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Development of ultra-precision processing technology of novel semiconductor substrate applied to devices with nano-structure

应用于纳米结构器件的新型半导体衬底超精密加工技术开发

基本信息

批准号：
14205026
负责人：
WATANABE Junji
金额：
$ 32.12万
依托单位：
Kumamoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205026/
关键词：
Polishing machine with UV rays TiO_2 photocatalyst Quartz plate GaAs semiconductor Silicon carbide single crystal Diamond single crystal X-ray photo spectroscopy Surface roughness TiO_2固体光触媒紫外光線 SiC単結晶酸化膜研磨加工分子動力学シミュレーション F

项目摘要

The research target in this project is to develop the ultra-precision machining technology of novel semiconductor substrates, such as GaAs, silicon carbide and diamond single crystal, applied to future devices with nano-structure. The basic concept of the technology is application of solid catalysis and ultra-violet rays in polishing technology. The results obtained are as follows.(1)Ultra-precision polishing of GaAs substrateUltra-violet rays was irradiated on the GaAs wafer on which TiO_2 photocatalyst powder was dispersed for ten minutes. It is found that oxide film composed from Ga_2O_3 and As_2O_3 was detected by evaluation method of XPS. It is possible to polish GaAs by means of removing the oxide film with safety and high quality. On the other hand, hydroxyl-radical generated from H_2O_2 is also available for GaAs polishing.(2)Ultra-precision polishing of silicon carbide substrateSilicon terminated surface of SiC single crystal is polished with Cr_2O_3-grinding wheel to high quality and high efficiency. The stock removal rate of it achieves to 3 micrometer per hour and the surface roughness polished is below Ra 0.3nm. It was found that there is no sub-surface damage from the evaluation by CAICISS method.It was found that SiC single crystal can be polished with quartz disk under ultra-violet rays irradiation. The polishing mechanism of this based on photochemical reaction of SiC semiconductor.(3)Ultra-precision polishing of diamond single crystalThe (100) surface of diamond single crystal can be polished with quartz disk under ultra-violet rays irradiation. The stock removal rate is achieved to 2 micrometers per hour under the condition of polishing pressure of 70 MPa. The surface roughness of the surface polished is below Ra 0.5nm.

本项目的研究目标是开发应用于未来纳米结构器件的新型半导体衬底（如GaAs、碳化硅和金刚石单晶）的超精密加工技术。该技术的基本思想是将固体催化和紫外光应用于抛光技术。所得结果如下。（1）GaAs基片的超精密抛光将分散有TiO_2光催化剂粉末的GaAs基片用紫外光照射10分钟。XPS分析结果表明，氧化膜由Ga_2O_3和As_2O_3组成。用去除氧化膜的方法可以安全、高质量地抛光GaAs。H_2O_2产生的羟基自由基也可用于GaAs抛光。（2）碳化硅基片的超精密抛光采用Cr_2O_3砂轮对SiC单晶的硅端面进行了高质量、高效率的抛光。其切削速度达到3 μ m/h，抛光表面粗糙度小于Ra 0.3nm。CAICISS法的评价结果表明，SiC单晶表面没有亚表面损伤，紫外光照射下可以用石英圆片对SiC单晶进行抛光。该抛光机理基于SiC半导体的光化学反应。（3）金刚石单晶的超精密抛光金刚石单晶的（100）面可用石英圆片在紫外光照射下进行抛光。在抛光压力为70 MPa的条件下，抛光速率达到2 μ m/h。抛光后的表面粗糙度小于Ra 0.5nm。

项目成果

期刊论文数量（46）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Infrared study on graded lattice quality in thin GaN crystals grown on sapphire

蓝宝石上生长的薄 GaN 晶体的分级晶格质量的红外研究

DOI：
发表时间：
2006
期刊：
Japanese Journal of Applied Physics 45・No. 2A
影响因子：
0
作者：
Y.Kumagai;T.Himoto;H.Tampo;H.Yokoi;H.Shibata;S.Niki;N.Kuroda;Noritaka Kuroda
通讯作者：
Noritaka Kuroda

GaAs基板の光触媒研磨技術の検討

GaAs衬底光催化抛光技术研究