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Development of ultra-precision processing technology of novel semiconductor substrate applied to devices with nano-structure

应用于纳米结构器件的新型半导体衬底超精密加工技术开发

基本信息

批准号：
14205026
负责人：
WATANABE Junji
金额：
$ 32.12万
依托单位：
Kumamoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205026/
关键词：
Polishing machine with UV rays TiO_2 photocatalyst Quartz plate GaAs semiconductor Silicon carbide single crystal Diamond single crystal X-ray photo spectroscopy Surface roughness TiO_2固体光触媒紫外光線 SiC単結晶酸化膜研磨加工分子動力学シミュレーション F

项目摘要

The research target in this project is to develop the ultra-precision machining technology of novel semiconductor substrates, such as GaAs, silicon carbide and diamond single crystal, applied to future devices with nano-structure. The basic concept of the technology is application of solid catalysis and ultra-violet rays in polishing technology. The results obtained are as follows.(1)Ultra-precision polishing of GaAs substrateUltra-violet rays was irradiated on the GaAs wafer on which TiO_2 photocatalyst powder was dispersed for ten minutes. It is found that oxide film composed from Ga_2O_3 and As_2O_3 was detected by evaluation method of XPS. It is possible to polish GaAs by means of removing the oxide film with safety and high quality. On the other hand, hydroxyl-radical generated from H_2O_2 is also available for GaAs polishing.(2)Ultra-precision polishing of silicon carbide substrateSilicon terminated surface of SiC single crystal is polished with Cr_2O_3-grinding wheel to high quality and high efficiency. The stock removal rate of it achieves to 3 micrometer per hour and the surface roughness polished is below Ra 0.3nm. It was found that there is no sub-surface damage from the evaluation by CAICISS method.It was found that SiC single crystal can be polished with quartz disk under ultra-violet rays irradiation. The polishing mechanism of this based on photochemical reaction of SiC semiconductor.(3)Ultra-precision polishing of diamond single crystalThe (100) surface of diamond single crystal can be polished with quartz disk under ultra-violet rays irradiation. The stock removal rate is achieved to 2 micrometers per hour under the condition of polishing pressure of 70 MPa. The surface roughness of the surface polished is below Ra 0.5nm.

本项目的研究目标是开发应用于未来纳米结构器件的新型半导体衬底的超精密加工技术，如砷化镓、碳化硅和金刚石单晶。该技术的基本概念是固体催化和紫外线在抛光技术中的应用。(1)用紫外光对分散了二氧化钛光催化剂粉末的砷化镓晶片进行了10分钟的超精密抛光。X射线光电子能谱(XPS)分析表明，薄膜中存在由Ga2O3和As2O3组成的氧化膜。通过去除氧化膜，可以安全、高质量地抛光砷化镓。(2)碳化硅衬底的超精密抛光用三氧化二铬砂轮抛光碳化硅单晶的硅端面，达到高质量、高效率的目的。加工速度可达每小时3微米，抛光后的表面粗糙度小于Ra 0.3 nm。用CAICISS方法对碳化硅单晶进行了表面下的损伤分析，发现在紫外光照射下，石英片可以抛光碳化硅单晶。基于碳化硅半导体光化学反应的抛光机理。(3)金刚石单晶的超精密抛光在紫外光照射下，用石英片对金刚石单晶的(100)面进行抛光。在抛光压力为70 Mpa的条件下，磨料去除速度可达2微米/小时。抛光后的表面粗糙度小于Ra 0.5 nm。

项目成果

期刊论文数量（46）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Infrared study on graded lattice quality in thin GaN crystals grown on sapphire

蓝宝石上生长的薄 GaN 晶体的分级晶格质量的红外研究

DOI：
发表时间：
2006
期刊：
Japanese Journal of Applied Physics 45・No. 2A
影响因子：
0
作者：
Y.Kumagai;T.Himoto;H.Tampo;H.Yokoi;H.Shibata;S.Niki;N.Kuroda;Noritaka Kuroda
通讯作者：
Noritaka Kuroda

GaAs基板の光触媒研磨技術の検討

GaAs衬底光催化抛光技术研究