J-aggregation formation of dye ultra thin films and sophisticated nano febrication using applied voltage Langmuir-Blodgett method
使用施加电压 Langmuir-Blodgett 方法形成染料超薄膜的 J 聚集和复杂的纳米纤维化
基本信息
- 批准号:14550291
- 负责人:
- 金额:$ 1.34万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
1.2002,Fabrication of applied voltage LB troughApplied voltage LB trough was fabricated. The distance between water surface and counter electrode was one to five mm, applied voltage was -2500 to +2500 V, the maximum electric field was 25 kV/cm. The action force to molecule in L film by the electric field was larger than that by surface tension, so the orientation of molecule in L film and LB films was able to be controlled.2.2003,Applied voltage polarity and subphase conditionOptimization of the applied voltage polarity, L film leaving time after applied voltage and pH of subphase, the orientation of LB films and the ratio of transferred L film to LB films.3.2004,Molecular orientation of L film and LB filmsWe clarified that the limiting molecular area in L film was controlled, when applied voltage between the water surface and the counter electrode after spread molecular on the water surface. We clarified that the layer-to-layer spacing in applied voltage LB films was shorter than that in non applied voltage LB films using X-ray diffraction. We clarified that the molecular density in applied voltage LB films decreased using ultraviolet visible absorption spectrum. We clarified that the selective molecules in the parallel of LB films were deposited, and the orientation of molecule was controlled.
1.2002,外加电压LB槽的制作了外加电压LB槽。电极与水面的距离为1 ~ 5 mm,外加电压为-2500 ~+2500V,最大电场为25 kV/cm。电场对L膜中分子的作用力大于表面张力对L膜中分子的作用力,从而可以控制L膜和LB膜中分子的取向。2.2003、施加电压的极性和亚相条件优化了施加电压的极性、施加电压后L膜的放置时间和亚相的pH值,LB膜的取向和转移的L膜与LB膜的比率。3.2004,L膜和LB膜的分子取向我们阐明了L膜中的限制分子区域是受控的,当在水面上扩散分子后,在水面和对电极之间施加电压时,我们澄清了层间间距在施加电压LB膜短于在非施加电压LB膜使用X射线衍射。利用紫外-可见吸收光谱,阐明了外加电压下LB膜中分子密度的降低。阐明了选择性分子在平行LB膜中沉积,并控制了分子的取向。
项目成果
期刊论文数量(34)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A Surface-Silylated Single-Layer Resist UsingO Chemical Amplification for Deep UV Lithography : IIIb. Optimization of PAG and Its Content
使用化学放大进行深紫外光刻的表面硅烷化单层抗蚀剂:IIIb。
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Kazuyuki Sugita
- 通讯作者:Kazuyuki Sugita
串田正人: "Au/C12TCNQとBEDT-TTFの混合LB膜/Alからのエネルギー放出"2004年電気学会全国大会. 第2分冊. 113 (2004)
Masato Kushida:“Au/C12TCNQ 和 BEDT-TTF 的混合 LB 薄膜/Al 的能量释放”2004 年日本电气工程师学会全国会议第 2. 113 卷(2004 年)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep UV Lithography : IIIb. Optimization of PAG and Its Content
使用化学放大进行深紫外光刻的表面硅烷化单层抗蚀剂:IIIb。
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Koji Hino;Masahito Kushida;串田正人;日野浩二;Kazuyuki Sugita;Kazuyuki Sugita
- 通讯作者:Kazuyuki Sugita
Control of Photo and Thermal Decomposition of Diazo/PVA Resist with inclusion Compounds
包合物控制重氮/PVA抗蚀剂的光分解和热分解
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Keiko Harada
- 通讯作者:Keiko Harada
A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep UV Lithography : IIIa. Preliminary Results of Optimization of PAG and Its Content
使用化学放大进行深紫外光刻的表面硅烷化单层抗蚀剂:IIIa。
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Kazuyuki Sugita
- 通讯作者:Kazuyuki Sugita
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KUSHIDA Masahito其他文献
KUSHIDA Masahito的其他文献
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{{ truncateString('KUSHIDA Masahito', 18)}}的其他基金
Preparation of no amphiphilic monolayer and orientation control of metal catalyst nanoparticles
无两亲性单分子层的制备及金属催化剂纳米颗粒的取向控制
- 批准号:
24656199 - 财政年份:2012
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research














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