Study of self assembled monolayer field effect transistors using the shadow mask evaporation technique

采用基于电子束光刻的空气桥结构荫罩蒸发技术制备了纳米级Au/4，4 '-二（乙基苯基）-5'-硝基-1-硫代乙酰苯自组装单层膜（nitro-OPE SAM）/Au结。29个Au/nitro-OPE SAM/Au器件在324个器件内工作。在电流-电压特性中观察到负微分电导（NDC），在电流-时间特性中观察到电导开关.我们还报道了单硝基-OPE分子在烷醇单分子自组装质谱中的电导开关现象。

Nanometer scale Au/4,4'-di(ethylphenyl)-5'-nitro-1-thioacetylbenzene self-assembled monolayer (nitro-OPE SAM) /Au junctions have been fabricated by using the shadow mask evaporation technique with an air-bridge structure based on EB lithography. 29 Au/nitro-OPE SAM/Au devices work within 324 devices. Negative differential conductance (NDC) in current - voltage characteristics and conductance switching in current - time characteristics have been observed. We also report conductance switching of single nitro-OPE molecule in alkanethiol SAMS by using sequential images by scanning tunneling microscopy.