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Preparation of Ta Solid Solution Anodized Capacitor and Evaluation of its Reliability

Ta固溶体阳极氧化电容器的制备及其可靠性评价

基本信息

批准号：
13650329
负责人：
SASAKI Katutaka
金额：
$ 2.05万
依托单位：
Kitami Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650329/
关键词：
Hf anodized film Zr anodized film Ta - Zr anodized capacitor thin film capacitor Schottky effect Poole-Frenkl conduction high permittivity high heat - proof capacitor 陽極酸化膜キャパシタ電気伝導機構低損失特性 Ta-Zr合金膜耐熱性漏れ電流特性

项目摘要

Electrical properties of anodic oxide films of Hf and Zr have not yet been investigated sufficiently, although HfO_2 and ZrO_2 films are recently attracted much attention as high -k materials in Si-LSI MOS devices. Then, we investigated fundamentally the capacitor properties and the leakage current properties of anodized capacitors of Hf and Zr films and compared with that of Ta anodized capacitor. As a result, it is revealed that the capacitor properties of both Hf and Zr anodized films are superior to that of Ta anodized film, because capacitors with low - loss properties and high permittivity are obtained, even if anodized thickness becomes very thin. In addition, we found that the electrical conduction mechanisms of Hf anodized film was due to the Schottky effect, while that of Zr anodized film was due to the Poole-Frenkel conduction. Furthermore, it is confirmed that the thermal stability of Hf anodized capacitor is superior to that of Zr anodized capacitor.Next, we examined the capacitor properties and the leakage current properties of anodized film of Ta - Zr alloy as a solid solution, from the viewpoints of reduction effect of oxide thickness and heat - proof properties. As a result, it is concluded that the low - loss capacitor with high permittivity and high heat-proof properties can be realized, using this Ta -Zr anodized capacitor, in spite of very thin oxide thickness state. We speculated that the reason of the high reliable properties may be ascribed to the alloying effect of Ta with Zr and the change of conduction mechanism from Poole-Frenkel to Schottky conduction.

虽然HfO_2和ZrO_2薄膜作为Si-LSI MOS器件的高k材料近年来引起了人们的广泛关注，但对Hf和Zr阳极氧化膜的电学性质的研究还不够深入。然后，我们对Hf和Zr膜阳极氧化电容器的电容特性和漏电流特性进行了初步的研究，并与Ta膜阳极氧化电容器进行了比较。结果表明，Hf和Zr阳极氧化膜的电容器性能均上级于Ta阳极氧化膜的电容器性能，因为即使阳极氧化厚度变得非常薄，也获得了具有低损耗性能和高介电常数的电容器。另外，我们发现Hf阳极氧化膜的导电机制是由于肖特基效应，而Zr阳极氧化膜的导电机制是由于Poole-Frenkel导电。进一步证实了Hf阳极氧化电容器的热稳定性上级Zr阳极氧化电容器。接下来，我们从氧化层厚度的减少效应和耐热性的角度，研究了Ta-Zr合金作为固溶体的阳极氧化膜的电容器性能和漏电流性能。结果表明，尽管氧化膜厚度很薄，但利用该钽锆阳极氧化电容器可以实现高介电常数、高耐热性能的低损耗电容器。我们推测，高可靠性的原因可能归因于Ta与Zr的合金化效应以及导电机制从Poole-Frenkel转变为Schottky导电。