Research on the Semi-coherent Quantum Transport Simulation for Silicon Nanodevices.

点击翻译按钮获取中文摘要

During the research in the 2001 to 2003 fiscal year, the following research results were mainly obtained.(1) The explicit solving method which used virtual time was employed for the analysis of a 1-dimensional bipolar transistor. It was demonstrated that the explicit solving method is effective for device analysis.(2) The mixing method of drift diffusion and Monte Carlo method was developed for nanoscale semiconductor devices as the simulation technique.(3) The Monte Carlo simulation method using the Bohm's quantum potential and Nelson's stochastic differential equation was developed. It succeeded in the analysis of a 1-dimensional double barrier resonance tunnel diode.(4) Nanoscale 4-terminal FinFETs (XMOS) was successfully fabricated. Realization of Vth control was demonstrated from measurement of the electrical characteristics.(5) The double charge sheet model for XMOS (the so-called double gate MOSFETs) with 4-terminal operations was proposed as the device model. The core portion of the compact model considering velocity saturation phenomenon was successfully developed. The validity of the compact model was confirmed in comparison to device simulation results.