Development of Novel Sputter System using Capacitively Coupled Neutral Loop Discharge Plasma Production Technology

采用电容耦合中性环路放电等离子体生产技术开发新型溅射系统

• 批准号: 14550269
• 负责人: HONDA Chikahisa
• 金额: $ 2.43万
• 依托单位: University of Miyazaki
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550269/
• 关键词: Neutral Loop Discharge (NLD); Magnetic Null Field; Process Plasma; Sputtering; Capacitively Coupled NLD; Plasma Localization; Plasma Dynamic Control; Electron Heating; NLDプラズマ; 容量結合型プラズマ

In this work, a new NLD plasma production technology for sputter application has been proposed. The results are summarized as follow.1)Investigations on the degree of localization of NLD plasma produced under various conditions of the magnetic field, RF electric field, frequency and NL radius have been performed. From results, it was found that the plasma localization increased with F_0, which can be used to characterize the localization degree of the plasma production region. Considering the relation between F_0 and plasma localization, in-depth plasma control can be achieved at a given specific chamber size.2)The electron behavior was investigated on experiment and simulation platforms. The results were in agreement with the existing inductively coupled type NLD. On the calculation platform, the electron motion around capacitive type magnetic null region exhibited the characteristic meandering motion. The same type of electron heating can be expected to occur in this new type plasma.From the experimental results that the electron density and ion current density possessing peaks at the null region, it was ascertained that the electron heating around null region is also essential for plasma production in this capacitive type null field configuration.From the thin film experiments, it could be found that the thickness uniformity was well enhanced with the substrate rotation and dynamical plasma control although further detail work is necessary to establish this. Furthermore, it is expected that the dynamic control of plasma over the target surface will be realized, because rotating and arranging the outer permanent magnets can actively control the position and area of magnetic null field region. With plasma application, the enhancement of target erosion and its uniformity are possible.

本文提出了一种新的用于溅射的NLD等离子体生产技术。结果总结如下：1)研究了不同磁场、射频电场、频率和NLD半径条件下产生的NLD等离子体的局域化程度。结果表明，等离子体的局部化程度随着F_0的增大而增大，可以用来表征等离子体产生区的局部化程度。考虑到F_0与等离子体定位之间的关系，在给定的特定腔室尺寸下可以实现等离子体的深度控制。2)在实验和仿真平台上研究了电子行为。所得结果与现有的电感耦合型NLD基本一致。在计算平台上，电子绕电容式磁零区运动表现出弯曲运动的特征。在这种新型等离子体中可以预期发生相同类型的电子加热。从实验结果来看，电子密度和离子电流密度在零区有峰值，确定了在这种电容型零场结构中，零区周围的电子加热对等离子体的产生也是必不可少的。从薄膜实验中可以发现，衬底旋转和动态等离子体控制可以很好地提高厚度均匀性，但还需要进一步的细节工作来证实这一点。此外，由于旋转和排列外永磁体可以主动控制磁场零区位置和面积，因此有望实现等离子体对目标表面的动态控制。等离子体应用可以增强靶蚀和靶蚀均匀性。

项目成果

Y.M.Sung, M.Otsubo, C.Honda: "Studies of a magnetic null discharge for sputtering application"Surface & Coatings Technology. 171. 178-182 (2003)

Y.M.Sung、M.Otsubo、C.Honda：“溅射应用的磁零放电研究”表面

S.Atsuta, Y.M.Sung, M.Otsubo, C.Honda: "A Novel Sputter System with Full Target Erosion"Proc.2003 Japan-Korea Joint Symposium on Electrical Discharge and High Voltage Engineering (Nagasaki). 337-340 (2003)

S.Atsuta、Y.M.Sung、M.Otsubo、C.Honda：“一种具有全靶腐蚀的新型溅射系统”Proc.2003 日本-韩国放电和高电压工程联合研讨会（长崎）。

S.Atsuta, Y.M.Sung, M.Otsubo, C.Honda: "Magnetic null discharge sputtering with full target erosion"Proc.4th Asian-European International Conference on Plasma Surface Engineering (Korea). 98-98 (2003)

S.Atsuta、Y.M.Sung、M.Otsubo、C.Honda：“磁零放电溅射与全靶腐蚀”Proc.第四届亚欧国际等离子体表面工程会议（韩国）。

Y.M.Sung, S.Atsuta, M.Otsubo, C.Honda: "A Sputtering Type Neutral Loop Discharge Plasma"Proc.2003 IEEE International Conference on Plasma Science (Korea). 431 (2003)

Y.M.Sung、S.Atsuta、M.Otsubo、C.Honda：“溅射型中性环路放电等离子体”Proc.2003 IEEE 国际等离子体科学会议（韩国）。

Y.M.Sung, M.Otsubo, C.Honda: "Plasma Dynamic Control of a Neutral Loop Discharge for Sputtering Application"Proc. Joint International Plasma Symposium of 6^<th> APCPST, 15^<th> SPSM, OS 2002 & 11^<th> KAPRA (Korea). 151 (2002)

Y.M.Sung、M.Otsubo、C.Honda：“用于溅射应用的中性环路放电的等离子体动态控制”Proc。