Development of a high-sensitivity, high-resolution hydrogen detection technique and its application to hydrogen impurities in semiconductors

高灵敏度、高分辨率氢检测技术的开发及其在半导体中氢杂质的检测中的应用

基本信息

  • 批准号:
    15310083
  • 负责人:
  • 金额:
    $ 8.38万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2003
  • 资助国家:
    日本
  • 起止时间:
    2003 至 2005
  • 项目状态:
    已结题

项目摘要

The project has thoroughly explored the viability of applying the 2^<nd> energy resonance of the ^1H(^<15>N, αγ)^<12>C reaction at 13.35 MeV for hydrogen depth profiling, aiming to achieve a sensitivity enhancement for the determination of low hydrogen concentrations in bulk samples by ^<15>N nuclear reaction analysis.By acquisition of excitation curves of the nuclear reaction the 6.385 MeV and 13.35 MeV from the same thin film specimen of 〜40 nm hydrogenated SiN on H-free crystalline Si(100) the investigation has experimentally verified that the integral reaction cross-sections at the broader 13.35 MeV resonance is (8.7±0.2) times as large as that of the more commonly applied sharper resonance at 6.385 MeV. Combined with the 〜10 % reduced stopping power for ^<15>N at the higher resonance energy, this gain of resonant γ-yield corresponds to a sensitivity improvement for the measurement of bulk H concentrations by a factor of 10.In order to enable the evaluation of sensitivity restricti … More ons imposed by non-resonant reaction yield from hydrogen in surface layers, the off-resonance cross section of the ^1H(^<15>N, αγ)^<12>C reaction in the entire energy range from 6-16 MeV was determined quantitatively. This information is indispensable to estimate the maximum surface hydrogen contamination levels that are tolerable in a given analytical task defined by the stopping power of the target material and the required probing depth. Practical recommendations to overcome possible limitations due to surface contamination have been devised.The study further revealed that background corrections of the γ-detector output are essential at ^<15>N ion energies exceeding 〜8 MeV due to emission of non-specific continuous γ-radiation. This effect has barely been pointed out in the respective literature so far. In addition the project has lead to the development of a versatile software package capable of simulating experimental NRA yield curves, which proved to be invaluable for the establishment of the off-resonant reaction cross section by enabling the distinction of resonant and non-resonant reaction yield. It furthermore significantly helps interpreting experimental NRA yield curves in terms of the underlying hydrogen depth profile. The developed methods of analysis are universal and considered to be applicable to a large number of NRA investigations benefiting from the enhanced sensitivity of the 13.35 MeV resonance. Quantitative analysis of surface hydrogen using a unique form of zero-point vibrational spectroscopy by NRA has also been achieved. Less
为了提高<nd>^1H(^<15>N,αγ)^<12>C反应的灵敏度,利用13.35MeV的2^能量共振进行氢深度分析,通过对13.35MeV<15>和13.35MeV的激发曲线的测量,获得了13.35MeV和13.35MeV的能量共振值,并对13.35MeV和13.35MeV的能量共振值进行了比较。实验证实,13.35MeV宽共振下的积分反应截面是6.385MeV窄共振下积分反应截面的(8.7±0.2)倍。结合在较高共振能量下^ N的阻止本领降低10%<15>,共振γ产额的这一增益对应于体H浓度测量的灵敏度提高10倍。 ...更多信息 在表面层中氢的非共振反应产额的作用下,定量地测定了6-16 MeV能量范围内^1H(^<15>N,αγ)^<12>C反应的非共振截面.该信息对于估计在给定分析任务中可容忍的最大表面氢污染水平是必不可少的,该分析任务由靶材料的阻止能力和所需的探测深度定义。研究进一步揭示了在^<15>N离子能量超过108 MeV时,由于非特异性连续γ辐射的发射,γ探测器输出的背景校正是必不可少的。迄今为止,在相关文献中几乎没有指出这种影响。此外,该项目还开发了一个能够模拟实验NRA产率曲线的通用软件包,该软件包通过区分共振和非共振反应产率,被证明对于建立非共振反应截面非常宝贵。此外,它显着有助于解释实验NRA屈服曲线的基础氢深度剖面。所开发的分析方法是通用的,被认为是适用于大量的NRA调查受益于增强的灵敏度的13.35兆电子伏的共振。还实现了使用NRA的零点振动光谱的独特形式的表面氢的定量分析。少

项目成果

期刊论文数量(17)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1-x)Ge(x) surfaces
HF蚀刻Si(1-x)Ge(x)表面氢钝化层的定量覆盖和稳定性
Reactivity of gold thin films grown on iridium: Hydrogen dissociation
  • DOI:
    10.1016/j.apcata.2005.02.040
  • 发表时间:
    2005-09
  • 期刊:
  • 影响因子:
    5.5
  • 作者:
    M. Okada;S. Ogura;W. Diño;M. Wilde;K. Fukutani;T. Kasai
  • 通讯作者:
    M. Okada;S. Ogura;W. Diño;M. Wilde;K. Fukutani;T. Kasai
Evaluation of non-resonant background in hydrogen depth profiling via 1H(15N.ag) 12C nuclear reaction analysis near 13.35 MeV
通过 13.35 MeV 附近的 1H(15N.ag) 12C 核反应分析评估氢深度剖析中的非共振背景
M.Wilde, K.Fukutani: "Low-temperature growth of Au on H-terminated Si(111)"Jpn.J.Appl.Phys.42 (2003) 4650. 42. 4650-4653 (2003)
M.Wilde、K.Fukutani:“Au 在 H 端接的 Si(111) 上的低温生长”Jpn.J.Appl.Phys.42 (2003) 4650. 42. 4650-4653 (2003)
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Reactive gold thin films grown on iridium
在铱上生长的活性金薄膜
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    M.Okada;S.Ogura;W.A.Dino;M.Wilde;K.Fukutani;T.Kasai
  • 通讯作者:
    T.Kasai
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WILDE Markus其他文献

WILDE Markus的其他文献

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{{ truncateString('WILDE Markus', 18)}}的其他基金

Cr_2O_3(0001)薄膜表面の構造と水素の吸着・拡散
Cr_2O_3(0001)薄膜表面结构与氢吸附/扩散
  • 批准号:
    13750027
  • 财政年份:
    2001
  • 资助金额:
    $ 8.38万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
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