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Preparation of oxide semiconductor films via solution deposition method and investigation on the interfaces inside the films

溶液沉积法制备氧化物半导体薄膜及薄膜内部界面研究

基本信息

批准号：
14550665
负责人：
OHYA Yutaka
金额：
$ 2.3万
依托单位：
Gifu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

项目摘要

Zinc oxide films were fabricated using a sol, which was prepared from zinc acetate with additions of diethanolamine, and co-addition of monoethanolamine and acetoin. The prepared sol was 0.5 mol/L concentration. The co-added amounts of monoethanolamine and acetoin were equimolar and a half molar to zinc, respectively. The substrates used were heat resistant glass and silicon wafer with oxide layer of 130 nm thick. A non-ionic surfactant was used for coating on silicon wafer. Deposited films by a dip-coating procedure were heated at 600 to 900 to form oxide films. In order to investigate the thin film transistor, zirconia thin film was also deposited between the silicon wafer and zinc oxide layer.By rapid heat treatment, zinc oxide films were oriented with c-axis perpendicular to the substrate surface. The electrical resistivity of the films heated at 500-600℃ ranged 1 to 5 Ωcm, and became larger when heated higher temperature. The film of the lowest resistivity, had a carrier density of 10^<16> cm^3 and a mobility of 1-5 cm^2/Vs. The measurement of electrical conductivity of this film deposited on SiO_2/Si wafer revealed a considerable amount of leakage current through the insulating SiO_2 layer. This leakage was attributed to defects of the SiO2 layer. In order to passivate the SiO_2 layer, cover deposition with Ta_2O_5 or ZrO_2 was examined. The ZrO_2 film with smooth surface was obtained and the film prevented the leakage through the insulating layer. Thus manufactured multilayered film, ZnO/ZrO_2/SiO_2/Si, exhibited an excellent feature as a thin film transistor.

以醋酸锌、二乙醇胺、一乙醇胺和乙酸乙酯为原料制备了氧化锌薄膜。制备的溶胶为0.5mol/L浓度。乙醇胺和乙酸乙酯与锌的共加量分别为等摩尔量和半摩尔量。所使用的衬底为耐热玻璃和硅片，氧化层厚度为130 nm。采用非离子表面活性剂对硅片进行表面涂覆。通过浸渍镀膜法沉积的薄膜在600-900℃加热以形成氧化膜。为了研究薄膜晶体管，还在硅片和氧化锌层之间沉积了氧化锆薄膜，通过快速热处理，氧化锌薄膜沿c轴垂直于衬底表面取向。在5 0 0~6 0 0℃加热时，薄膜的电阻率为1~5Ωcm，且随着加热温度的升高，薄膜的电阻率变大。电阻率最低的薄膜，载流子密度为10~16 cm^3，迁移率为1~5 cm^2/vs。在SiO_2/Si衬底上沉积的薄膜的电导率测量表明，有相当大的泄漏电流流过绝缘的SiO_2层。这种泄漏是由于SiO_2层的缺陷造成的。为了钝化SiO_2层，研究了Ta_2O_5和ZrO_2的覆盖沉积。得到了表面光滑的氧化锆薄膜，防止了绝缘层的漏电。用这种方法制备的多层膜，即ZnO/ZrO2/SiO_2/Si，具有良好的薄膜晶体管特性。