Analysis of The Initial Growth Process of Carbon Nanotubes on The Silicon Carbide Surface and Control Their Formation by The Surface Modification

碳纳米管在碳化硅表面的初始生长过程分析及表面改性控制其形成

• 批准号: 13650028
• 负责人: NAITOH Masamichi
• 金额: $ 1.92万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650028/
• 关键词: scanning tunneling microscopy; carbon nanotubes; surface modification; silicon carbide; LASER; carbon nanocaps; self-organization; 自己組織化; 表面構造; 水素吸着

Silicon carbide (SiC) is a very promising material for applications to high-power and high-frequency devices because of its large breakdown field and high electron mobility. In addition, it is interesting that the energy band-gap of SiC is rather wide and shows different values depending on its own crystallographic structures: hexagonal, rhombohedral or cubic. A multilayer structure of the SiC polytypes could become a new material with controllable band-gaps. Moreover, it is expected to be a substrate for heteroepitaxial growth of group III nitrides. Kusunoki et al. have recently reported [Appl.Phys.Lett.77(2000)531] that carbon nanotubes (CNTs) are formed on a 6H-SiC(000-1) surface after annealing the substrate at 1700℃ in a vacuum furnace. There are polar surfaces corresponding to Si-terminated (0001) and C-terminated (000-1) surfaces for 6H-SiC. It is interesting to note that on a 6H-SiC(0001) surface they could not obtain CNTs but only several graphite layers. The initial process of CNT growth on the 6H-SiC(000-1) surface has not been elucidated yet. In the present study, we investigated the initial process of graphitization on the 6H-SiC(000-1) surface and found that graphite layers without grobal coincidence of their crystallographic orientations grew on the 6H-SiC(000-1) surface when annealed at temperatures higher than 1300℃. We also investigated to control the formation of CNTs on the SiC surface by surface modification. When the 6H-SiC(000-1) surface applied the laser followed by annealing at 1700℃, we cannot observe the CNTs on the surface. This result indicated that we can make CNT devices using an idea such as surface modification

碳化硅（SiC）具有击穿场大、电子迁移率高的特点，是一种非常有前途的高功率高频器件材料。此外，有趣的是，SiC的能带隙相当宽，并且根据其自身的晶体结构（六角形、菱形或立方）显示不同的值。多层结构的碳化硅多型材料有望成为一种带隙可控的新型材料。此外，它有望成为III族氮化物异质外延生长的衬底。Kusunoki等人最近报道了[appl.phys.leet]。77(2000)531]在真空炉中1700℃退火后，在6H-SiC（000-1）表面形成碳纳米管（CNTs）。6H-SiC的极性表面对应于si端（0001）和c端（000-1）表面。有趣的是，在6H-SiC（0001）表面，他们不能得到碳纳米管，只能得到几个石墨层。碳纳米管在6H-SiC（000-1）表面生长的初始过程尚未阐明。在本研究中，我们研究了6H-SiC（000-1）表面石墨化的初始过程，发现当温度高于1300℃时，在6H-SiC（000-1）表面生长出了晶体取向不完全一致的石墨层。我们还研究了通过表面改性来控制碳化硅表面碳纳米管的形成。对6H-SiC（000-1）表面施加激光，然后在1700℃下退火，我们无法观察到表面有CNTs。这一结果表明，我们可以利用表面修饰等思想制作碳纳米管器件

项目成果

J.Takami: "STM and LEED observation of hydrogen adsorption on the 6H-SiC(0001)3×3 surface"Surface Science. 482-485. 359-364 (2001)

J.Takami：“6H-SiC(0001)3×3 表面氢吸附的 STM 和 LEED 观察”表面科学 482-485 (2001)。

M.Naitoh: "An STM observation of the initial process of graphitization at the 6H-SiC(0001) surface"Surface Review and Letters. (印刷中).

M.Naitoh：“6H-SiC(0001) 表面石墨化初始过程的 STM 观察”《表面评论和快报》（正在出版）。

M.Naitoh.: "An STM observation of the initial process of graphitization at the 6H-SiC(000-1) surface"Surface Review and Letters. in press.

M.Naitoh.：“6H-SiC(000-1) 表面石墨化初始过程的 STM 观察”《表面评论和快报》。

J.Takami: "STM and LEED observation of hydrogen adsorption on the 6H-SiC(0001)3x3 surface"Surface Science. 482-485. 359-364 (2001)

J.Takami：“6H-SiC(0001)3x3 表面氢吸附的 STM 和 LEED 观察”表面科学。

J.Takami.: "STM and LEED observation of hydrogen adsorption on the 6H-SiC(0001)3×3 surface"Surface Science. 359-364,482-485 (2001)

J.Takami.：“6H-SiC(0001)3×3表面氢吸附的STM和LEED观察”表面科学359-364,482-485(2001)