Research on the Semi-coherent Quantum Transport Simulation for Silicon Nanodevices.

硅纳米器件半相干量子输运模拟研究。

• 批准号: 13650387
• 负责人: TOMIZAWA Kazutaka
• 金额: $ 1.86万
• 依托单位: Meiji University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650387/
• 关键词: Device Simulation; Silicon Nanodevices; Double-Gate MOSFETs; Quantum Effect; Drift Diffusion Model; Balance Equations; Monte Calro Method; Compact Modeling; デバイスシュミレーション; 量子輸送; 準コヒーレント状態; 極微細シリコンデバイス

During the research in the 2001 to 2003 fiscal year, the following research results were mainly obtained.(1) The explicit solving method which used virtual time was employed for the analysis of a 1-dimensional bipolar transistor. It was demonstrated that the explicit solving method is effective for device analysis.(2) The mixing method of drift diffusion and Monte Carlo method was developed for nanoscale semiconductor devices as the simulation technique.(3) The Monte Carlo simulation method using the Bohm's quantum potential and Nelson's stochastic differential equation was developed. It succeeded in the analysis of a 1-dimensional double barrier resonance tunnel diode.(4) Nanoscale 4-terminal FinFETs (XMOS) was successfully fabricated. Realization of Vth control was demonstrated from measurement of the electrical characteristics.(5) The double charge sheet model for XMOS (the so-called double gate MOSFETs) with 4-terminal operations was proposed as the device model. The core portion of the compact model considering velocity saturation phenomenon was successfully developed. The validity of the compact model was confirmed in comparison to device simulation results.

在2001-2003财年的研究中，主要取得了以下研究成果：(1)采用虚拟时间的显式求解方法对一维双极晶体管进行了分析。(2)发展了漂移扩散和蒙特卡罗混合方法作为纳米级半导体器件的模拟技术。(3)发展了基于Bohm量子势和Nelson随机微分方程的蒙特卡罗模拟方法。成功地对一维双势垒共振隧道二极管进行了分析。(4)成功地制作了纳米级四端FinFET(XMOS)。通过对器件电学特性的测量，验证了Vth控制的实现。(5)提出了四端工作的XMOS(双栅MOSFET)的双电荷片模型。成功开发了考虑速度饱和现象的紧凑模型的核心部分。通过与器件模拟结果的比较，验证了紧凑模型的有效性。

项目成果

T.Tsutsumi, K.Ishii, H.Hiroshima, S.Kanemaru, E.Suzuki, K.Tomizawa: "Electrical and Geometrical Properties of a Si Quantum Nanowire Device Fabricated by an Inorganic EB Resist Process"Proceedings of the 2001 International Micrprocesses and Nanotechnology

T.Tsutsumi、K.Ishii、H.Hiroshima、S.Kanemaru、E.Suzuki、K.Tomizawa：“无机 EB 抗蚀工艺制造的硅量子纳米线器件的电学和几何特性”2001 年国际微工艺和技术会议论文集

M.Abe, S.Madhavi, Y.Shimada, K.Hirakawa, K.Tomizawa: "Transient velocity of electrons in GaAs investigated by time-domain THz spectroscopy"Proceedings of the International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12). (2001)

M.Abe、S.Madhavi、Y.Shimada、K.Hirakawa、K.Tomizawa：“通过时域太赫兹光谱研究 GaAs 中电子的瞬态速度”半导体非平衡载流子动力学国际会议论文集 (HCIS-12)

Y.X.Liu, K.Ishii, T.Tsusumi, M.Masahara, T.Sekigawa, K.Sakamoto, H.Takashima, E.Suzuki: "Electrical Property of Ideal Rectangular Si-Fin Channel Double-Gate MOSFETS"Abstracts of 2003 Silicon Nanoelectronics Workshop.. 64-65 (2003)

Y.X.Liu、K.Ishii、T.Tsusumi、M.Masahara、T.Sekikawa、K.Sakamoto、H.Takashima、E.Suzuki：“理想矩形 Si-Fin 通道双栅极 MOSFET 的电气特性”2003 年硅摘要

Hanpei Koike, Tadashi Nakagawa, Toshihiro Sekigawa, Toshiyuki Tsutsumi, Masakazu Hioki, Takashi Kawanami, Eiichi Suzuki: "XMOS Compact Modeing and its Important Role in Vertically Integrated Novel Device Reseach"The Proceedings of ASP-DAC 2004 (Asia and S

Hanpei Koike、Tadashi Nakakawa、Toshihiro Sekikawa、Toshiyuki Tsutsumi、Masakazu Hioki、Takashi Kawanami、Eiichi Suzuki：“XMOS 紧凑模式及其在垂直集成新型器件研究中的重要作用”ASP-DAC 2004 论文集（亚洲和南美）

柳永員, 昌原明植, 石井賢一, 堤利幸, 関川敏弘, 高嶋秀則, 山内洋美, 鈴木英一, (Y.X.Liu, M.Masahara, K.Ishii, T.Tsutsumi, T.Sekigawa, H.Takashima, H.Yamauchi, E.Suzuki): "しきい値電圧制御可能な4端子FinFETの作製と電気特性(Fabrication of Threshold Voltage Controllable 4-Terminal FinFETs and Their Electrical Ch

Nagai Yanagi、Akio Shohara、Kenichi Ishii、Toshiyuki Tsutsumi、Toshihiro Sekikawa、Hidenori Takashima、Hiromi Yamauchi、Eiichi Suzuki、（Y.X.Liu、M.Masahara、K.Ishii、T.Tsutsumi、T.Sekikawa、H.Takashima、H. Yamauchi、E.Suzuki）：“阈值电压可控 4 端子 FinFET 及其电气通道的制造”