing high-repetition operation of the SI-thyristor was confirmed.

研究了磁场对功率半导体器件载流子行为的影响，为设计脉冲功率应用的高电流密度区高di/dt特性的器件提供了必要的技术数据。利用波长为1.55μm的红外探测激光，采用自由载流子吸收法测量了功率半导体器件基本结构的PIN二极管中载流子分布的时空变化。对探测激光光束进行了分析，获得了40μm的空间分辨率。成功地观察到了由洛伦兹力引起的载流子密度的空间不均匀。讨论了磁场引起导通电阻增大的原因。载流子密度分布的空间不均匀导致了器件中电流的有效截面减小。作为实际使用的功率器件，采用了备受关注的可控硅作为脉冲功率技术中一种可能的快速开关器件，对其载流子行为进行了研究。半导体功率器件中的载流子起到消除势垒和将电荷从阳极转移到阴极的作用。对于快速脉冲开关，即使电流密度相当高，转移电荷所涉及的载流子数量也相对较小。在本研究中，证实了改善晶闸管的关断特性和建立高重复运行的可能性。